74HC03; 74HCT03 Quad 2-input NAND gate Rev. 3 -- 27 June 2013 Product data sheet 1. General description The 74HC03; 74HCT03 is a quad 2-input NAND gate with open-drain outputs. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits Input levels: For 74HC03: CMOS level For 74HCT03: TTL level ESD protection: HBM JESD22-A114F exceeds 2000 V MM JESD22-A115-A exceeds 200 V Multiple package options Specified from 40 C to +85 C and from 40 C to +125 C 3. Ordering information Table 1. Ordering information Type number 74HC03N Package Temperature range Name Description Version 40 C to +125 C DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1 40 C to +125 C SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 40 C to +125 C SSOP14 plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1 40 C to +125 C TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 74HCT03N 74HC03D 74HCT03D 74HC03DB 74HCT03DB 74HC03PW 74HCT03PW 74HC03; 74HCT03 NXP Semiconductors Quad 2-input NAND gate 4. Functional diagram 1 1A 2 1B 1Y 3 4 2A 5 2B 2Y 6 9 3A 10 3B 3Y 8 12 4A 13 4B 4Y 11 mna212 Fig 1. Y A B GND DDD Logic symbol Fig 2. 001aab715 IEC logic symbol Fig 3. Logic diagram (one gate) 5. Pinning information 5.1 Pinning +& +&7 +& +&7 $ 9&& % % $ 9&& < $ % % < < $ $ < % % % < $ *1' < $ % < *1' $ < DDD Fig 4. DDD Pin configuration DIP14 and SO14 Fig 5. Pin configuration (T)SSOP14 5.2 Pin description Table 2. Pin description Symbol Pin Description 1A to 4A 1, 4, 9, 12 data input 1B to 4B 2, 5, 10, 13 data input 1Y to 4Y 3, 6, 8, 11 data output GND 7 ground (0 V) VCC 14 supply voltage 74HC_HCT03 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 27 June 2013 (c) NXP B.V. 2013. All rights reserved. 2 of 15 74HC03; 74HCT03 NXP Semiconductors Quad 2-input NAND gate 6. Functional description Table 3. Function table[1] Input Output nA nB nY L L Z L H Z H L Z H H L [1] H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state. 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage VO output voltage IIK input clamping current IOK Conditions Min Max Unit 0.5 +7 V [1] 0.5 +7 V VI < 0.5 V or VI > VCC + 0.5 V [1] - 20 mA output clamping current VO < 0.5 V [1] - 20 mA IO output current 0.5 V < VO - 25 mA ICC supply current - 50 mA IGND ground current 50 - mA Tstg storage temperature 65 +150 C DIP14 package - 750 mW SO14 and (T)SSOP14 packages - 500 mW total power dissipation Ptot [1] [2] [2] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. For DIP14 package: Ptot derates linearly with 12 mW/K above 70 C. For SO14 package: Ptot derates linearly with 8 mW/K above 70 C. For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C. 8. Recommended operating conditions Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V) Symbol Parameter Conditions 74HC03 Min Typ 74HCT03 Max Min Typ Unit Max VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 - VCC 0 - VCC V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature 40 +25 +125 40 +25 +125 C 74HC_HCT03 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 27 June 2013 (c) NXP B.V. 2013. All rights reserved. 3 of 15 74HC03; 74HCT03 NXP Semiconductors Quad 2-input NAND gate Table 5. Recommended operating conditions ...continued Voltages are referenced to GND (ground = 0 V) ...continued Symbol Parameter t/V Conditions input transition rise and fall rate 74HC03 74HCT03 Unit Min Typ Max Min Typ Max - - 625 - - - VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V VCC = 6.0 V - - 83 - - - ns/V VCC = 2.0 V ns/V 9. Static characteristics Table 6. