BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 -- 16 September 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at VDS = 50 V; IDq = 1.3 A. f PL(AV) Gp D IMD3 IMDshldr PAR (MHz) (W) (dB) (%) (dBc) (dBc) (dB) 2-tone, class-AB 1452 to 1492 250 15 34 24 - - DVB-T (8k OFDM) 1452 to 1492 65 16 19 - 32 [1] 9 [2] Mode of operation [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Digital transmitter applications DVB at 1.5 GHz Industrial applications at 1.5 GHz BLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G15L-500H (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 2 1 5 3 3 4 5 4 [1] source 2 sym117 BLF6G15LS-500H (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source 1 2 1 5 3 3 4 5 4 [1] 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G15L-500H - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A BLF6G15LS-500H - earless flanged balanced LDMOST ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 100 V VGS gate-source voltage 0.5 +13 V ID drain current - 45 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 16 September 2011 (c) NXP B.V. 2011. All rights reserved. 2 of 13 NXP Semiconductors BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Thermal characteristics Parameter Conditions Rth(j-case) thermal resistance from junction to case Tcase = 85 C; PL = 65 W Typ Unit 0.18 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA Min Typ Max Unit 100 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.4 1.8 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 38 42 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 270 mA 1.33 2.3 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.5 A - 100 193 m Table 7. RF characteristics RF characteristics in NXP class-AB production circuit, in frequency range 1452 MHz to 1492 MHz; Tcase = 25 C. Symbol Parameter Conditions Min Typ Max Unit - 50 - V DVB-T (8k OFDM), class-AB VDS drain-source voltage IDq quiescent drain current - 1.3 - A PL(AV) average output power - 65 - W Gp power gain 14.5 16 - dB D drain efficiency IMDshldr intermodulation distortion shoulder [1] PAR peak-to-average ratio [2] 16 19 - % - 32 30 dBc 8.5 9 - dB [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 6.1 Ruggedness in class-AB operation The BLF6G15L-500H and BLF6G15LS-500H are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 1.3 A at rated power. BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 16 September 2011 (c) NXP B.V. 2011. All rights reserved. 3 of 13 NXP Semiconductors BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f ZS ZL MHz 1452 1.226 j2.663 2.137 j2.750 1472 1.375 j2.757 1.869 j2.378 1492 1.15 j2.735 1.817 j2.684 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.2 Graphs 7.2.1 2-Tone 001aao061 18 40 D Gp (dB) D (%) Gp (dB) 30 16 001aao062 18 0 IMD3 (dBc) -12 16 IMD3 14 Gp 12 10 0 100 200 20 14 10 12 0 300 400 PL(AV) (W) -24 -36 10 0 VDS = 50 V; IDq = 1.3 A; f = 1490 MHz. Fig 2. Gp 100 200 -48 300 400 PL(AV) (W) VDS = 50 V; IDq = 1.3 A; f = 1490 MHz. 2-Tone power gain and drain efficiency as function of average load power; typical values Fig 3. 2-Tone power gain and third order intermodulation distortion as function of average load power; typical values BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 16 September 2011 (c) NXP B.V. 2011. All rights reserved. 4 of 13 BLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 7.2.2 DVB-T 001aao063 17 Gp (dB) -5 IMDshldr (dBc) IMDshldr 16 001aao064 12 40 D (%) D PAR (dB) -15 30 8 PAR -25 15 20 Gp 4 10 -35 14 -45 300 400 PL(AV) (W) 13 0 100 200 0 0 VDS = 50 V; IDq = 1.3 A; f = 1490 MHz. Fig 4. 001aao065 PAR (dB) 9 Fig 5. 23 DVB-T peak-to-average ratio and drain efficiency as function of average load power; typical values 001aao066 20 25 D (%) PAR 0 300 400 PL(AV) (W) 200 VDS = 50 V; IDq = 1.3 A; f = 1490 MHz. DVB-T power gain and intermodulation distortion shoulder as function of average load power; typical values 10 100 -10 IMDshldr (dBc) Gp (dB) Gp -20 15 8 21 -30 D 7 19 IMDshldr 10 -40 6 17 5 1400 1450 5 1400 15 1550 1500 f (MHz) -50 1550 1500 f (MHz) VDS = 50 V; IDq = 1.3 A; PL(AV) = 65 W. Fig 6. 1450 VDS = 50 V; IDq = 1.3 A; PL(AV) = 65 W. DVB-T peak-to-average ratio and drain efficiency as function of frequency; typical values Fig 7. DVB-T power gain and intermodulation distortion shoulder as a function of frequency; typical values BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 16 September 2011 (c) NXP B.V. 2011. All rights reserved. 