PAGE . 1
REV.0.1-FEB.10.2009
2N7002TB
60V N-CHANNEL ENHANCEMENT MODE MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=5Ω
• RDS(ON), VGS@4.5V,IDS@50mA=7.5Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State
Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DA T A
• Case: SOT-523, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.002 grams
• Marking: 72
M aximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )
RETEMARAPLOBMYSTIMILSTINU
egatloVecruoS-niarD V
DS
06V
egatloVecruoS-staG V
GS
+ 02V
tnerruCniarDsuonitnoC I
D
511Am
tnerruCniarDdesluP
)1(
I
DM
008Am
noitapissiDrewoPmumixaM
T
A
52=
o
C
P
D
051
09 Wm
T
A
57=
o
C
)detnuomBCP(ecnatsiseRlamrehTtneibmAot-noitcnuJ
2
R
Θ
JA
338
o
W/C
egnaRerutarepmeTegarotSdnanoitcnuJgnitarepO T
J
T,
STG
051ot55-
o
C
Note 1 : Maximum DC current limited by the package
2 : Surface mounted on FR4 board,t<10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DSEIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
GS
D
12
3
Unit inch(mm):
SOT-523
0.013(0.33)
0.009(0.23)
0.052(1.30)
0.043(1.10)
0.067(1.70)
0.059(1.50)
0.007(0.17)
0.002(0.07)
0.012(0.30)
0.004(0.10)
0.024(0.60)
0.019(0.50)
0.044(1.10)
0.035(0.90)
0.067(1.70)
0.059(1.50)