2N7002TB 60V N-CHANNEL ENHANCEMENT MODE MOSFET 0.044(1.10) 0.035(0.90) 0.067(1.70) 0.059(1.50) * Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-Resistance * Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. * In compliance with EU RoHS 2002/95/EC directives Unitinch(mm) 0.052(1.30) 0.043(1.10) 0.067(1.70) 0.059(1.50) MECHANICAL DATA 0.024(0.60) 0.019(0.50) 0.007(0.17) 0.002(0.07) * RDS(ON), VGS@10V,IDS@500mA=5 * RDS(ON), VGS@4.5V,IDS@50mA=7.5 0.013(0.33) 0.009(0.23) SOT-523 FEATURES * Case: SOT-523, Plastic * Terminals: Solderable per MIL-STD-750, Method 2026 3 D * Approx. Weight: 0.002 grams * Marking: 72 0.012(0.30) 0.004(0.10) G 1 S 2 Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS 60 V Gats-Source Voltage VGS +20 V Continous Drain Current I D 115 mA DM 800 mA PD 150 90 mW RJA 833 T J , T S TG -55 to 150 Pulsed Drain Current (1) Maximum Power Dissipation Junction-to Ambient Thermal Resistance (PCB mounted)2 O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e I TA=25oC TA=75oC o C/W o C Note 1 : Maximum DC current limited by the package 2 : Surface mounted on FR4 board,t <10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DSEIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.1-FEB.10.2009 PAGE . 1 2N7002TB ELECTRICAL CHARACTERISTICS PAR AME T E R S YM B OL T E S T C ON D IT ION MIN . T Y P. MAX . U N IT S 60 - - V 1 - 2 .5 V S ta tic D=10A D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS V GS = 0 V , I G a t e Thr e s ho l d Vo l t a g e V GS ( t h ) V D S = V GS , I D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( ON) V GS = 4 . 5 V , I D=50mA - - 7 .5 D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( ON) V GS = 1 0 V , I D=500mA - - 5 D=250A Ze r o G a t e Vo l t a g e D r a i n C ur r e nt I DSS V D S = 6 0 V , V GS = 0 V - - 1 A Ga te B o d y L e a k a g e I GS S V GS =+ 2 0 V , V D S = 0 V - - +100 nA 100 - - mS - 0 .6 0 .7 - 0 .1 - - 0 .0 8 - - 9 15 - 21 26 - - 50 - - 25 - - 5 - - 250 - 0 .9 3 1 .2 F o r w a r d Tr a n s c o n d u c t a n c e g FS V D S=1 5 V, I D=250mA D y n a mic To t a l G a t e C h a r g e QG G a t e - S o ur c e C ha r g e Q GS G a t e - D r a i n C ha r g e Q GD Tu r n - O n D e l a y Ti m e t ON Tu r n - O f f D e l a y Ti m e t OF F In p u t C a p a c i t a n c e C IS S O ut p ut C a p a c i t a nc e C OS S R e v e r s e Tr a n s f e r C a p a c i t a n c e C RS S V D S=1 5 V, I D=500mA , V GS = 4 . 5 V V D D =1 0 V,RL=2 0 I D = 5 0 0 m A , V GE N = 1 0 V , R G = 1 0 V D S = 2 5 V, V GS= 0 V, f = 1 . 0 M H z nC ns pF S o u rc e -D ra in D io d e M a x. D i o d e F o r w a r d C ur r e nt I D i o d e F o re a rd Vo lta g e - S V SD I S = 2 5 0 m A , V GS = 0 V VDD Switching Test Circuit VIN VDD Gate Charge Test Circuit RL mA VGS RL VOUT RG 1mA RG REV.0.1-FEB.10.2009 PAGE . 2 2N7002TB MOUNTING PAD LAYOUT SOT-523 Unitinch(mm) 0.053 (1.35) 0.017 (0.45) 0.016 (0.40) 0.019 (0.50) 0.019 (0.50) ORDER INFORMATION * Packing information T/R - 4K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2011 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-FEB.10.2009 PAGE . 3