5 of 13 BLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 7.2.3 Reliability 001aao067 106 Years 105 (1) (2) 104 (3) (4) 103 102 (5) (6) 10 (7) 1 0 5 10 15 20 lDS(DC) (A) TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) 1 / . (1) Tj = 100 C (2) Tj = 120 C (3) Tj = 140 C (4) Tj = 146 C (5) Tj = 160 C (6) Tj = 180 C (7) Tj = 200 C Fig 8. BLF6G15LS-500H electromigration (IDS(DC), total device) BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 16 September 2011 (c) NXP B.V. 2011. All rights reserved. 6 of 13 BLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 7.3 Test circuit 5 mm C14 C16 R3 C19 C2 R1 C6 C4 8 mm C3 C1 Vds C5 25 mm 14 mm 17 mm 23 mm C12 C13 50 mm 5 mm C7 C15 C17 C11 C9 R2 C18 C8 C10 8 mm 14 mm 23 mm 5 mm 60 mm 60 mm 001aao068 Printed-Circuit Board (PCB): Rogers 4350; r = 3.66; thickness = 0.30 mm; thickness copper plating = 35 m. See Table 9 for list of components. Fig 9. Component layout for class-AB common source amplifier Table 9. List of components See Figure 9 for component layout. Component Description Value Remarks C1 electrolytic capacitor 470 F, 63 V Elco C2, C7, C16, C17 multilayer ceramic chip capacitor 10 F TDK C3, C8 multilayer ceramic chip capacitor 6.2 pF ATC800B C4, C5, C9, C10 multilayer ceramic chip capacitor 1.0 F 1206 10 % C6, C11 multilayer ceramic chip capacitor 10 nF 1205 10 % C12, C13 multilayer ceramic chip capacitor 22 pF ATC800B C18, C19 multilayer ceramic chip capacitor 22 pF ATC800B C15 electrolytic capacitor 470 F; 63 V R1, R2 SMD resistor 5R1 0805 R3 SMD resistor 470 (not fitted) 1206 BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 16 September 2011 (c) NXP B.V. 2011. All rights reserved. 7 of 13 BLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 0.185 0.465 0.007 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 0.165 0.455 0.004 1.218 1.219 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 00-03-03 10-02-02 SOT539A Fig 10. Package outline SOT539A BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 16 September 2011 (c) NXP B.V. 2011. All rights reserved. 8 of 13 BLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor Earless flanged balanced LDMOST ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) mm mm w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 nom 0.54 0.01 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 max nom min A b E E1 4.7 11.81 0.18 31.55 31.52 c D D1 9.5 9.53 4.2 11.56 0.10 30.94 30.96 9.3 9.27 e F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.77 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 10-02-02 11-02-17 SOT539B Fig 11. Package outline SOT539B BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 16 September 2011 (c) NXP B.V. 2011. All rights reserved. 9 of 13 NXP Semiconductors BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function DVB-T Digital Video Broadcast - Terrestrial DVB Digital Video Broadcast ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor OFDM Orthogonal Frequency Division Multiplexing PAR Peak-to-Average power Ratio RF Radio Frequency SMD Surface Mounted Device TTF Time To Failure VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date BLF6G15L-500H_6G15LS-500H v.2 20110916 Modifications: * Data sheet status Change notice Supersedes Product data sheet - BLF6G15L-500H_6G 15LS-500H v.1 The status of this data sheet has been changed to Product data sheet BLF6G15L-500H_6G15LS-500H v.1 20110511 Objective data sheet BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 16 September 2011 - - (c) NXP B.V. 2011. All rights reserved. 10 of 13 NXP Semiconductors BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 16 September 2011 (c) NXP B.V. 2011. All rights reserved. 11 of 13 NXP Semiconductors BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. 12.4 Licenses ICs with DVB-T or DVB-T2 functionality Use of this product in any manner that complies with the DVB-T or the DVB-T2 standard may require licenses under applicable patents of the DVB-T respectively the DVB-T2 patent portfolio, which license is available from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under applicable patents of other parties. 12.5 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 16 September 2011 (c) NXP B.V. 2011. All rights reserved. 12 of 13 NXP Semiconductors BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.2.1 7.2.2 7.2.3 7.3 8 9 10 11 12 12.1 12.2 12.3 12.4 12.5 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 September 2011 Document identifier: BLF6G15L-500H_6G15LS-500H