PBSS5160T,215 - NXP Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2003 Jun 24

2004 May 12

DISCRETE SEMICONDUCTORS

PBSS4160T

60 V, 1 A

NPN low VCEsat (BISS) transistor

ook, halfpage

M3D088

2004 May 12 2

NXP Semiconductors Product data sheet

60 V, 1 A

NPN low VCEsat (BISS) transistor PBSS4160T

FEATURES

•Low collector-emitter saturation volt age VCEsat

•High collector current capability IC and ICM

•High efficiency, reduces heat generation

•Reduces printed-circuit board area required

•Cost effective re placement for medium powe r transistor

BCP55 and BCX55.

APPLICATIONS

•Major application segments:

– Automotive 42 V power

– Telecom infrastructure

– