Document Number: 93177 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 14-May-08 1
Fast Recovery Diodes
(Hockey PUK Version), 560 A
SD553C..S50L Series
Vishay High Power Products
FEATURES
• High power FAST recovery diode series
• 6.0 µs recovery time
• High voltage ratings up to 4500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC DO-200AB (B-PUK)
• Maximum junction temperature 125 °C
• Lead (Pb)-free
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IF(AV) 560 A
DO-200AB (B-PUK)
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IF(AV)
560 A
Ths 55 °C
IF(RMS)
1120 A
Ths 25 °C
IFSM
50 Hz 12 000 A
60 Hz 12 570
I2t50 Hz 721 kA2s
60 Hz 658
VRRM Range 3000 to 4500 V
trr
6.0 µs
TJ125 °C
TJ- 40 to 125
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = 125 °C
mA
SD553C..S50L
30 3000 3100
75
36 3600 3700
40 4000 4100
45 4500 4600
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93177
2Revision: 14-May-08
SD553C..S50L Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 560 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at heatsink temperature IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
560 (210) A
55 (85) °C
Maximum RMS forward current IF(RMS) 25 °C heatsink temperature double side cooled 1120
A
Maximum peak, one-cycle forward,
non-repetitive surge current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
12 000
t = 8.3 ms 12 570
t = 10 ms 50 % VRRM
reapplied
10 100
t = 8.3 ms 10 570
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
721
kA2s
t = 8.3 ms 658
t = 10 ms 50 % VRRM
reapplied
510
t = 8.3 ms 466
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 7210 kA2√s
Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.77 V
High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.95
Low level value of forward
slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.98
mΩ
High level value of forward
slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.89
Maximum forward voltage drop VFM Ipk = 1500 A, TJ =125 °C, tp = 10 ms sinusoidal wave 3.24 V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C TEST CONDITIONS TYPICAL VALUES
AT TJ = 125 °C
trr AT 25 % IRRM
(µs)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/µs)
Vr
(V)
trr AT 25 % IRRM
(µs)
Qrr
(µC)
Irr
(A)
S50 5.0 1000 100 - 50 6.0 900 250
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range TJ- 40 to 125 °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance,
junction to heatsink RthJ-hs
DC operation single side cooled 0.073 K/W
DC operation double side cooled 0.031
Mounting force, ± 10 % 14 700
(1500)
N
(kg)
Approximate weight 255 g
Case style Conforms to JEDEC DO-200AB (B-PUK)
IFM trr
dir
dt
IRM(REC)
Qrr
t
Document Number: 93177 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 14-May-08 3
SD553C..S50L Series
Fast Recovery Diodes
(Hockey PUK Version), 560 A Vishay High Power Products
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.009 0.009 0.006 0.006
TJ = TJ maximum K/W
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015
60° 0.020 0.020 0.021 0.021
30° 0.036 0.036 0.036 0.036
30
40
50
60
70
80
90
100
110
120
130
0100200300400
30° 60° 90° 120°
180°
Average Forward Current (A)
Maxim um Allowable Heatsink Temperature (°C)
Cond uction Angle
SD 553C ..S50 L Se ries
(Sin gle Side C ooled)
R (D C ) = 0.073 K/W
th J- hs
10
20
30
40
50
60
70
80
90
100
110
120
130
0 1 00 200 3 00 400 5 00 600
30°
60°
90°
180° DC
120°
Average Forward Current (A)
Maxim um Allowable Heatsink Temperature (°C)
Conduction Period
SD 553C ..S50L Series
(Single Side C oole d)
R (D C) = 0.0 73 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800
30° 60° 90° 120° 180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature ( °C)
Conduction Angle
SD553C ..S50L Series
(D ouble Side Co oled )
R (DC ) = 0.031 K/W
thJ-hs
10
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200
30° 60°
90°
180°
DC
120°
Average Forw ard Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD553C..S50L Series
(Double Side Cooled)
R (D C) = 0.031 K/W
thJ-h s
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93177
4Revision: 14-May-08
SD553C..S50L Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 560 A
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
0 100 200 300 400 500 600 700 800
180°
120°
90°
60°
30°
Averag e Forw ard Current (A)
Maximum Average Forward Power Loss (W)
RMS Limit
Conduction Angle
SD553C..S50L Series
T = 125°C
J
0
500
1000
1500
2000
2500
3000
3500
0 200 400 600 800 1000 1200
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Limit
Maximum Average Forward Power Loss (W)
Conduction Period
SD553C..S50L Series
T = 125°C
J
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
001011
Number Of Equa l Amp litude Ha lf Cycle Curren t Pulses (N)
Pe a k H a lf S in e W a v e F o rw a rd C u rr e n t ( A )
SD 553C ..S50L Se ries
In itia l T = 1 25 °C
@ 60 Hz 0.0 083 s
@ 50 Hz 0.0 100 s
At Any Rated Load Condition And With
50% Rated V Applie d Follow ing Surg e
RRM
J
200 0
400 0
600 0
800 0
10000
12000
14000
11.010.0
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Peak Half Sine W ave Forward Current (A)
SD553C..S50L Series
Initial T = 125°C
No Voltage Reapplied
50% Rated V Reapplied
Versu s Pulse Tra in D u ration .
