Silicon Epitaxial Planar Transistor: BCX19 Features: tHigh current (500mA) tLow voltage (45V) Applications: t tSaturated switching and driver applications tComplement: BCX17 SOT-23 Ordering Information Type No. Marking: Package Code: BCX19 U1 SOT-23 Maximum Ratings & Characteristics: Tamb=25o Parameter: Symbol: Value: Unit: Collector - Base Voltage VCBO 50 V Collector - Emitter Voltage VCEO 45 V Emitter - Base Voltage Vebo 5 V Collector Current - Continuous IC 500 mA Collector Current - Peak ICM 1 A Total Power Dissipation PTOT 250 mW Thermal Resisitance, Junction to Ambient RJA 417 o C/W Junction and Storage Temperature Tj, Tstg -65 to +150 o C Electrical Characteristics: Tamb=25o Collector - Base Breakdown Voltage V(BR)CBO IC=-100A IE=0 50 V Collector - Emitter Breakdown Voltage V(BR)CEO IC=-10mA IB=0 45 V Emmiter - Base Breakdown Voltage V(BR)EBO IE=-10A, IC=0 5 V ICBO VCB=-20V ,IE=0 0.1 A IEBO VEB=5V, IC=0 0.1 A DC Current Gain hFE VCE=1V, IC=100mA VCE=1V, IC=300mA VCE=1V, IC=500mA Collector - Emitter Saturation Voltage VCE(sat) IC=-500mA IB=-50mA 0.62 V Base Emitter Voltage VBE IC=-500mA ,VCE=-2V 1.2 V Transition Frequency fT VCE=5V, IC=10mA, f=100MHz O[[W!^^^MHYULSSJVT O[[W!^^^UL^HYRJVT O[[W!^^^JWJJV\R 100 70 40 100 600 MHz Package Outline O[[W!^^^MHYULSSJVT O[[W!^^^UL^HYRJVT O[[W!^^^JWJJV\R