Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Surface Mount
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θA
Continuous
70°C
(A) @ T = 25°C
A
P Max.
D
I I
Drain Current
Micro3™ (SOT-23)
International
Rectifier
DD
Logic Level
N-Channel
IRLML2402* 9125734020 0.25 0.93 0.74 370
IRLML2803 9125834030 0.25 0.91 0.73 370
Logic Level
P-Channel
IRLML5103 91260280-30 0.6 -0.6 -0.48 370
IRLML6302* 91259280-20 0.6 -0.61 -0.49 370
* Indicates low VGS(th), which can operate at VGS= 2.75V
Page 1
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Surface Mount
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
Micro6™
International
Rectifier
DD
Logic Level
N-Channel
IRLMS1503 9150878030 0.1 2.2 1.8 160
IRLMS1902* 9154078020 0.1 2.2 1.8 160
Logic Level
P-Channel
IRLMS5703 91413780-30 0.2 -1.6 -1.3 75
IRLMS6702* 91414780-20 0.2 -1.6 -1.3 160
* Indicates low VGS(th), which can operate at VGS= 2.75V
Page 2
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Surface Mount
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θA
Continuous
70°C
(A) @ T = 25°C
A
P Max.
D
I I
Drain Current
Micro8™
International
Rectifier
DD
Logic Level
N-Channel
IRF7601* 9126178020 0.035 3.8 3 160
IRF7603 9126278030 0.035 3.7 3 160
Logic Level
Dual N-Channel
IRF7501* 9126562520 0.135 1.7 1.4 200
IRF7503 9126662530 0.135 1.7 1.4 200
Logic Level
P-Channel
IRF7604* 91263780-20 0.09 -2.4 -1.9 160
IRF7606 91264780-30 0.09 -2.4 -1.9 160
Logic Level
Dual P-Channel
IRF7504* 91267625-20 0.27 -1.2 -0.96 200
IRF7506 91268625-30 0.27 -1.2 -0.96 200
Logic Level
Dual N- and P-Channel
IRF7507* 9126962520 0.135 1.7 1.3 200 91269625-20 0.27 -1.2 -0.96 200
IRF7509 9127062530 0.135 1.7 1.3 200 91270625-30 0.27 -1.2 -0.96 200
* Indicates low VGS(th), which can operate at VGS = 2.75V
Page 3
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Surface Mount
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θA
Continuous
70°C
(A) @ T = 25°C
A
P Max.
D
I I
Drain Current
SO-8
International
Rectifier
DD
N-Channel
IRF7413 91330230 0.011 10 5.8 62.5
Logic Level
N-Channel
IRF7201 911001.630 0.03 7 5.6 80
IRF7401 912441.620 0.022 6.9 5.5 80
IRF7403 912451.630 0.022 6.7 5.4 80
Logic Level
Dual N-Channel
IRF7101 908711.420 0.1 3.5 2.3 90
IRF7103 910951.450 0.13 3 2.3 90
IRF7301 912381.420 0.05 4.3 3.4 90
IRF7303 912391.430 0.05 4 3.2 90
IRF7311 914351.420 0.026 5.9 4.1 0.026
IRF7313 91480230 0.029 6.5 5.2 62.5
IRF9956 91559230 0.1 3.5 2.8 62.5
Logic Level
P-Channel
IRF7204 911031.6-20 0.06 -5.3 -4.2 80
IRF7205 911041.6-30 0.07 -4.6 -3.7 80
IRF7404 912461.6-20 0.04 -5.3 -4.3 80
IRF7406 912471.6-30 0.045 -4.7 -3.8 80
IRF7416 913561-30 0.02 -8.8 -5.6 50
Page 4
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Surface Mount
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θA
Continuous
70°C
(A) @ T = 25°C
A
P Max.
