Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 9
1Publication Order Number:
MBRB2060CT/D
MBRB2060CTG,
MBR2060CTG,
NRVBB2060CTT4G
SWITCHMODE
Power Rectifiers
TO−220/D2PAK Surface Mount Power
Package
These state−of−the−art devices employ the use of the Schottky
Barrier principle with a platinum barrier metal.
Features
Package Designed for Power Surface Mount Applications (D2PAK)
Center−Tap Configuration (D2PAK)
Guardring for Stress Protection
Low Forward Voltage
175C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Short Heat Sink Tab Manufactured − Not Sheared (D2PAK)
Similar in Size to Industry Standard TO−220 Package
AEC−Q101 Qualified and PPAP Capable
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 1.7 Grams (Approximately) − D2PAK,
1.9 Grams (Approximately) − TO−220
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds (D2PAK)
Device Meets MSL1 Requirements (D2PAK)
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 8000 V)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES, 60 VOLTS
1
3
4
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
D2PAK
CASE 418B
STYLE 3
MARKING DIAGRAMS
B2060G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B2060 = Device Code
G = Pb−Free Package
AKA = Diode Polarity
AY WW
TO−220AB
CASE 221A
STYLE 6
AY WW
B2060G
AKA
MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G
http://onsemi.com
2
MAXIMUM RATINGS (Per Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60 V
Average Rectified Forward Current
(Rated VR, TC = 110C) Total Device
IF(AV) 10
20
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 100C)
IFRM 20
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A
Storage Temperature Range Tstg −65 to +175 C
Operating Junction Temperature (Note 1) TJ−65 to +175 C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Value Unit
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient (Note 2)
MBRB2060CTG
Junction−to−Ambient (Note 2)
MBR2060CTG
RqJC
RqJA
RqJA
2.0
50
60
C/W
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 20 Amps, TJ = 125C)
(iF = 20 Amps, TJ = 25C)
vF0.85
0.95
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 125C)
(Rated dc Voltage, TJ = 25C)
iR35
0.15
mA
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping†
MBRB2060CTG D2PAK
(Pb−Free)
50 Units / Rail
MBRB2060CTT4G D2PAK
(Pb−Free)
800 Units / Tape & Reel
NRVBB2060CTT4G D2PAK
(Pb−Free)
800 Units / Tape & Reel
MBR2060CTG TO−220
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G
http://onsemi.com
3
Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode
Figure 3. Typical Current Derating, Case,
Per Leg
Figure 4. Average Power Dissipation and
Average Current
0.01
0.1
1
10
120100806040200
VR, REVERSE VOLTAGE (VOLTS)
IR, REVERSE CURRENT (mA)
TJ = 150C
TJ = 125C
TJ = 100C
TJ = 25C
0.5
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
1
3
5
10
20
50
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
TJ = 25C
100C
150C
125C
0
AVERAGE CURRENT (AMPS)
0
2
4
6
8
10
12
14
16
18
20
2 4 6 8 10 12 14 16 18 20
AVERAGE POWER (WATTS)
TJ = 125C
SQUARE
WAVE
DC
IPK/IAV = 10
IPK/IAV = 20
PI
IPK/IAV = 5
80
TC, CASE TEMPERATURE (C)
15
0
I
100 120 140 160
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
SQUARE WAVE
dc
10
20
RATED VOLTAGE APPLIED
RqJC = 2C/W
180
5.0
140
MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G
http://onsemi.com
4
PACKAGE DIMENSIONS
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
−B−
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE RN P
U
VIEW W−W VIEW W−W VIEW W−W
123
D2PAK 3
CASE 418B−04
ISSUE K
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
8.38
5.080
DIMENSIONS: MILLIMETERS
PITCH
2X
16.155
1.016
2X
10.49
3.504
MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G
http://onsemi.com
5
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MBRB2060CT/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
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