5SGT 30J6004 - ABB Semiconductors

ABB Semiconductors AG reserves the right to change specifications without notice.

VDRM = 6000 V

ITGQM = 3000 A

ITSM =24kA

VT0 =1.70V

rT=0.60

mΩ

VDClin = 3800 V

Gate turn-off Thyristor

5SGT 30J6004

Doc. No. 5SYA 1212-04 Aug. 2000

• Patented free-floating silicon technology

• Low on-state and switching losses

• Annular gate electrode

• Industry standard housing

• Cosmic radiation withstand rating

The 5SGT 30J6004 is an 85 mm buffered layer, Transparent Emitter (non-shorted anode)

GTO with exceptionally low dynamic and static losses and gate drive requirements.

Housed in an industry-standard 108 mm wide housing, it is ideally suited for high reliability

applications such as Transportation and Medium Voltage Drives.

Blocking

VDRM Repetitive peak off- stat e voltage 6000 V VGR ≥ 2V

VRRM Repetitive peak revers e voltage 17 V

IDRM Repetitive peak off-state current ≤100 mA VD = VDRM VGR ≥ 2V

IRRM Repetitive peak reverse current ≤50 mA VR = VRRM RGK = ∞

VDClink Permanent DC voltage for 100

FIT fa ilu re ra te 3800 V -40 ≤ Tj ≤ 110 °C. Ambient cosmic

radiation at sea level in open air.

Mechanical data (see Fig. 19) min. 36 kN

FmMounting force max. 44 kN

AAcceleration:

Device unclamped

Device clamped 50

200 m/s2

m/s2

MWeight 1.3 kg

DSSurface creepage distance ≥33 mm

DaAir strike distance ≥15 mm

5SGT 30J6004

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1212-04 Aug. 2000 page 2 of 9

GTO Data

On-state

ITAVM Max. average on-state current 1030 A Half sine wave, TC = 70 °C

ITRMS Max. RMS on-state current 1620 A

ITSM 24 kA tP=10msT

j = 110°CMax. peak non-repetitive

surge current 40 kA tP= 1 ms Afte r surge:

I2t Limiting load int egral 2.88⋅106A2st

P=10msV

D = VR = 0V

0.80⋅106A2st

P=1ms

VTOn-state voltage 3.50 V IT= 3000 A

VT0 Threshold voltage 1.70 V IT= 400 - 4000 A Tj = 110 °C

rTSlope resistance 0.60 mΩ

IHHolding current 100 A Tj=25 °C

Gate

VGT Gate trigger voltage 1.2 V VD= 24 V Tj = 25 °C

IGT Gate trigger current 1.0 A RA=0.1 Ω

VGRM Repetit ive peak reverse voltag e 17 V

IGRM Repetitive peak reverse current 20 mA VGR =V

GRM

Turn-on sw itching

di/dtcrit Max. rate of rise of on-state 400 A/µ s f = 200Hz I T = 3000 A, Tj = 110 °C

curren t 800 A/µs f = 1Hz IGM = 25 A, diG/dt = 25 A/µs

tdDelay time 2.5 µs VD=0.5V

DRM Tj= 110 °C

trRise time 5.0 µs IT= 3000 A di/dt = 300 A/µs

ton(min) Min. on-t ime 100 µs IGM =25Adi

G/dt = 25 A/µs

Eon Turn-on energy per pulse 2.50 Ws CS=3µFR

S=10

Ω

Turn-off switching 3000 A VDM =V

DRM diGQ/dt = 70 A/µsITGQM Max controllable turn-off

current CS=3 µF L

S≤0.2 µH

tsStorage time 25.0 µs VD=½VDRM VDM =V

DRM

tfFall time 3.0 µ s Tj=110°Cdi

GQ/dt = 70 A/µs

toff(min) Min. off-time 100 µs ITGQ =I

TGQM

Eoff Turn-off energy per pulse 16.0 W s CS=3µFR

S=10

Ω

IGQM Peak turn-off gate current 900 A LS≤0.2 µH

5SGT 30J6004

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1212-04 Aug. 2000 page 3 of 9

Thermal

TjStorage and operating -40...110°C

junction temperature range

RthJC Thermal resistance 22 K/kW Anode side cooled

junction to case 27 K/kW Cathode side cooled

12 K/kW Double side cooled

RthCH Thermal resistance case to 6 K/kW Sing le side cooled

heat sink 3 K/kW Double side cooled

i1234

RI (K/kW ) 5.4 4.5 1.7 0.4

Anal ytical f unction for transient thermal

impedance:

)e-(1R = (t)Z 4

/t-

thJC i

∑

τi (s) 1.2 0.17 0.01 0.001

Fig. 1 Transient thermal impedance, junction to case.

5SGT 30J6004

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1212-04 Aug. 2000 page 4 of 9

Fig. 2 On-state characteristics Fig. 3 Average on-state power dissipation vs.

average on-state current.

Fig. 4 Surge current and fusing integral vs. pulse

width

5SGT 30J6004

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1212-04 Aug. 2000 page 5 of 9

Fig. 5 Forward blocking voltage vs. gate-cathode

resistance. Fig. 6 Static dv/dt capability: Forward blocking

voltage vs. neg. gate voltage or gate

cathode resistance.

Fig. 7 Forward e ga te cu rren t v s . fo rard gate

voltage. Fig. 8 Gate trigger current vs. junction

temperature

5SGT 30J6004

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1212-04 Aug. 2000 page 6 of 9

Fig. 9 Turn-on energy per pulse vs. on-state

current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state

current and current rise rate

Common Test conditions for figures 9, 10 and 11:

diG/dt = 25 A/µs

CS = 3 µF

RS = 10 Ω

Tj = 110 °C

Definition of Turn-on energy:

)0.1 I 0, (t G

GMT

Don IdtIVE ⋅==⋅= ∫

Common Test conditions for figures 12, 13 and 15:

Definition of Turn-off energy:

)0.9 I 0, t ( T

TGQT

Doff IdtIVE ⋅==⋅= ∫

Fig. 11 Turn-on energy per pulse vs. on-state

current and turn-on voltage.

5SGT 30J6004

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1212-04 Aug. 2000 page 7 of 9

Fig. 12 Turn-off energy per pulse vs. turn-off current

and peak turn-off voltage. Extracted gate

charge vs. turn-off current.

Fig. 13 Turn-off energy per pulse vs. turn-off

current and snubber capacitance.

Fig. 14 Requir ed snubber capacitor vs. max

allowable turn-off current. Fig. 15 Turn-off energy per pulse, storage time

and peak turn-off gate current vs. junction

temperature

Fig. 16 Storage time and peak turn-off gate current

vs. neg. gate current rise rate. Fig. 17 Storage time and peak turn-off gate

current vs. turn-off current

5SGT 30J6004

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1212-04 Aug. 2000 page 8 of 9

Fig. 18 General current and voltage waveforms with GTO- specif ic symbols

Fig. 19 Outline drawing. All dimensions are in

millimeter s and represent nominal values

unless stated otherwise.

5SGT 30J6004

ABB Semiconductors AG reserves the right to change specifications without notice.

ABB Semiconductors AG Doc. No. 5SYA 1212-04 Aug. 2000

Fabri kstra sse 2

CH-5600 Lenzburg, Switzerland

Tel: +41 (0)62 888 641 9

Fax: +41 (0)62 888 630 6

E-mail info@ch.abb.com

Internet www.abbsem.com

Reverse avalanche capability

In operation with an antiparallel freewheeling diode, the GTO reverse voltag e VR may exceed the rate

value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then

driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time

and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative

during this time. Recommendation : VGR = 10… 15 V.