D
I I
Drain Current
SO-8
International
Rectifier
DD
Logic Level
Dual P-Channel
IRF7104 910961.4-20 0.25 -2.3 -1.8 90
IRF7304 912401.4-20 0.09 -3.6 -2.9 90
IRF7306 912411.4-30 0.1 -3 -2.4 90
IRF7314 914351.4-20 0.053 -4.2 -2.9 190
IRF7316 915052-30 0.058 -4.9 -3.9 62.5
IRF9953 915602-30 0.25 -2.3 -1.8 62.5
Logic Level
Dual N- and P-Channel
IRF7105 910971.425 0.1 3.5 2.8 90 91097625-20 0.27 -1.2 -0.96 200
IRF7307 912421.420 0.05 4.3 3.4 90
912421.4-20 0.09 -4 -2.9 90
IRF7309 912431.430 0.05 4 3.2 90 912431.4-30 0.1 -3.5 -2.4 90
IRF9952 91562230 0.1 3.5 2.8 62.5 915622-30 0.25 -2.3 -1.8 62.5
Page 5
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Surface Mount
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
FETKY™ SO-8
VFM
Forward
Voltage Drop
@ Tj = 25°C
International
Rectifier
DD
FETKY (Co-packaged HEXFET Power MOSFET and Schottky Diode)
N-Channel
IRF7421D1 914112.530 0.035 4.1 3.3 50 0.50V @ 1.0A
IRF7422D2 914122.5-20 0.09 -2.9 -2.3 50 0.57V @ 3.0A
Page 6
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Surface Mount
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θA
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
SOT-223 (TO-261AA)
International
Rectifier
DD
N-Channel
IRFL014 90860260 0.2 2.7 1.7 60
IRFL110 908612100 0.54 1.5 0.96 60
IRFL210 908682200 1.5 0.96 0.6 60
IRFL214 908622250 2 0.79 0.5 60
IRFL4105 913812.155 0.045 3.7 60
IRFL4310 913682.1100 0.2 1.6 60
Logic Level
N-Channel
IRLL014N 914992.155 0.14 2.8 1.6 60
IRLL110 908693.1100 0.54 1.5 0.93 40
IRLL2705 913802.155 0.04 5.2 3 60
IRLL3303 913792.130 0.031 6.5 3.7 60
P-Channel
IRFL9014 908632-60 0.5 -1.8 -1.1 60
IRFL9110 908642-100 1.2 -1.1 -0.69 60
Page 7
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Surface Mount
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-252AA (D-Pak)
International
Rectifier
DD
N-Channel
IRFR014 907012560 0.2 7.7 4.9 5
IRFR024N 913363855 0.075 16 10 3.3
IRFR110 9052425100 0.54 4.3 2.7 5
IRFR1205 913186955 0.027 37 23 1.8
IRFR120N 9136539100 0.21 9.1 5.8 3.2
IRFR210 9052625200 1.5 2.6 1.7 5
IRFR214 9070325250 2 2.2 1.4 5
IRFR220 9052542200 0.8 4.8 3 3
IRFR224 9060042250 1.1 3.8 2.4 3
IRFR310 9059725400 3.6 1.7 1.1 5
IRFR320 9059842400 1.8 3.1 2 3
IRFR3910 9136452100 0.11 15 9.5 2.4
IRFR4105 913024855 0.045 25 16 2.7
IRFR420 9059942500 3 2.4 1.5 3
IRFRC20 9063742600 4.4 2 1.3 3
Logic Level
N-Channel
IRLR014 906242560 0.2 7.7 4.9 5
IRLR024N 913633855 0.065 17 11 3.3
IRLR110 9063325100 0.54 4.3 2.7 5
IRLR120 9063642100 0.27 7.7 4.9 3
Page 8
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Surface Mount
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-252AA (D-Pak)
International
Rectifier
DD
IRLR2703 913353830 0.045 22 14 3.3
IRLR2905 913346955 0.027 36 23 1.8
IRLR3103 913336930 0.019 46 29 1.8
P-Channel
IRFR9014 9065425-60 0.5 -5.1 -3.2 5
IRFR9024 9065542-60 0.28 -8.8 -5.6 3
IRFR9110 9051925-100 1.2 -3.1 -2 5
IRFR9120 9052042-100 0.6 -5.6 -3.6 3
IRFR9210 9052125-200 3 -1.9 -1.2 5
IRFR9220 9052242-200 1.5 -3.6 -2.3 3
Logic Level
P-Channel
IRLR2705 913174655 0.04 24 15 2.7
Page 9
