108 PHASE CONTROL SCRs 63 TO 190 AMPERES GE TYPE c50, 52 C150, 152 C60, 62 JEDEC 2N1909-16 2N1792-98 2N2023-30 ELECTRICAL SPECIFICATIONS | VOLTAGE RANGE . FORWARD CONDUCTION Ir (RMS) Max. RMS on-state current (A) Max. average on-state current conduction (A) @ T Max. average on-state current for conduction (A) @ T Max. peak one cycle, non-rapetitive surge IT(Av) ITiAv) Itsm Max. !2t for fusing for 5 to 8.3 msec 12% A2 on-state voltage @ 1 conduction rated IT (av) {V) internal thermal resistance, dc, junction-to-case (C/W) tg Typical turn-off time ({sec) tad tr T di/dt Rate-of-rise turned-on current {A/jisec} turn-on time (jisec} Ty Junction operating temperature range (C} BLOCKING Min. critical rate-of-rise of off-stage dv/dt voltage, exponential @ max. rated Ty (V/Lsec) FIRING . Max. required gate current to trigger ist @-a0 @ 125C Max. required gate voltage to trigger Vat @40C Vert a noone gate voltage to trigger VOLTAGE TYPES Repetitive Peak Forward and Reverse Voltages 25 50 PACKAGE TYPE PACKAGE OUTLINE NO. 63 40 @ 102C 36 @ 101C 1000 4150 1.4 35 125 5 100 40 to 126C C147U C147F Ci47A C147G C147B C147H 147C C147D C147E C147M C1478 C147N C147T C147P C147PA C147PB 141 500-1300 i 500-1300 190 110 @ 90C 95 @ 85C 1600 10,600 2.0 2.5 3 135 100 125 8 8 200 200 ~40 to 125C 40 to 125C CONSULT FACTORY C1iS0E C152E C150M C152M C1508 C1628 C150N C152N c150T C152T C1S50P Cc152P C150PA C152PA C1S0PB C152PB C1S0PC C152PC % STUD C350E C350M C3508 C350N C350T C350P C350PA C3S50PB C350PC % PRESS PAK 109, 108 280High Power Silicon |__50 Controlled Rectifier C52 110A RMS 25to 1200 Volts The General Electric C50 and C52 Silicon Controlled Rectifiers are all- diffused devices designed for phase control applications. C50 ES FEATURES: e High dv/dt With Selection Available e Excellent Surge and I*t Ratings Providing Easy Fusing e Rugged Hermetic Package MAXIMUM ALLOWABLE RATINGS REPETITIVE PEAK REPETITIVE PEAK NON-REPETITIVE PEAK OFF-STATE VOLTAGE REVERSE VOLTAGE REVERSE VOLTAGE TYPE Vorou! Varn! Vasu! T, = -40C to +125C Ts = -40C to +125C T, = +125C C50U) = (2N1909) | C52U 25 Volts 25 Volts 25 Volts C50F (2N1910)|C52F (2N1792) 50 50 75 C50A (2N1911)|}C52A (2N1793) 100 100 150 C50G (2N1912) |C52G (2N1794) 150 150 225 C50B (2N1913) |C52B (2N1795) 200 200 300 CSOH (2N1914)|}C52H (2N1796) 250 250 350 C50C (2N1915)|C52C (2N1797) 300 300 400 C50D (2N1916)|C52D (2N1798) 400 400 500 C50E C52E 500 500 600 C50M C52M 600 600 720 C508 C528 700 700 840 C50N C52N 800 800 960 C50T C52T 900 900 1040 CS50P C52P 1000 1000 1200 C5SOPA C52PA 1100 1100 1320 CSOPB C52PB 1200 1200 1440 1 Half sine wave waveform, 10 msec, maximum pulse width. RMS On-State Current, Iq(Rpmsy-- +e ett 110 Amperes (All Conduction Angles) Average On-State Current, It(qyy-- ee eee Depends on Conduction Angles (See Charts 3 and 4) Critical Rate-of-Rise of On-State Current (Non-Repetitive) di/dt:* Switching From 1200 Volts .. 