BF494 tm NPN RF Transistor TO-92 Absolute Maximum Ratings * Symbol 1. Collector 2. Emitter 3. Base Ta = 25C unless otherwise noted Value Unit VCEO Collector-Emitter Voltage Parameter 20 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 30 mA TJ Junction Temperature 150 C TSTG Storage Temperature Range - 55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol Parameter Value Unit PD Total Device Dissipation, by RJA Derate above 25C 350 2.8 mW mW/C RJC Thermal Resistance, Junction to case 125 C/W RJA Thermal Resistance, Junction to Ambient 357 C/W Electrical Characteristics* Symbol TC = 25C unless otherwise noted Parameter Conditions Min. Max. Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IB = 0 20 V V(BR)CBO Collector-Base BreakdownVoltage V(BR)EBO Emitter-Base Breakdown Voltage IC = 10A, IE = 0 30 V IE = 10A, IC = 0 5.0 V ICES Collector-Emitter Sustaining Current VCE = 40V, VEB = 0V hFE DC Current Gain VCE = 10V, IC = 1mA VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 5mA 0.2 V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 5mA 0.92 V VBE(ON) Base-Emitter On Voltage VCE = 10V, IC = 10mA 740 mV 10 67 650 nA 222 * DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2% (c)2006 Fairchild Semiconductor Corporation BF494 Rev. A 1 www.fairchildsemi.com BF494 NPN RF Transistor July 2006 BF494 NPN RF Transistor Package Dimensions TO-92 +0.25 4.58 0.20 4.58 -0.15 0.10 14.47 0.40 0.46 1.27TYP [1.27 0.20] (0.25) +0.10 0.38 -0.05 0.38 -0.05 0.20 3.86MAX 3.60 1.02 0.10 +0.10 1.27TYP [1.27 0.20] (R2.29) Dimensions in Millimeters 2 BF494 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 3 BF494 Rev. A www.fairchildsemi.com BF494 NPN RF Transistor TRADEMARKS