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Discrete
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-251AA (I-Pak)
International
Rectifier
DD
N-Channel
IRFU014 907012560 0.2 7.7 4.9 5
IRFU024N 913363855 0.075 16 10 3.3
IRFU110 9052425100 0.54 4.3 2.7 5
IRFU1205 913186955 0.027 37 23 1.8
IRFU120N 9136539100 0.21 9.1 5.8 3.2
IRFU210 9052625200 1.5 2.6 1.7 5
IRFU214 9070325250 2 2.2 1.4 5
IRFU220 9052542200 0.8 4.8 3 3
IRFU224 9060042250 1.1 3.8 2.4 3
IRFU310 9059725400 3.6 1.7 1.1 5
IRFU320 9059842400 1.8 3.1 2 3
IRFU3910 9136452100 0.11 15 9.5 2.4
IRFU4105 913024855 0.045 25 19 2.7
IRFU420 9059942500 3 2.4 1.5 3
IRFUC20 9063742600 4.4 2 1.3 3
Logic Level
N-Channel
IRLU014 906242560 0.2 7.7 4.9 5
IRLU024N 913633855 0.065 17 11 3.3
IRLU110 9063325100 0.54 4.3 2.7 5
IRLU120 9063642100 0.27 7.7 4.9 3
Page 10
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Discrete
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-251AA (I-Pak)
International
Rectifier
DD
IRLU2703 913353830 0.045 22 14 3.3
IRLU2705 913174655 0.04 24 0 15
IRLU2905 913346955 0.027 36 23 1.8
IRLU3103 913336930 0.019 46 29 1.8
P-Channel
IRFU9014 9065425-60 0.5 -5.1 -3.2 5
IRFU9024 9065542-60 0.28 -8.8 -5.6 3
IRFU9110 9051925-100 1.2 -3.1 -2 5
IRFU9120 9052042-100 0.6 -5.6 -3.6 3
IRFU9210 9052125-200 3 -1.9 -1.2 5
IRFU9220 9052242-200 1.5 -3.6 -2.3 3
Page 11
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Discrete
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
HEXDIP (HD-1)
International
Rectifier
DD
N-Channel
IRFD014 907001.360 0.2 1.7 1.2 120
IRFD024 906991.360 0.1 2.5 1.8 120
IRFD110 903281.3100 0.54 1 0.71 120
IRFD120 903851.3100 0.27 1.3 0.94 120
IRFD210 903861.3200 1.5 0.6 0.38 120
IRFD214 912711.3250 2 0.57 0.32 120
IRFD220 904171.3200 0.8 0.8 0.5 120
IRFD224 912721.3250 1.1 0.76 0.43 120
IRFD310 912251.3400 3.6 0.42 0.23 120
IRFD320 912261.3400 1.8 0.6 0.33 120
IRFD420 912271.3500 3 0.46 0.26 120
IRFDC20 912281.3600 4.4 0.32 0.21 120
Logic Level
N-Channel
IRLD014 906281.360 0.2 1.7 1.2 120
IRLD024 906291.360 0.1 2.5 1.8 120
IRLD110 906351.3100 0.54 1 0.7 120
IRLD120 906341.3100 0.27 1.3 0.94 120
P-Channel
IRFD9014 906961.3-60 0.5 -1.1 -0.8 120
IRFD9024 906981.3-60 0.28 -1.6 -1.1 120
Page 12
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Discrete
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
HEXDIP (HD-1)
International
Rectifier
DD
IRFD9110 903891.3-100 1.2 -0.7 -0.49 120
IRFD9120 903311.3-100 0.6 -1 -0.7 120
IRFD9210 903871.3-200 3 -0.4 -0.25 120
IRFD9220 904391.3-200 1.5 -0.56 -0.36 120
Page 13
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Surface Mount
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
D2Pak
International
Rectifier
DD
FETKY (Co-packaged HEXFET Power MOSFET and Schottky Diode)
N-Channel
IRL3103D1S 915583.130 0.014 54 34 1.8
N-Channel
IRF1010NS 913723.855 0.012 72 51 1.2
IRF1310NS 91514120100 0.036 36 25 1.3
IRF3205S 9130415055 0.008 98 69 1
IRF3415S 91509150150 0.042 37 26 1
IRF3710S 91310150100 0.028 46 33 1
IRF510S 9089543100 0.54 5.6 4 3.5
IRF520NS 9134047100 0.2 9.5 6.7 3.2
