Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Ease of Paralleling BVDSS 500V
▼ Fast Switching Characteristic RDS(ON) 1.5Ω
▼ Simple Drive Requirement ID4.5A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W
Data & specifications subject to change without notice
Storage Temperature Range -55 to 150
200907281
Parameter
IRF830I-HF
+20
Rating
500
Halogen-Free Product
4.5
18
36.7
4.5
2.8
101
-55 to 150
1
Parameter
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
G
D
S
A
PEC MOSFET provide the power designer with the best combination of
fast switching , lower on-resistance and reasonable cost.
GDSTO-220CFM(I)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 500 - - V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.7A - - 1.5 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=2.7A - 2.4 - S
IDSS Drain-Source Leakage Current VDS=500V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge3ID=3.1A - 28 45 nC
Qgs Gate-Source Charge VDS=400V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 16 - nC
td(on) Turn-on Delay Time3VDD=250V - 10 - ns
trRise Time ID=3.1A - 15 - ns
td(off) Turn-off Delay Time RG=12Ω,VGS=10V - 41 - ns
tfFall Time RD=80.6Ω-20-ns
Ciss Input Capacitance VGS=0V - 710 1140 pF
Coss Output Capacitance VDS=25V - 170 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF
RgGate Resistance f=1.0MHz - 2 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3IS=4.5A, VGS=0V - - 1.5 V
trr Reverse Recovery Time3IS=3.1A, VGS=0V, - 370 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 3.9 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
IRF830I-HF
IRF830I-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0
2
4
6
8
048121620
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
7.0V
6.0V
5.0V
VG=4.5V
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=2.7A
VG=10V
0
1
2
3
4
5
0 4 8 12 16 20 24
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
7.0V
6.0V
5.0V
VG=4.5V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150oCT
j = 25oC
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
IRF830I-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
2
4
6
8
10
12
0 10203040
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=3.1A
VDS =100V
V DS =250V
V DS =400V
10
100
1000
10000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
Operation in this area
limited by RDS(ON)
