PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
N
NPN General Purpose Amplifier
This device is for use as a medium power amplifier and
switch requiring collector currents up to 500 mA. Sourced
from Process 19.
Discrete POWER & Signal
Technologies
PN2222A
CBETO-92
PZT2222A
BC
C
SOT-223
E
MMBT2222A
C
B
E
SOT-23
Mark: 1P
NMT2222MMPQ2222
CCCCCCCC
SOIC-16
EBEBEBEB
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 75 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous 1.0 A
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
SOT-6
Mark: 100
C1
E1 C2
B1 E2 B2
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS (except MMPQ2222 and NMT2222)
fTCurrent Gain - Bandwidth Product IC = 20 mA, VCE = 20 V, f = 100 MHz 300 MHz
Cobo Output Capacitance VCB = 10 V, IE = 0, f = 100 kHz 8.0 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 25 pF
rb’CCCollector Base Time Constant IC = 20 mA, VCB = 20 V, f = 31.8 MHz 150 pS
NF Noise Figure IC = 100 µA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz 4.0 dB
Re(hie)Real Part of Common-Emitter
High Frequency Input Impedance IC = 20 mA, VCE = 20 V, f = 300 MHz 60 Ω
SWITCHING CHARACTERISTICS (except MMPQ2222 and NMT2222)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 75 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V
ICEX Collector Cutoff Current VCE = 60 V, VEB(OFF) = 3.0 V 10 nA
ICBO Collector Cutoff Current VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 150°C0.01
10 µA
µA
IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 10 nA
IBL Base Cutoff Current VCE = 60 V, VEB(OFF) = 3.0 V 20 nA
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V, TA = -55°C
IC = 150 mA, VCE = 10 V*
IC = 150 mA, VCE = 1.0 V*
IC = 500 mA, VCE = 10 V*
35
50
75
35
100
50
40
300
VCE(sat)Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA 0.3
1.0 V
V
VBE(sat)Base-Emitter Saturation Voltage* IC = 150 mA, IB = 1.0 mA
IC = 500 mA, IB = 5.0 mA 0.6 1.2
2.0 V
V
tdDelay Time VCC = 30 V, VBE(OFF) = 0.5 V, 10 ns
trRise Time IC = 150 mA, IB1 = 15 mA 25 ns
tsStorage Time VCC = 30 V, IC = 150 mA, 225 ns
tfFall Time IB1 = IB2 = 15 mA 60 ns
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p
Itf=.6 Vtf=1.7 Xtf=3 Rb=10)
NPN General Purpose Amplifier
(continued)
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
PN2222A *PZT2222A
PDTotal Device Dissipation
Derate above 25°C625
5.0 1,000
8.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 125 °C/W
Symbol Characteristic Max Units
**MMBT2222A MMPQ2222
PDTotal Device Dissipation
Derate above 25°C350
2.8 1,000
8.0 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
357 125
240
°C/W
°C/W
°C/W
Typical Characteristics
NPN General Purpose Amplifier
(continued)
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Base-Emitter ON Voltage vs
Collector Current
Pr19
0.1 110 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collector Current
Pr19
1 10 100 500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
ββ = 10
25 °C
125 °C
- 40 °C
Collector-Emitter Saturation
Voltage vs Collector Current
Pr19
110 100 500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
CESAT
25 °C
C
ββ = 10
125 °C
- 40 °C
Typical Pulsed Current Gain
vs Collector Current
Pr19
0.1 0.3 1310 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 40V
CB
CBO
°
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
Pr19
0.1 110 100
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
f = 1 MHz
Cob
C
te
Turn On and Turn Off Times
vs Collector Current
Pr19
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 25 V
cc
Switching Times
vs Collector Current
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
tr
t
s
B1
B2 Ic
10
V = 25 V
cc
tf
td
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
Test Circuits
30 V
1.0 KΩ
16 V
0
≤ 200ns
≤ 200ns
500 Ω
200 Ω
50 Ω
37 Ω
- 15 V
1.0 KΩ
6.0 V
0
30 V
FIGURE 2: Saturated Turn-Off Switching Time
FIGURE 1: Saturated Turn-On Switching Time
1k
NPN General Purpose Amplifier
(continued)