IRF530NS 9135263100 0.11 15 11 2.4
IRF530S 9089788100 0.16 14 10 1.7
IRF540NS 91342110100 0.052 27 19 1.6
IRF540S 90898150100 0.077 28 20 1
IRF610S 9089936200 1.5 3.3 2.1 3.5
IRF614S 9100336250 2 2.7 1.7 3.5
IRF620S 9090050200 0.8 5.2 3.3 2.5
IRF624S 9100450250 1.1 4.4 2.8 2.5
IRF630S 9090174200 0.4 9 5.7 1.7
IRF634S 9100574250 0.45 8.1 5.1 1.7
IRF640S 90902125200 0.18 18 11 1
Page 14
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Surface Mount
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
D2Pak
International
Rectifier
DD
IRF644S 91006125250 0.28 14 8.5 1
IRF710S 9100736400 3.6 2 1.2 3.5
IRF720S 9100850400 1.8 3.3 2.1 2.5
IRF730S 9100974400 1 5.5 3.3 1.7
IRF740S 91010125400 0.55 10 6.3 1
IRF820S 9101150500 3 2.5 1.6 2.5
IRF830S 9101274500 1.5 4.5 2.9 1.7
IRF840S 91013125500 0.85 8 5.1 1
IRFZ14S 908904360 0.2 10 7.2 3.5
IRFZ24NS 913554555 0.07 17 12 3.3
IRFZ24S 908916060 0.1 17 12 2.5
IRFZ34NS 913115655 0.04 26 18 2.7
IRFZ34S 908928860 0.05 30 21 1.7
IRFZ44N 913038355 0.024 41 29 1.8
IRFZ44NS 9131515060 0.028 50 36 1
IRFZ44S 9089315060 0.028 50 36 1
IRFZ46NS 913058855 0.02 46 33 1.7
IRFZ46S 9092215050 0.024 50 38 1
IRFZ48NS 914083.860 0.016 53 37 1.6
IRFZ48S 9089419060 0.018 50 50 0.8
IRL2505S 913262.155 0.008 90 64 1
IRL2703S 9136013030 0.04 24 17 3.3
Page 15
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Surface Mount
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
D2Pak
International
Rectifier
DD
IRL530NS 9134963100 0.1 15 11 2.4
IRL620S 9121850200 0.8 5.2 3.3 2.5
Logic Level
N-Channel
IRL2203NS 9136713030 0.007 100 71 1.2
IRL3103S 913388330 0.014 56 40 1.8
IRL3303S 913235630 0.026 34 24 2.7
IRL3705NS 915023.855 0.01 77 54 1.2
IRL3803S 9131915030 0.006 120 83 1
IRL510S 9090743100 0.54 5.6 4 3.5
IRL520S 9089660100 0.27 9.2 6.5 2.5
IRL530S 9090988100 0.16 15 10 1.7
IRLZ14S 909034360 0.2 10 7.2 3.5
IRLZ24NS 913584555 0.06 18 13 3.3
IRLZ24S 909046060 0.1 17 12 2.5
IRLZ34NS 913085655 0.035 27 19 2.7
IRLZ34S 909058860 0.05 30 21 1.7
IRLZ44NS 913478355 0.022 41 29 1.8
IRLZ44S 9090615060 0.028 50 36 1
P-Channel
IRF4905S 91478150-55 0.02 -64 -45 1
IRF5210S 91405150-100 0.06 -35 -25 1
Page 16
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Surface Mount
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
D2Pak
International
Rectifier
DD
IRF9510S 9091443-100 1.2 -4 -2.8 3.5
IRF9520S 9091560-100 0.6 -6.8 -4.8 2.5
IRF9530S 9091688-100 0.3 -12 -8.2 1.7
IRF9540S 90917150-100 0.2 -19 -13 1
IRF9610S 9091820-200 3 -1.8 -1 6.4
IRF9620S 9091940-200 1.5 -2.5 -2 3.1
IRF9630S 9092074-200 0.8 -6.5 -4 1.7
IRF9640S 90921125-200 0.5 -11 -6.8 1
IRF9Z14S 9091143-60 0.5 -6.7 -4.7 3.5
Page 17
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Discrete
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Q Total
0
(nC) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-220AB
Qg Total Gate
Charge (nC)
International
Rectifier
DD
Low Charge
N-Channel
IRF737LC 9131474300 0.75 6.1 1.7 3.9
IRF740LC 91068125400 0.55 10 1 39
IRF840LC 91069125500 0.85 8 1 39
IRFBC40LC 91070125600 1.2 6.2 1 39
Page 18
