CJD44H11 NPN CJD45H11 PNP COMPLEMENTARY SILICON POWER TRANSISTOR Centra i . DESCRIPTION: DPAKE! DPAK CASE The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power amplifier MAXIMUM RATINGS (Tc=25C) Coilector-E mitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation (Tq =25C) Power Dissipation (T a=25C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance applications. SYMBOL UNITS VCEO 80 Vv VEBO 5.0 Vv Ic 8.0 A Iom 16 A Pp 20 WwW Pp 1.75 WwW TT stg -65 to +1 50 C 8IC 6.25 C/W OJA 71.4 C/W ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) SYMBOL ICES lEBO BVCEO VCE(SAT) VBE(SAT) hee hee fT fT Cob Cob tq + t; tg + tr TEST CONDITIONS MIN TYP MAX UNITS VcE=80V 10 pA Vep=5.0V 50 pA Ic=30mA 80 Vv Ic=8.0A, lR=400mA 1.0 Vv Ic=8.0A, IRp=800mA 1.5 Vv VoeE=1.0V, Io=2.0A 60 VoE=1.0V, Io=4.0A 40 Voe=10V, lo=500mA, f=20MHz (CJD44H11) -60 MHz VcE=10V, [c=500mA, f=20MHz (CJD45H11) 50 MHz Vocp=10V, Ie=0, f=0.1MHz (CJD44H11) 120 pF Vop=10V, Ie=0, f=0.1MHz (CJUD45H11) 220 pF Io=5.0A, Ip4=500mA (CJD44H1 1) 320 ns IC=5.0A, Ipq=500mA (CJD45H1 1) 150 ns 114 SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ts IO=5.0A, Ig4=l2=500mA (CJD44H11, CUD45H11) 450 ns tf I=5.0A, Ip1=Igo=500mA (CJD44H11) 130 ns tt I=5.0A, Ip 74=Igo=500mA (CJD45H11) 100 ns All dimensions in inches (mm). TOP VIEW 0862.19 .250(6.35) -086(2. : . ener 266(6.73) ~GEROS le SRSESE | _c2010.70)_ ae toy ' ' -368(9.35) | hee eee + -409(10.40) .020(0.51 1 2 3 MINIMUM _ yo vad, oa0tt 62) esa. | -ofleszgee -173(4.40 Se -181(4.60) LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR Al 115