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max VCC = 2.0 V 1.5 1.2 - 1.5 - 1.5 - V VCC = 4.5 V 3.15 2.4 - 3.15 - 3.15 - V VCC = 6.0 V 4.2 3.2 - 4.2 - 4.2 - V 74HC03 VIH VIL VOL HIGH-level input voltage LOW-level input voltage LOW-level output voltage VCC = 2.0 V - 0.8 0.5 - 0.5 - 0.5 V VCC = 4.5 V - 2.1 1.35 - 1.35 - 1.35 V VCC = 6.0 V - 2.8 1.8 - 1.8 - 1.8 V IO = 20 A; VCC = 2.0 V - 0 0.1 - 0.1 - 0.1 V IO = 20 A; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V IO = 20 A; VCC = 6.0 V - 0 0.1 - 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.26 - 0.33 - 0.4 V IO = 5.2 mA; VCC = 6.0 V VI = VIH or VIL - 0.16 0.26 - 0.33 - 0.4 V II input leakage current VI = VCC or GND; VCC = 6.0 V - 0.1 - - 1 - 1 A IOZ OFF-state output current per input pin; VI = VIL; VO = VCC or GND; other inputs at VCC or GND; VCC = 6.0 V; IO = 0 A - - 0.5 - 5.0 - 10 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - 2.0 - - 20 - 40 A CI input capacitance - 3.5 - - - - - pF 74HCT03 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V VOL LOW-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 A - 0 0.1 - 0.1 - 0.1 V IO = 4.0 mA - 0.15 0.26 - 0.33 - 0.4 V 74HC_HCT03 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 27 June 2013 (c) NXP B.V. 2013. All rights reserved. 4 of 15 74HC03; 74HCT03 NXP Semiconductors Quad 2-input NAND gate Table 6. Static characteristics ...continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max II input leakage current VI = VCC or GND; VCC = 5.5 V - - 0.1 - 1 - 1 A IOZ OFF-state output current per input pin; VI = VIL; VO = VCC or GND; other inputs at VCC or GND; VCC = 5.5 V; IO = 0 A - - 0.5 - 5.0 - 10 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 2.0 - 20 - 40 A ICC additional supply current per input pin; VI = VCC 2.1 V; IO = 0 A; other inputs at VCC or GND; VCC = 4.5 V to 5.5 V - 100 360 - 450 - 490 A CI input capacitance - 3.5 - - - - - pF 10. Dynamic characteristics Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for load circuit, see Figure 7. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) VCC = 2.0 V - 28 95 120 145 ns VCC = 4.5 V - 10 19 24 29 ns VCC = 5.0 V; CL = 15 pF - 8 - - - ns VCC = 6.0 V - 8 16 20 25 ns VCC = 2.0 V - 19 75 95 110 ns VCC = 4.5 V - 7 15 19 22 ns VCC = 6.0 V - 6 13 16 19 ns - 4 - - - pF 74HC03 tpd tt CPD propagation delay nA, nB to nY; see Figure 6 transition time power dissipation capacitance 74HC_HCT03 Product data sheet [1] [2] see Figure 6 per package; VI = GND to VCC [3] All information provided in this document is subject to legal disclaimers. Rev. 3 -- 27 June 2013 (c) NXP B.V. 2013. All rights reserved. 5 of 15 74HC03; 74HCT03 NXP Semiconductors Quad 2-input NAND gate Table 7. Dynamic characteristics ...continued GND = 0 V; CL = 50 pF; for load circuit, see Figure 7. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) - 12 24 30 36 ns - 10 - - - ns 74HCT03 [1] propagation delay nA, nB to nY; see Figure 6 tpd VCC = 4.5 V VCC = 5.0 V; CL = 15 pF tt transition time VCC = 4.5 V; see Figure 6 [2] CPD power dissipation capacitance per package; VI = GND to VCC 1.5 V [3] [1] - 7 15 19 22 ns - 4 - - - pF tpd is the same as tPLZ and tPZL. [2] tt is the same as tTHL. [3] CPD is used to determine the dynamic power dissipation (PD in W): PD = CPD VCC2 fi N + (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL VCC2 fo) = sum of outputs. 11. Waveforms 9, 90 Q$Q%LQSXW *1' W3/= W3=/ 9&& Q