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Discrete
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-220AB
International
Rectifier
DD
FETKY (Co-packaged HEXFET Power MOSFET and Schottky Diode)
N-Channel
IRL3103D1 91608230 0.014 54 34 1.8
N-Channel
IRF1010N 9127813055 0.012 72 51 1.2
IRF1310N 91611120100 0.036 36 25 1.3
IRF3205 9127915055 0.008 98 69 1
IRF3415 91477150150 0.042 37 26 1
IRF3710 91309150100 0.028 46 33 1
IRF510 9032543100 0.54 5.6 4 3.5
IRF520N 9133947100 0.2 9.5 6.7 9.5
IRF530N 9135160100 0.11 15 11 2.4
IRF540N 9134194100 0.052 27 19 1.6
IRF610 9032636200 1.5 3.3 2.1 3.5
IRF614 9047536250 2 2.7 1.7 3.5
IRF620 9031750200 0.8 5.2 3.3 2.5
IRF624 9047250250 1.1 4.4 2.8 2.5
IRF630 9030974200 0.4 9 5.7 1.7
IRF634 9047674250 0.45 8.1 5.1 1.7
IRF640 90374125200 0.18 18 11 1
IRF644 90527125250 0.28 14 8.5 1
IRF710 9032736400 3.6 2 1.2 3.5
Page 19
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Discrete
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-220AB
International
Rectifier
DD
IRF720 9031550400 1.8 3.3 2.1 2.5
IRF730 9030874400 1 5.5 3.3 1.7
IRF734 9099974450 1.2 4.9 3.1 1.7
IRF740 90375125400 0.55 10 6.3 1
IRF744 91000125450 0.63 8.8 5.6 1
IRF820 9032450500 3 2.5 1.6 2.5
IRF830 9031174500 1.5 4.5 2.9 1.7
IRF840 90376125500 0.85 8 5.1 1
IRFBC20 9062350600 4.4 2.2 1.4 2.5
IRFBC30 9048274600 2.2 3.6 2.3 1.7
IRFBC40 90506125600 1.2 6.2 3.9 1
IRFBE20 9061054800 6.5 1.8 1.2 2.3
IRFBE30 90613125800 3 4.1 2.6 2
IRFBF20 9060754900 8 1.7 1.1 2.3
IRFBF30 90616125900 3.7 3.6 2.3 1
IRFBG20 90604541000 11 1.4 0.86 2.3
IRFBG30 906201251000 5 3.1 2 1
IRFZ14 905074360 0.2 10 7.2 3.5
IRFZ24N 913544555 0.07 17 12 3.3
IRFZ34N 912765655 0.04 26 18 2.7
IRFZ46N 912778855 0.02 46 33 1.7
IRFZ48N 914069455 0.016 53 37 1.6
Page 20
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Discrete
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-220AB
International
Rectifier
DD
Logic Level
N-Channel
IRL2203N 9136613030 0.007 100 71 1.2
IRL3103 913378330 0.014 56 40 1.8
IRL3303 913225630 0.026 34 24 2.7
IRL3705N 9137013055 0.01 77 54 1.2
IRL3803 9130115030 0.006 120 83 1
IRL520N 9149447100 3.2 10 7.1 3.2
IRL530N 9134863100 0.1 15 11 2.4
IRL540N 9149594100 0.044 30 21 1.6
IRL640 91089125200 0.18 17 11 1
IRLI2203N 913784730 0.007 61 43 3.2
IRLZ14 905564360 0.2 10 7.2 3.5
IRLZ24N 913574555 0.06 18 13 3.3
IRLZ34N 913075655 0.035 27 19 2.7
IRLZ44N 913468355 0.022 41 29 1.8
P-Channel
IRF4905 91280150-55 0.02 -64 -45 1
IRF9510 9039043-100 1.2 -4 -2.8 3.5
IRF9520 9031960-100 0.6 -6.8 -4.8 2.5
IRF9530N 9148275-100 0.2 -13 -9.2 2
IRF9540N 9143794-100 0.117 -19 -13 1.6
Page 21
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Discrete
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-220AB
International
Rectifier
DD
IRF9610 9035020-200 3 -1.8 -1 6.4
IRF9620 9035140-200 1.5 -2.5 -2 3.1
IRF9630 9035274-200 0.8 -6.5 -4 1.7
IRF9640 90422125-200 0.5 -11 -6.8 1
IRF9Z14 9073643-60 0.5 -6.7 -4.7 3.5
IRF9Z24N 9148445-55 0.175 -12 -8.5 3.3
IRF9Z34N 9200156-55 0.1 -17 -12 2.7
Page 22
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Fully Isolated