20... 0. ce ee er eens 100 Amperes Per Microsecond Switching From 600 Volts 2... 0... ce ee ett eee 200 Amperes Per Microsecond Peak One-Cycle Surge (Non-Repetitive) On-State Current, Ipgy (60 Hz)... 6. ee ee eee 1000 Amperes Peak One-Cycle Surge (Non-Repetitive) On-State Current, Ipgy (50 Hz) 2... - 0 eee eee eee eee 910 Amperes It (for fusing), for times > 8.3 milliseconds (See Figure 9)..........-2--0-- eee 4150 (RMS Ampere)? Seconds It (for fusing), for times > 1.5 milliseconds (See Figure 9)... .....-. 000-00 e eee 2850 (RMS Ampere)? Seconds Peak Gate Power Dissipation, Pgy (See Figure 7)... 1... 00 eee ee eee 100 Watts for 150 Microseconds Average Gate Power Dissipation, Paay)- +--+ eee tet teen ett ee ee 2 Watts Storage Temperature, Typg 206 ee ee teen ee ene ete -40C to +150C Operating Temperature, Ty... 6... ee ee et eee ee eee eens -40C to +125C Stud Torque... 2... ee ee eee ee tee eee 125 Lbs.-In. (Min.) 150 Lbs.-In. (Max.) 14 N-m (Min.) 17 N-m (Max.) *di/dt ratings established in accordance with ELA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of VprM stated above; 20 volts, 20 ohms gate trigger source with 0.5 psec short circuit trigger current rise time. 707CHARACTERISTICS TEST SYMBOL} MIN. | MAX. UNITS TEST CONDITIONS Repetitive Peak Reverse IpRM - 10 mA Ty = -40C to +125C and Off-State Current and IRRM VprMm = YRRM C50, C52U (2N1909) 25 Volts Peak C50, C52F 50 C50, C52A (2N1910) (2N1792) 100 C50, C52G (2N1911) (2N1793) 150 C50, C52B (2N1912) (2N1794) 200 C50, C52H 250 C50, C52C (2N1 913) (2N1795) 300 C50, C52D (2N1914) (2N1796) 400 C50, C52E (2N1915) (2N1797) 500 C50, C52M 600 C50, C528 (2N1916) (2N1798) 700 C50, C52N 800 C50, C52T 900 C50, C52P 1000 C50, C52PA 1100 C50, C52PB 1200 DC Gate Trigger Current Iotr 75 mAdc | Tc = +25C, Vp = 6 Vdc, Ry = 3 Ohms ty = 20 msec _ 130 Tce = -40C, Vp = 6 Vdc, Ry = 3 Ohms tp = 20 usec 40 To = +125C, Vp = 6 Vdc, Ry = 3 Ohms tp & 20 usec DC Gate Trigger Voltage Vor _ 3.0 Vde Tc = -40C to +125C, Vp = 6 Vde, tp = 50 Ohms, tp > 20 usec .25 - Tc = +125C, Vp = Rated, Ry = 1000 Ohms, tp = 20 usec Peak On-State Voltage Vim 2.5 Volts | Tc = +25C, Ipm = 500 Amps. Peak. Duty Cycle < 0.01% Holding Current Ip 100 mAdc Tc = +25C, Anode Supply = 24 Vdc. Initial Forward Current = 2 Amperes Thermal Resistance Rsc - 0.4 | C/Watt | Junction-to-Case Critical Rate-of-Rise of Off-State dv/dt 200 Volts/ | Ty = +125C, Rated Vppm Using Linear Voltage. (Higher values may cause psec Exponential Rising Waveform, Gate Open device switching.) Circuited. Exponential dv/dt = Vprm (.632). Circuit Commutated Tum-Off Time tg ~ 80 usec | (1) Tc = +120C (Typical) (2) Ip = 50 Amps. (3) Vp = 50 Volts Min. (4) Vprm (Reapplied) = Rated (5) Rate-of-Rise of Reapplied Forward Blocking Voltage = 20 V/ysec (Linear) (6) Gate Bias; 0 Volts, 100 Ohms During Turm-Off Interval (7) Duty Cycle < 01%. Higher minimum dv/dt selections available, consult factory. 