RRM
J
100
1000
10000
1.522.533.544.55
T = 25°C
J
Instantaneous Forward Voltage (V)
Instan taneous Forward Current (A)
T = 125°C
J
SD553C..S50L Series
0.001
0.01
0.1
0. 00 1 0 .0 1 0 .1 1 1 0 10 0
Sq u a re W ave Pu lse D ura tio n (s)
thJ-hs
Transien t Therm al Im ped an ce Z (K/W )
Ste a d y State V a lue
R = 0.073 K/W
(Single Sid e C o ole d)
R = 0.031 K/W
(Double Side Cooled)
(D C Ope ratio n)
thJ-hs
thJ- hs
SD 553 C..S50 L S erie s
Document Number: 93177 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 14-May-08 5
SD553C..S50L Series
Fast Recovery Diodes
(Hockey PUK Version), 560 A Vishay High Power Products
Fig. 11 - Typical Forward Recovery Characteristics
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
Fig. 15 - Maximum Total Energy Loss
Per Pulse Characteristics
0
50
100
150
200
250
300
350
400
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Forward Recovery (V)
T = 125°C
T = 25°C
J
J
SD553C..S50L Series
Rate Of Rise Of Forward Current - di/dt (A/us)
I
V
FP
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
500 A
I = 15 00 A
Sine Pulse
1000 A
SD 553 C ..S50L Se rie s
T = 125 °C; V > 100V
J
FM
r
0
500
100 0
150 0
200 0
250 0
0 50 100 150 200 250 300
Rate Of Fall O f Forward Current - di/dt (A/µs)
SD 553C ..S5 0L Series
T = 1 2 5 °C ; V > 1 00 V
I = 15 00 A
Sine Pu l se
FM
1000 A
500 A
J r
Ma xim um Re ve rse R eco ve ry C h a rg e - Q rr ( µC )
0
100
200
300
400
500
600
700
800
0 50 100 1 50 200 250 30 0
I = 1500 A
Sine Pulse
FM
1000 A
500 A
Rate Of Fall O f Forward Current - di/dt (A/µs)
M ax im um Rev erse Rec ov ery Cu rrent - Irr (A )
SD 5 5 3 C .. S5 0 L S e r ies
T = 1 2 5 °C ; V > 1 00 V
Jr
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Basewidth (µs)
Peak Forward Current (A)
10 joules per pulse
6
4
Sinu soid al Pu lse
SD553C..S50L Series
0.8
0.6
0.4
0.2
T = 1 25° C , V = 1 50 0 V
J
RRM
dv/dt = 1000V/µs
tp
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93177
6Revision: 14-May-08
SD553C..S50L Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 560 A
Fig. 16 - Frequency Characteristics
Fig. 17 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 18 - Frequency Characteristics
Fig. 19 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 20 - Frequency Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
50 Hz
200
10000
100
4000
dv/dt = 1000V/us
400
1000
2000
6000
Peak Forward Current (A)
Sinu soid al Pu lse
SD55 3C..S50L Series
3000
1500
T = 55°C , V = 1500V
C
RR M
tp
600
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Basewidth (µs)
Peak Forw ard Current (A)
10 jo ules pe r p ulse
6
4
dv/dt = 1000V/µs
T = 125°C, V = 1500V
J
RRM
Sin uso id al Pu ls e
0.8
0.6
0.4
8
SD553C..S50L Series
tp
1E2
1E3
1E4
1E1 1E 2 1E3 1E4
Pulse Basew idth (µs)
Trap e zo idal Pul se
50 H z
100
200
400
1000
1500
2000
4000
3000
600
T = 5 5°C, V = 1500V
RRM
6000
Peak Forward Current (A)
SD 55 3C ..S5 0 L S er ie s
dv/dt = 10 00V/us,
di/dt = 300A/us
C
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Basewidth (µs)
4
10 jou le s pe r pulse
6
Tra pez o ida l Pul se
Peak Forward Current (A)
T = 125°C, V = 1500V
J
RRM
dv/d t = 1000V/µs
di/dt = 100A/µs
0.8
0.6
SD553C..S50L Series
tp
8
0.4
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
Tra pe zoida l Pu lse
50 H z
100
200
400
1000
1500
2000
4000
3000
600
T = 55°C, V = 1500V
RRM
6000
Peak Forward Current (A)
SD553C..S50L Series
dv/dt = 1000V/us,
di/dt = 100A/us
C
tp
Document Number: 93177 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 14-May-08 7
SD553C..S50L Series
Fast Recovery Diodes
(Hockey PUK Version), 560 A Vishay High Power Products
ORDERING INFORMATION TABLE
1- Diode
2- Essential part number
3- 3 = Fast recovery
4- C = Ceramic PUK
5- Voltage code x 100 = VRRM (see Voltage Ratings table)
6-t
rr code
7- L = PUK case DO-200AB (B-PUK)
Device code
51324
67
SD 55 3 C 45 S50 L
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95246
Document Number: 95246 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 05-Nov-07 1
DO-200AB (B-PUK)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
58.5 (2.30) DIA. MAX.
53 (2.09) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03)
both ends
34 (1.34) DIA. MAX.
2 places
26.9 (1.06)
25.4 (1)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