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Q Total
0
(nC) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-220 FullPak
Qg Total Gate
Charge (nC)
International
Rectifier
DD
Low Charge
N-Channel
IRFI740GLC 9120940400 0.55 6 3.1 39
IRFI840GLC 9120840500 0.85 4.8 3.1 39
IRFIBC40GLC 9121140600 1.2 4 3.1 39
Page 23
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Fully Isolated
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-220 Full-Pak
International
Rectifier
DD
N-Channel
IRFI1010N 913734755 0.012 44 31 3.2
IRFI1310N 9161145100 0.036 22 16 3.3
IRFI3205 913744855 0.008 56 40 3.1
IRFI510G 9082927100 0.54 4.5 3.2 5.5
IRFI520N 9136227100 0.2 7.2 5.1 5.5
IRFI530N 9135333100 0.11 11 7.8 4.5
IRFI540N 9136142100 0.052 18 13 3.6
IRFI614G 9083123250 2 2.1 1.3 5.5
IRFI620G 9083230200 0.8 4.1 2.6 4.1
IRFI624G 9083330250 1.1 3.4 2.2 4.1
IRFI630G 9065232200 0.4 5.9 3.7 3.6
IRFI634G 9073832250 0.45 5.6 3.5 3.6
IRFI640G 9064940200 0.18 9.8 6.2 3.1
IRFI644G 9073940250 0.28 7.9 5 3.1
IRFI720G 9083430400 1.8 2.6 1.7 4.1
IRFI730G 9065032400 1 3.7 2.3 3.6
IRFI734G 9100135450 1.2 3.4 2.1 3.6
IRFI740G 9065140400 0.55 5.4 3.4 3.1
IRFI744G 9100240450 0.63 4.9 3.1 3.1
IRFI820G 9064130500 3 2.1 1.3 4.1
Page 24
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Fully Isolated
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-220 FullPak
International
Rectifier
DD
IRFI830G 9064632500 1.5 3.1 2 3.6
IRFI840G 9064240500 0.85 4.6 2.9 3.1
IRFIBC20G 9085030600 4.4 1.7 1.1 4.1
IRFIBC30G 9085135600 2.2 2.5 1.6 3.6
IRFIBC40G 9085240600 1.2 3.5 2.2 3.1
IRFIBE20G 9085330800 6.5 1.4 0.86 4.1
IRFIBE30G 9085435800 3 2.1 1.4 3.6
IRFIBF20G 9085530900 8 1.2 0.79 4.1
IRFIBF30G 9085635900 3.7 1.9 1.2 3.6
IRFIZ14G 908592760 0.2 8 5.7 5.5
IRFIZ24N 915012655 0.07 13 9.2 5.8
IRFIZ34N 914893155 0.04 19 13 4.8
IRFIZ44N 914033855 0.024 28 20 0.024
IRFIZ46N 913064055 0.02 31 22 3.8
IRFIZ48N 914074255 0.016 36 25 3.6
Logic Level
N-Channel
IRLI3705N 913694755 0.01 47 33 3.2
IRLI3803 913204830 0.006 67 47 3.1
IRLI520N 9149627100 0.18 7.7 5.4 5.5
IRLI530G 9084442100 0.16 9.7 6.9 3.6
IRLI540N 9149742100 0.044 20 14 3.6
Page 25
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Fully Isolated
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-220 FullPak
International
Rectifier
DD
IRLI620G 9123530200 0.8 4.1 2.6 4.1
IRLI630G 9123632200 0.4 5.9 3.7 3.6
IRLI640G 9123740200 0.18 9.8 6.2 3.1
IRLIZ14G 908462760 0.2 8 5.7 5.5
IRLIZ24G 908473760 0.1 14 10 4.1
IRLIZ24N 913442655 0.06 14 9.9 5.8
IRLIZ34N 913293155 0.035 20 14 4.8
IRLIZ44N 914983855 0.022 28 20 4
P-Channel
IRFI9540G 9083742-100 0.117 -13 -9.2 3.6
IRFI9540N 9148742-100 0.117 -13 -9.2 3.6
IRFI9634G 9148835-250 1 -4.1 -2.6 3.6
Logic Level
P-Channel
IRFI9520G 9083537-100 0.6 -5.2 -3.6 4.1
IRFI9530G 9083638-100 0.03 -7.7 -5.4 3.6
IRFI9620G 9087430-200 1.5 -3 -1.9 4.1
IRFI9630G 9083840-200 0.8 -4.3 -2.7 3.6
IRFI9640G 9083940-200 0.5 -6.1 -3.9 3.1
IRFI9Z14G 9084027-60 0.5 -5.3 -3.8 5.5
IRFI9Z24G 9084137-60 0.285 -8.5 -6 4.1
IRFI9Z34G 9084238-60 0.14 -12 8.5 3.6
Page 26
