SMD Switching DiodeSMD Switching Diode
Preliminary
Page 1
QW-A0020
REV:A
SMD Diodes Specialist
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
nA
V
50
1.0
IR
VF
Reverse current
Forward voltage
Parameter Conditions Symbol Min Typ
Max
Unit
VR = 75 V
IF = 100 mA DC
nS
PF
4
3
CT
Trr
Capacitance between terminals
Reverse recovery time
f = 1 MHZ,and 0.5VDC reverse voltage
VR = 6V ,IF =10 mA, RL =50 ohms
mA
V
V
1000
100
80
90
IO
VR
VRRM
IFSM
O
Maximum Rating (at TA=25 C unless otherwise noted)
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method)
mA
225
Repetitive peak forward current
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter Conditions Symbol Min Typ
Max
Unit
OC
OC
+125
+125
-40
TSTG
Tj
Storage temperature
Junction temperature
mW
300
PD
Power Dissipation
IFRM
mA
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
1005(2512)
0.020(0.50) Typ.
0.040(1.00) Typ.
High Speed
CDSFR101A
Features
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current (<50nA).
High mounting capability, strong surge
withstand, high reliability.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
(RoHs Device)