RQK0301FGDQS Silicon N Channel MOS FET Power Switching REJ03G1269-0300 Rev.3.00 Jun 22, 2006 Features * Low on-resistance RDS(on) = 28 m typ (VGS = 10 V, ID = 3 A) * Low drive current * High speed switching * 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 2, 4 D 2 1 3 1. Gate 2. Drain 3. Source 4. Drain 1G 4 S 3 Note: Marking is "FG". *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Symbol VDSS VGSS ID Drain peak current ID (pulse)Note1 Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel dissipation Pch (pulse)Note1 Channel temperature Tch Storage temperature Tstg Notes: 1. PW 1 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Rev.3.00 Jun 22, 2006 page 1 of 6 Ratings 30 20 6 Unit V V A 8.8 6 1.5 5 150 -55 to +150 A A W W C C RQK0301FGDQS Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Min 30 20 -- -- 1.0 Typ -- -- -- -- -- Max -- -- 10 1 2.0 Unit V V A A V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA Drain to source on state resistance RDS(on) -- 28 35 m ID = 3 A, VGS = 10 VNote3 RDS(on) -- 35 49 m ID = 3 A, VGS = 4.5 VNote3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg 6.9 -- -- -- -- -- -- -- -- 11.5 750 112 61 13 39 51 4.0 12 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns nC ID = 3 A, VDS = 10 VNote3 Gate to Source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Qgs Qgd VDF -- -- -- 1.8 2.1 0.75 -- -- -- nC nC V Rev.3.00 Jun 22, 2006 page 2 of 6 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, VGS = 10 V, RL = 10 , Rg = 4.7 VDD = 10 V, VGS = 10 V, ID = 6 A IF = 1.5 A, VGS = 0Note3 RQK0301FGDQS Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area 1.5 1m s =1 s 0m 1 O tio ra pe n 0.5 100 s 10 PW 1.0 Operation in this area is limited by RDS(on) C Drain Current ID (A) 100 D Channel Dissipation Pch (W) 2.0 0.1 Ta = 25C 1 Shot Pulse 0.01 0.01 0 0 25 50 75 100 125 150 5 Pulse Test Tc = 25C Drain Current ID (A) Drain Current ID (A) 2.6 V 10 V 3 2.4 V 2 2.2 V 1 VGS = 0 V 0 0 1 100 6 2.8 V 3V 5V 4V 8V 4 10 Typical Transfer Characteristics (1) Typical Output Characteristics 5 1 Drain to Source Voltage VDS (V) Ambient Temperature Ta (C) *When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) 6 0.1 2 3 VDS = 5 V Pulse Test 4 3 Tc = 75C 2 25C 1 -25C 2V 4 0 0 5 Drain to Source Voltage VDS (V) 3 2 1 4 Gate to Source Voltage VGS (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Drain Current ID (A) VDS = 5 V Pulse Test 0.1 0.01 Tc = 75C 25C -25C 0.001 0.0001 0 1 2 3 Gate to Source Voltage VGS (V) Rev.3.00 Jun 22, 2006 page 3 of 6 4 Gate to Source Cutoff Voltage VGS(off) (V) 1 Case Temperature 10 ID = 10 mA 1 100 A 1 mA VDS = 10 V Pulse Test 0.1 -25 0 25 50 75 100 125 Case Temperature Tc (C) 150 0.3 Pulse Test Tc = 25C 0.2 ID = 3 A 2A 1.5 A 0.1 1A 0.5 A 0 0 2 4 6 8 10 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) () Drain to Source Saturation Voltage vs. Gate to Source Voltage 100 VGS = 4.5 V 10 V 10 Pulse Test Tc = 25C 1 0.1 1 10 100 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature 60 ID = 3 A Pulse Test VGS = 4.5 V 2A 1.5 A 50 1A 0.5 A 40 30 20 -25 0 25 50 75 100 125 150 50 ID = 3 A Pulse Test VGS = 10 V 2A 1.5 A 40 1A 0.5 A 30 20 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) Case Temperature Tc (C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature 100 10000 Pulse Test VDS = 10 V -25C 10 25C Tc = 75C 1 0.1 0.1 Drain to Source on State Resistance RDS(on) (m) Gate to Source Voltage VGS (V) Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (m) Drain to Source Saturation Voltage VDS(on) (V) RQK0301FGDQS 1 10 Drain Current ID (A) Rev.3.00 Jun 22, 2006 page 4 of 6 100 Pulse Test VGS = 0 V VDS = 30 V 1000 100 10 1 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) RQK0301FGDQS Switching Characteristics 20 ID = 6.0 A Tc = 25C 80 16 VDD =10 V 60 VGS 12 20 V 40 8 VDS 20 4 VDD = 20 V 10 V 0 0 4 8 12 0 20 16 1000 tf Switching Time t (ns) 100 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics td(on) 10 tr 0.1 10 1.0 Gate Charge Qg (nC) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 1150 Ciss Ciss (pF) 1100 Coss 100 1050 1000 950 Crss 10 900 VGS = 0 V f = 1 MHz 0 10 20 10 Body-Drain Diode Forward Voltage vs. Case Temperature Pulse Test Tc = 25C 5V 3 2 0V -5 V, -10 V 0 5 Reverse Drain Current vs. Source to Drain Voltage 4 0 0 Gate to Source Voltage VGS (V) VGS = 10 V 1 -5 Drain to Source Voltage VDS (V) 6 5 VDS = 0 V f = 1 MHz 850 -10 30 0.4 0.8 1.2 1.6 Source Drain Voltage VSD (V) Rev.3.00 Jun 22, 2006 page 5 of 6 2.0 Body-Drain Diode Forward Voltage VSDF (V) Ciss, Coss, Crss (pF) td(off) 100 1 0.01 1000 Reverse Drain Current IDR (A) VDD = 10 V VGS = 10 V Rg = 4.7 PW = 5 s Tc = 25C 0.8 VGS = 0 0.6 ID = 10 mA 0.4 1 mA 0.2 -25 0 25 50 75 100 125 Case Temperature Tc (C) 150 RQK0301FGDQS Package Dimensions 1.5 1.5 3.0 MASS[Typ.] 0.050g 1.5 0.1 0.44 Max 2.5 0.1 4.25 Max 0.53 Max 0.48 Max 0.8 Min 1 0.4 4.5 0.1 1.8 Max Previous Code UPAK / UPAKV Unit: mm (1.5) 0.44 Max (0.2) RENESAS Code PLZZ0004CA-A (2.5) JEITA Package Code SC-62 (0.4) Package Name UPAK Ordering Information Part Name RQK0301FGDQSTL-E Quantity 1000 pcs. Rev.3.00 Jun 22, 2006 page 6 of 6 Shipping Container 178 reel, 12 mm Emboss taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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