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
HEXSENSE
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-220 Hexsense
Nominal
Sense
Number
International
Rectifier
DD
N-Channel
IRC530 9045488100 0.16 14 10 1.7 1540
IRC540 90592150100 0.077 28 20 1 2810
IRC630 9056574200 0.4 9 5.7 1.7 1570
IRC634 9056674250 0.45 8.1 5.1 1.7 1580
IRC640 90568125200 0.18 18 11 1 2880
IRC644 90569125250 0.28 14 8.5 1 2900
IRC730 9056774400 1 5.5 3.5 1 1600
IRC740 90570125400 0.55 10 6.3 1 2940
IRC830 9045574500 1.5 4.5 3 1.7 1600
IRC840 90593125500 0.85 8 5.1 1 2970
IRCZ24 906156060 0.1 17 12 2.5 820
IRCZ34 905908860 0.05 30 21 1.7 1480
IRCZ44 9052915060 0.028 50 37 1 2720
Page 28
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Discrete
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
@ T = 25°C
C
P Max.
D
I I
Drain Current
TO-247AC
Qg Total Gate
Charge (nC)
International
Rectifier
DD
Low Charge
N-Channel
IRFP350LC 91229190400 0.3 18 0.65 70
IRFP360LC 91230280400 0.2 23 0.45 98
IRFP450LC 91231190500 0.4 16 0.65 70
IRFP460LC 91232280500 0.27 20 0.45 98
IRFPC50LC 91233190600 0.6 13 0.65 70
IRFPC60LC 91234280600 0.4 16 0.45 98
Page 29
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Discrete
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-247AC
International
Rectifier
DD
N-Channel
IRFP044N 9141010055 0.02 49 35 1.5
IRFP048N 9140913055 0.016 62 44 1.2
IRFP054N 9138213055 0.012 72 51 1.2
IRFP064N 9138315055 0.008 98 69 1
IRFP140N 9134394100 0.052 27 19 1.6
IRFP150N 91503140100 0.036 39 28 1.1
IRFP240 90444150200 0.18 20 12 0.83
IRFP244 90588150250 0.28 15 9.7 0.83
IRFP250 90443190200 0.085 30 19 0.65
IRFP254 90540190250 0.14 23 15 0.65
IRFP260 90755280200 0.055 46 29 0.45
IRFP264 90756280250 0.075 38 24 0.45
IRFP340 90456150400 0.55 11 6.9 0.83
IRFP344 90998150450 0.63 9.5 6 0.83
IRFP350 90445190400 0.3 16 10 0.65
IRFP354 90995190450 0.35 14 9.1 0.65
IRFP360 90586280400 0.2 23 14 0.45
IRFP3710 91490180100 0.028 51 36 0.83
IRFP440 90457150500 0.85 8.8 5.6 0.83
IRFP448 90595180500 0.6 11 6.6 0.7
Page 30
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
Discrete
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Continuous
100°C
(A) @ T = 25°C
C
P Max.
D
I I
Drain Current
TO-247AC
International
Rectifier
DD
IRFP450 90458190500 0.4 14 8.7 0.65
IRFP460 90512280500 0.27 20 13 0.45
IRFPC30 90596100600 2.2 4.3 2.7 1.2
IRFPC40 90511150600 1.2 6.8 4.3 0.83
IRFPC48 90996170600 0.82 8.9 5.6 0.73
IRFPC50 90656180600 0.6 11 7 0.65
IRFPC60 90870280600 0.4 16 10 0.45
IRFPE30 90612125800 3 4.1 2.6 1
IRFPE40 90578150800 2 5.4 3.4 0.83
IRFPE50 90573190800 1.2 7.8 4.9 0.65
IRFPF30 90618125900 3.7 3.6 2.3 1
IRFPF40 90580150900 2.5 4.7 2.9 0.83
IRFPF50 90542190900 1.6 6.7 4.2 0.65
IRFPG30 906211251000 5 3.1 2 1
IRFPG40 905761501000 3.5 4.3 2.7 0.83
IRFPG50 905431901000 2 6.1 3.9 0.65
P-Channel
IRFP9140 90480180-100 0.2 -21 -15 0.83
IRFP9240 90481150-200 0.5 -12 -7.5 0.83
Page 31
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
HEX-Pak Module
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Pulse
100°C
(A)
P Max.
