VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 6000 3000 24 1.70 0.60 3800 V A kA V Gate turn-off Thyristor 5SGT 30J6004 m V Doc. No. 5SYA 1212-04 Aug. 2000 * Patented free-floating silicon technology * Low on-state and switching losses * Annular gate electrode * Industry standard housing * Cosmic radiation withstand rating The 5SGT 30J6004 is an 85 mm buffered layer, Transparent Emitter (non-shorted anode) GTO with exceptionally low dynamic and static losses and gate drive requirements. Housed in an industry-standard 108 mm wide housing, it is ideally suited for high reliability applications such as Transportation and Medium Voltage Drives. Blocking VGR 2V VDRM Repetitive peak off-state voltage 6000 V VRRM Repetitive peak reverse voltage 17 V IDRM Repetitive peak off-state current 100 mA VD = VDRM VGR 2V IRRM Repetitive peak reverse current 50 mA VR = VRRM RGK = VDClink Permanent DC voltage for 100 3800 V FIT failure rate -40 Tj 110 C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 19) Fm Mounting force A min. 36 kN max. 44 kN Acceleration: Device unclamped Device clamped 50 m/s2 200 m/s2 M Weight 1.3 kg DS Surface creepage distance 33 mm Da Air strike distance 15 mm ABB Semiconductors AG reserves the right to change specifications without notice. 5SGT 30J6004 GTO Data On-state ITAVM Max. average on-state current 1030 A ITRMS Max. RMS on-state current 1620 A ITSM Max. peak non-repetitive 24 kA tP = 10 ms surge current 40 kA tP = 1 ms After surge: 2 2.88106 A s tP = 10 ms VD = VR = 0V 2 0.80106 A s tP = 1 ms 3000 A I2t Limiting load integral Half sine wave, TC = 70 C VT On-state voltage 3.50 V IT = VT0 Threshold voltage 1.70 V IT = 400 - 4000 A rT Slope resistance 0.60 m IH Holding current 100 A Tj = 25 C VGT Gate trigger voltage 1.2 V VD = 24 V IGT Gate trigger current 1.0 A RA = 0.1 VGRM Repetitive peak reverse voltage 17 V IGRM Repetitive peak reverse current 20 mA VGR = VGRM Tj = Tj = 110C 110 C Gate Tj = 25 C Turn-on switching di/dtcrit Max. rate of rise of on-state 400 A/s f = 200Hz IT = 3000 A, current 800 A/s f = 1Hz IGM = 25 A, diG/dt = 25 A/s td Delay time 2.5 s VD = tr Rise time 5.0 s IT ton(min) Min. on-time Eon Turn-on energy per pulse 0.5 VDRM Tj Tj = 110 C = 110 C = 3000 A di/dt = 300 A/s 100 s IGM = 25 A diG/dt = 25 A/s 2.50 Ws CS = RS 10 3000 A VDM = VDRM 3 F = Turn-off switching ITGQM Max controllable turn-off current diGQ/dt = 70 A/s CS = 3 F LS 0.2 H 25.0 s VD = 1/2 VDRM VDM = VDRM Tj = ts Storage time tf Fall time 3.0 s toff(min) Min. off-time 100 s ITGQ = ITGQM Eoff Turn-off energy per pulse 16.0 Ws CS = IGQM Peak turn-off gate current 900 A LS 110 C diGQ/dt = 3 F RS = 70 A/s 10 0.2 H ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1212-04 Aug. 2000 page 2 of 9 5SGT 30J6004 Thermal Tj Storage and operating -40...110C junction temperature range RthJC RthCH Thermal resistance 22 K/kW Anode side cooled junction to case 27 K/kW Cathode side cooled 12 K/kW Double side cooled Thermal resistance case to 6 K/kW Single side cooled heat sink 3 K/kW Double side cooled Analytical function for transient thermal impedance: 4 Z thJC (t) = R (1 - e i i=1 Fig. 1 - t / i ) i 1 2 3 4 RI (K/kW) 5.4 4.5 1.7 0.4 i (s) 1.2 0.17 0.01 0.001 Transient thermal impedance, junction to case. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1212-04 Aug. 2000 page 3 of 9 5SGT 30J6004 Fig. 2 On-state characteristics Fig. 4 Surge current and fusing integral vs. pulse width Fig. 3 Average on-state power dissipation vs. average on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1212-04 Aug. 2000 page 4 of 9 5SGT 30J6004 Fig. 5 Forward blocking voltage vs. gate-cathode resistance. Fig. 7 Forwarde gate current vs. forard gate voltage. Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance. Fig. 8 Gate trigger current vs. junction temperature ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1212-04 Aug. 2000 page 5 of 9 5SGT 30J6004 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state current and current rise rate Common Test conditions for figures 9, 10 and 11: diG/dt CS = 25 A/s = 3 F RS = 10 Tj = 110 C Definition of Turn-on energy: 20 s E on = V D ITdt (t = 0, IG = 0.1 IGM ) 0 Common Test conditions for figures 12, 13 and 15: Definition of Turn-off energy: E off = 40 s V D ITdt ( t = 0, IT = 0.9 ITGQ ) 0 Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1212-04 Aug. 2000 page 6 of 9 5SGT 30J6004 Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current. Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance. Fig. 14 Required snubber capacitor vs. max allowable turn-off current. Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate. Fig. 17 Storage time and peak turn-off gate current vs. turn-off current ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1212-04 Aug. 2000 page 7 of 9 5SGT 30J6004 Fig. 18 General current and voltage waveforms with GTO-specific symbols Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1212-04 Aug. 2000 page 8 of 9 5SGT 30J6004 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 s and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10... 15 V. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 2 CH-5600 Lenzburg, Switzerland Tel: Fax: E-mail Internet +41 (0)62 888 6419 +41 (0)62 888 6306 info@ch.abb.com www.abbsem.com Doc. No. 5SYA 1212-04 Aug. 2000