
5SGT 30J6004
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1212-04 Aug. 2000 page 2 of 9
GTO Data
On-state
ITAVM Max. average on-state current 1030 A Half sine wave, TC = 70 °C
ITRMS Max. RMS on-state current 1620 A
ITSM 24 kA tP=10msT
j = 110°CMax. peak non-repetitive
surge current 40 kA tP= 1 ms Afte r surge:
I2t Limiting load int egral 2.88⋅106A2st
P=10msV
D = VR = 0V
0.80⋅106A2st
P=1ms
VTOn-state voltage 3.50 V IT= 3000 A
VT0 Threshold voltage 1.70 V IT= 400 - 4000 A Tj = 110 °C
rTSlope resistance 0.60 mΩ
IHHolding current 100 A Tj=25 °C
Gate
VGT Gate trigger voltage 1.2 V VD= 24 V Tj = 25 °C
IGT Gate trigger current 1.0 A RA=0.1 Ω
VGRM Repetit ive peak reverse voltag e 17 V
IGRM Repetitive peak reverse current 20 mA VGR =V
GRM
Turn-on sw itching
di/dtcrit Max. rate of rise of on-state 400 A/µ s f = 200Hz I T = 3000 A, Tj = 110 °C
curren t 800 A/µs f = 1Hz IGM = 25 A, diG/dt = 25 A/µs
tdDelay time 2.5 µs VD=0.5V
DRM Tj= 110 °C
trRise time 5.0 µs IT= 3000 A di/dt = 300 A/µs
ton(min) Min. on-t ime 100 µs IGM =25Adi
G/dt = 25 A/µs
Eon Turn-on energy per pulse 2.50 Ws CS=3µFR
S=10
Ω
Turn-off switching 3000 A VDM =V
DRM diGQ/dt = 70 A/µsITGQM Max controllable turn-off
current CS=3 µF L
S≤0.2 µH
tsStorage time 25.0 µs VD=½VDRM VDM =V
DRM
tfFall time 3.0 µ s Tj=110°Cdi
GQ/dt = 70 A/µs
toff(min) Min. off-time 100 µs ITGQ =I
TGQM
Eoff Turn-off energy per pulse 16.0 W s CS=3µFR
S=10
Ω
IGQM Peak turn-off gate current 900 A LS≤0.2 µH