D
I I
Drain Current
M
TO-240AA
International
Rectifier
DD
Parallel Chip
N-Channel
IRFK4H054 50060 0.005 150 960 0.25
IRFK4H150 500100 0.014 145 580 0.25
IRFK4H250 500200 0.021 108 432 0.25
IRFK4H350 500400 0.075 50 200 0.25
IRFK4H450 500500 0.1 44 176 0.25
IRFK4HC50 500600 0.175 35 140 0.25
IRFK4HE50 500800 0.3 26 104 0.25
IRFK4J054 50060 0.005 150 960 0.25
IRFK4J150 500100 0.014 145 580 0.25
IRFK4J250 500200 0.021 108 432 0.25
IRFK4J350 500400 0.075 50 200 0.25
IRFK4J450 500500 0.1 44 176 0.25
IRFK4JC50 500600 0.175 35 140 0.25
IRFK4JE50 500800 0.3 26 104 0.25
IRFK6H054 62560 0.003 350 1400 0.2
IRFK6H150 625100 0.01 150 720 0.2
IRFK6H250 625200 0.015 140 560 0.2
IRFK6H350 625400 0.05 75 300 0.2
IRFK6H450 625500 0.067 66 264 0.2
IRFK6HC50 625600 0.1 48 192 0.2
Page 32
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
HEX-Pak Module
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Pulse
100°C
(A)
P Max.
D
I I
Drain Current
M
TO-240AA
International
Rectifier
DD
IRFK6J054 62560 0.003 350 1400 0.2
IRFK6J150 625100 0.01 150 720 0.2
IRFK6J250 625200 0.015 140 560 0.2
IRFK6J350 625400 0.05 75 300 0.2
IRFK6J450 625500 0.067 66 264 0.2
IRFK6JC50 625600 0.1 48 192 0.2
Page 33
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
HEX-Pak Module
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Pulse
100°C
(A)
P Max.
D
I I
Drain Current
M
TO-240AA
International
Rectifier
DD
Half Bridge
N-Channel
IRFK2D054 50060 0.01 120 480 0.25
IRFK2D150 500100 0.028 72 288 0.25
IRFK2D250 500200 0.043 54 216 0.25
IRFK2D350 500400 0.15 25 100 0.25
IRFK2D450 500500 0.2 22 88 0.25
IRFK2DC50 500600 0.35 18 72 0.25
IRFK2DE50 500800 0.6 12 48 0.25
IRFK2F054 50060 0.01 120 480 0.25
IRFK2F150 500100 0.028 72 288 0.25
IRFK2F250 500200 0.043 54 216 0.25
IRFK2F350 500400 0.15 25 100 0.25
IRFK2F450 500500 0.2 22 88 0.25
IRFK2FC50 500600 0.35 18 72 0.25
IRFK2FE50 500800 0.6 12 48 0.25
IRFK3D150 625100 0.02 125 435 0.2
IRFK3D250 625200 0.03 70 280 0.2
IRFK3D350 625400 0.1 37 148 0.2
IRFK3D450 625500 0.135 33 132 0.2
IRFK3DC50 625600 0.23 24 96 0.2
IRFK3F150 625100 0.02 125 435 0.2
Page 34
www.irf.com
Continuous
25°C
HEXFET® Power MOSFETs
Part Number Fax-on-
Demand
(A) (W)
Drain Current Power Dissipation
HEX-Pak Module
(BR)DSS
V
(V)
Drain-to-Source
Breakdown Voltage
DS(on)
R
(Ω)
On-State
Resistance (°C/W)
R
Max Thermal
Resistance
θC
Pulse
100°C
(A)
P Max.
D
I I
Drain Current
M
TO-240AA
International
Rectifier
DD
IRFK3F250 625200 0.03 70 280 0.2
IRFK3F350 625400 0.1 37 148 0.2
IRFK3F450 625500 0.135 33 132 0.2
IRFK3FC50 625600 0.23 24 96 0.2
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