MBR2050/2060CT MBRB2050/2060CT MBR2050/2060CT -1 SENSITRON SEMICONDUCTOR Technical Data Data Sheet 2803, Rev. B MBR2050/2060CT MBRB2050/2060CT MBR2050/2060CT-1 SCHOTTKY RECTIFIER Applications: * Switching power supply * Converters * Free-Wheeling diodes * Reverse battery protection Features: * * * * * * 150 TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability MBR2050CT MBR2060CT TO-220 Case styles MBRB2050CT MBRB2060CT D2PAK MBR2050CT-1 MBR2060CT-1 TO-262 Mechanical Dimensions: In Inches / mm TO-220AB * ! ! !!"#$* * % & '(&)*+,,---. & ./0*12&%# %3 & ./0* MBR2050/2060CT SENSITRON MBRB2050/2060CT SEMICONDUCTOR MBR2050/2060CT -1 Data Sheet 2803, Rev. B * 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * MBR2050/2060CT MBRB2050/2060CT MBR2050/2060CT-1 SENSITRON SEMICONDUCTOR Data Sheet 2803, Rev. B Maximum Ratings: Characteristics Peak Inverse Voltage Symbol VRWM Condition - 50 60 Max. Average Forward IF(AV) 50% duty cycle @TC =135C, rectangular wave form Max. Peak One Cycle NonRepetitive Surge Current (per leg) IFSM 8.3 ms, half Sine pulse Max. MBR2050CT MBRB2050CT-1 MBR2050CT-1 MBR2060CT MBRB2060CT-1 MBR2060CT-1 20 Units V A 150 A Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg)* Symbol VF1 VF2 Max. Reverse Current (per leg)* IR1 IR2 Max. Junction Capacitance (per leg) Max. Voltage Rate of Change * CT dv/dt Condition @ 10A, Pulse, TJ = 25 C @ 20 A, Pulse, TJ = 25 C @ 10 A, Pulse, TJ = 125 C @ 20 A, Pulse, TJ = 125 C @VR = rated VR TJ = 25 C @VR = rated VR TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz - Max. 0.80 0.95 0.70 0.85 0.15 Units V V mA 150.0 mA 400 pF 10,000 V/s Pulse Width < 300s, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case (per leg) Maximum Thermal Resistance Junction to Case (per package) Maximum Thermal Resistance, Case to Heat Sink Approximate Weight Mounting Torque Case Style Symbol TJ Tstg RJC Condition DC operation Specification -55 to +175 -55 to +175 2.0 Units C C C/W RJC DC operation 1.0 C/W RCS Mounting surface, smooth and greased (only for TO-220) - 0.50 C/W wt TM 2 g 6(Min.) Kg-cm 12(Max.) TO-220AB D2PAK TO-262(Suffix"-1" for TO-262,"MBRB x" for D2PAK) Data Sheet 2921, Rev. - * 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * MBR2050/2060CT MBRB2050/2060CT MBR2050/2060CT -1 SENSITRON SEMICONDUCTOR Data Sheet 2803, Rev. B Typical Forward Characteristics Typical Reverse Characteristics Instantaneous Reverse Current - IR (mA) 102 175 C Instantaneous Forward Current - IF (A) 101 175 C 150 C 101 125 C 100 100 C 75 C 10-1 50 C 10-2 25 C 10-3 125 C 0 Junction Capacitance - C T (pF) 0 10 0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop - VF (V) 20 30 40 Reverse Voltage - VR (V) 50 60 Typical Junction Capacitance 25 C 0.2 10 0.8 400 350 300 250 200 150 100 0 10 20 30 40 Reverse Voltage - VR (V) 50 60 * 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * SENSITRON SEMICONDUCTOR MBR2050/2060CT MBRB2050/2060CT MBR2050/2060CT -1 Data Sheet 2803, Rev. B DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. * ! ! !!"#$* * % & '(&)*+,,---. & ./0*12&%# %3 & ./0*