TPCF8B01
2003-04-08
1
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
TPCF8B01
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 72 mÙ (typ.)
• High forward transfer admittance: |Yfs| = 4.7 S (typ.)
• Low leakage current: IDSS = −10 ìA (max) (VDS = −20 V)
• Enhancement-model: Vth = −0.5 to −1.2 V(VDS =−10 V, ID = −200 ìA)
• Low forward voltage: VFM = 0.46V(typ.)
Maximum Ratings
MOSFET (Ta
=
25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS −20 V
Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V
Gate-source voltage VGSS ±8 V
DC (Note 1) ID −2.7
Drain current Pulse (Note 1) IDP −10.8 A
Single pulse avalanche energy (Note 4) EAS 1.2 mJ
Avalanche current IAR −1.35 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5) EAR 0.11 mJ
SBD (Ta
=
25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage VRRM 20 V
Average forward current (Note 2a, 6) IF(AV) 1.0 A
Peak one cycle surge forward current
(non-repetitive) IFSM 7(50Hz) A
Maximum Ratings for MOSFET and SBD (Ta
=
25°C)
Characteristics Symbol Rating Unit
Single-device operation
(Note 3a) PD (1) 1.35
Drain power
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b) PD (2) 1.12
Single-device operation
(Note 3a) PD (1) 0.53
Drain power
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b) PD (2) 0.33
W
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7), please refer to the next page.
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 0.011 g (typ.)
Circuit Configuration
Marking (Note 7)
8
1
5
4
F8A
1. Anode 5. Drain
2. Anode 6. Drain
3.Source 7. Cathode
4. Gate 8. Cathode
1
2
3
4
8
7
6
5
TPCF8B01
2003-04-08
2
Thermal Characteristics for MOSFET and SBD
Characteristics Symbol Max Unit
Single-device operation
(Note 3a) Rth (ch-a) (1) 92.6
Thermal resistance,
channel to ambient
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b) Rth (ch-a) (2) 111.6 °C/W
Single-device operation
(Note 3a) Rth (ch-a) (1) 235.8
Thermal resistance,
channel to ambient
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b) Rth (ch-a) (2) 378.8 °C/W
This transistor is an electrostatic sensitive device. Please handle with caution.
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier
products. This current leakage and improper operating temperature or voltage may cause thermal runaway.
Please take forward and reverse loss into consideration when you design.
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: VDD = −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −1.35 A
Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature.
Note 6: Rectangular waveform (α =180o), VR =15V.
Note 7: Black round marking “●” locates on the left lower side of parts number marking “F8A” indicates terminal
No. 1.
FR-4
25.4 × 25.4 × 0.8
(単位: mm)
(b)
FR-4
25.4 × 25.4 × 0.8
(単位 t: mm)
(a)
25.4
25.4
TPCF8B01
2003-04-08
3
Electrical Characteristics (Ta
=
25°C)
MOSFET
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ±10 µA
Drain cut-off current IDSS VDS = −20 V, VGS = 0 V −10 µA
V (BR) DSS ID = −10 mA, VGS = 0 V −20
Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 8V −12 V
Gate threshold voltage Vth VDS = −10 V, ID = −200 µA −0.5 −1.2 V
RDS (ON) VGS = −1.8 V, ID = −0.7 A 215 300
RDS (ON) VGS = −2.5 V, ID = −1.4A 110 160
Drain-source ON resistance
RDS (ON) VGS = −4.5 V, ID = −1.4 A 72 110
mΩ
Forward transfer admittance |Yfs| VDS = −10 V, ID = −1.4 A 2.4 4.7 S
Input capacitance Ciss 470
Reverse transfer capacitance Crss 70
Output capacitance Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
80
pF
Rise time tr 5
Turn-on time ton 9
Fall time tf 8
Switching time
Turn-off time toff
Duty
<
=
1%, tw = 10 µs 26
ns
Total gate charge
(gate-source plus gate-drain) Qg 6
Gate-source charge Qgs 4
Gate-drain (“miller”) charge Qgd
VDD
∼
−
−16 V, VGS = −5 V,
ID = −2.7 A
2
nC
MOSFET Source-Drain Ratings and Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1)
IDRP -10.8 A
Forward voltage (diode) VDSF IDR = −2.7 A, VGS = 0 V -1.2 V
SBD
Characteristics Symbol Test Condition Min Typ. Max Unit
VFM(1) IFM = 0.7 A 0.43 V
Peak forward voltage VFM(2) IFM = 1.0 A 0.46 0.49 V
Repetitive peak reverse current IRRM VRRM = 20 V 50 µA
Junction capacitance Cj VR = 10 V, f = 1 MHz 54 pF
RL = 7.14 Ω
VDD
∼
−
−10 V
−5 V
VGS 0 V
4.7 Ω
ID = −1.4 A
VOUT
TPCF8B01
2003-04-08
4
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conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
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0
00707EAA
RESTRICTIONS ON PRODUCT USE
