- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- Case: SOT- 323 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
SOT-323
- Weight: 0.005 grams (approximately)
SYMBOL UNIT
P
D
mW
V
CBO
V
V
CEO
V
V
EBO
V
I
C
A
R
θJA
K/W
T
J
, T
STG
°C
Notes: 1. Transistor mounted on a FR4 printed-circuit board
SYMBOL UNIT
Collector-Base Breakdown Voltage V
(BR)CBO
V
Collector-Emitter Breakdown Voltage V
(BR)CEO
V
Emitter-Base Breakdown Voltage V
(BR)EBO
V
I
CBO
nA
Emitter Cut-off Current I
EBO
nA
I
B
= 50 mA V
CE(sat)
V
Transition Frequency V
CE
= 5 V I
C
= 10 mA f = 100MHz f
T
MHz
Document Number: DS_S1404010
Collector Cut-off Current
at I
C
= 10 µA
at I
C
= 10 mA
at I
E
= 10 µA
at V
CB
= 20 V
-
-
-
100
50
45
5
-
at V
EB
= 5 V
Collector-Emitter Saturation Voltage - 100
at I
C
= 500mA - 0.7
100 -
DC Current Gain
at V
CE
= 1 V , I
C
= 100 mA
at V
CE
= 1 V , I
C
= 500 mA
-16W
-25W
-40W h
FE
100
160 400
250 600
40
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance, Junction to Ambient
Version: C14
250
PARAMETER
Junction and Storage Temperature Range
50
45
5
0.5
625
-55 to + 150
Power Dissipation 200
- Epitaxial planar die construction
- Surface mount device type
Taiwan Semiconductor
VALUE
Small Signal Product
200mW, PNP Small Signal Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
unless otherwise noted)
MECHANICAL DATA
FEATURES