708MAXIMUM ALLOWABLE CASE TEMPERATURE - C AVERAGE ON-STATE POWER DISSIPATION - WATTS INSTANTANEOUS ON-STATE CURREWI - AMPERES 3 6 400 100 40 Ty = 125C Ty = 25C o 0.5 0 45 2.0 25 INSTANTANEOUS ON VOLTAGE - VOLTS MAXIMUM ON-STATE CHARACTERISTICS 3.0 1. 3.5 AMPERES INSTANTANEOUS ON-STATE CURRENT | C50, C52 aib Oo oO Oo 90 oOo 90 Nn QO Oo oO 1500 1000 800 600 400 200 100 0 2 4 6 & INSTANTANEOUS ON VOLTAGE ~ VOLTS 2. MAXIMUM ON-STATE CHARACTERISTICS (HIGH CURRENT LEVEL) 10 50 TO 400 Hz AC LINE OPERATION SQUARE WAVE 130 rt TT 120 Y Gy, lo Rw L) 100 N WIN. etd \ Nw %DUTY CYCLE = +-(100) 90 \ NN SS 80 VVN q \ SN 6OLOUTY 33% CYCLE = 6.25%] 12.5%|| 25% 50% 100% 50 a 0 0 20 40 60 80 100 120 AVERAGE ON~STATE CURRENT ~ AMPERES 3. MAXIMUM ALLOWABLE CASE TEMPERATURE FOR RECTANGULAR CURRENT WAVEFORM 180 160 140 120 100 80' puty CYCLE = 6.25% 7 60 Vi Ls 40 kim T 20 % DUTY CYCLE = +-(100) 0 0 20 40 60 80 100 120 AVERAGE ON-STATE CURRENT - AMPERES 5. MAXIMUM ON-STATE POWER DISSIPATION FOR RECTANGULAR CURRENT WAVEFORM 709 MAXIMUM ALLOWABLE CASE TEMPERATURE - C AVERAGE ON-STATE POWER DISSIPATION - WATTS SINUSOIDAL CONDUCTION CONDUCTION ANGLE = 30 60 OC, Ip, 3, 6 CIRCUITS - RESISTIVE OR INDUCTIVE LOAD 50 TO. 400 Hz. 10 20 30 40 50 60 70 80 90 AVERAGE ON-STATE CURRENT - AMPERES 4. MAXIMUM ALLOWABLE CASE TEMPERATURE FOR SINUSOIDAL CURRENT WAVEFORM 100 110 120 130 120 No 100 CONDUCTION ANGLE = 30 0 10 20 30 40 50 60 70 AVERAGE ON-STATE CURRENT - AMPERES 6. MAXIMUM ON-STATE POWER DISSIPATION FOR SINUSOIDAL CURRENT WAVEFORM 80 90ao bb ADANDMOO POSSIBLE DC TRIGGER THERMAL IMPEDANCE - C/WATT Nn 20v, 202 LOAD LINE INSTANTANEOUS GATE VOLTAGE VOLTS INSTANTANEOUS GATE CURRENT - AMPERES 7. GATE TRIGGERING CHARACTERISTICS AND POWER RATINGS 10900 8,000 6,000 Z - 3 SECONDS r23 (RMS AMPERES) 2 10,000 8,000 6,000 SURGE ON - STATE > 5 CURRENT (AMPERES) PEAK MAX SINEWAVE nN 3 o 1,000 I 2 3 4 PULSE BASE WIDTH MILLISECONDS 9. SUB-CYCLE SURGE (NON-REPETITIVE) ON-STATE CURRENT AND i?t RATING 5 6 7 8 1000 12.5% DUTY CYCLE = 6.25% VY LQ LL. 7, % DUTY CYCLE = +-(100) AVERAGE ON-STATE POWER DISSIPATION - WATTS AVERAGE ON- STATE POWER DISSIPATION - WATTS {00 200 300 400 500 AVERAGE ON-STATE CURRENT - AMPERES MAXIMUM ON-STATE POWER DISSIPATION FOR RECTANGULAR CURRENT WAVEFORM (EXTENDED RANGE) 71. 710 0.7 0.6 0.5 0.4 0.3 0.2 O.l or 4 ste i <a Ll Ss TIME + SEC| 8. TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE 1,000 800 om . WN 600 PS mM PAY 500 400 { 2 3 4 5 6 7 8 9 10 NUMBER OF CYCLES (60Hz) 10. SURGE (NON-REPETITIVE) ON-STATE CURRENT 1100 1000 900 90 60 800 CONDUCTION ANGLE = 30 700 600 $00 400 300 200 CONDUSTION ANGLE 100 %9 100 200 300 400 500 AVERAGE oNn-STATE CURRENT - AMPERES MAXIMUM ON-STATE POWER DISSIPATION FOR SINUSOIDAL CURRENT WAVEFORM (EXTENDED RANGE) 12.[ c50, c52 | OUTLINE DRAWINGS SEATING PLANE : , METRIC METRIC <4 A sym | INCHES MM sym.| INCHES MM NOTES SG es MIN. | MAX. | MIN. | MAX. MIN. | MAX.] MIN. | MAX. OQ! A | 1.020] 1.140] 25.90]}28.96] L 590] 640] 14.98] 16.26 - - _ _ S we : B .390] 500] 9.90/12.70 oa" l 4 c 1.460 REF. 7.92 REF. N 058) .070) 1.47) 1.78 4 T D | 1.660/1.800| 42.16145.72 |. he K f E 312 REF 7.92 REF. P 840) 910) 21.33) 23.1) D F F | 797] 827 |2024] 21.01 6 060] .075| 152] 191) @ 425| 499] 10.79] 12.67 MODEL TERMINAL | TERMINAL | TERMINAL s _ THREAD SIZE H | 385| 415] 9.77/10.54) T 060 1.52! 2 R) 445| 485 | 11.30112.32 (.052/1.063| 26.72! 27.00 c52 GATE CATHODE ANODE |1/2-20 UNF-28 x. | 198! 212! 5.02] 5.38 NOTES: 1. One nut and one lockwasher supplied with each unit. Material of hardware is steel, cad plated. 2. T dimension is area of unthreaded portion. Com- plete threads are within 2.5 threads of seating plane. 3. Angular orientation of terminals is undefined. METRIC : METRIC L E SYM INCHES MM SYM INCHES M NOTES | SEATING PLANE MIN. | MAX.| MIN. | MAX. MIN. | MAX.] MIN. | MAX. G om RED Loa A 1020] 1.140) 25.90]/28.96] L 330} 8.38; | x _@ waite SEE NOTE | B R B | 390] 500| 990/1270| m | 275| 325] 698| 826 =e Pp lan c [1.570]1.750 | 39.87/4445| N | 065} .095| 165] 2.41 ~~ K C1) (~] D |6.000)6.390 |I52.40!162.31] P 840| 910 | 2133) 23.11 J | (6.85017,500 |173.99119050) Q 425| 499] (0.79/ 12.67 797| 827 | 2024] 21: k _ . 4 L SEE NOTE 2 J F 9 827 | 2024/2101) R 920 23.36 |m G 140] 150] 355) 3.81) T | 060; 1.57 5 | T se ~ H | | 300 762 N J 500} 610] 12.70)15.49] V 1.052 11.063 | 26.72 | 27.00 D FE K 260) 281] 660] 7.14 Se TERMINAL | TERMINAL | TERMINAL | TERMINAL Ss (1) MODEL THREAD SIZE 2 AUX CATHODE | ANODE c50 GATE | CATHODE + 172 20UNF-28 @) NOTES: 1, Gate and auxiliary cathode leads supplied lightly twisted together. 2, Flexible copper lead. . . . NOTES: 3. One nut and one lockwasher supplied with each unit. Material of hardware is steel, cad plated. WITH HARDWARE WITHOUT HARDWARE 4. "R dimension is diameter of effective seating area UNIT OUNCES GRAMS OUNCES GRAMS 5. T' dimension is area of unthreaded portion. Com- plete threads are within 2.5 threads of seating plane. c50 4.25 120 3.50 99 6. Angular orientation of terminals is undefined. C52 3.50 99 2.75 78 711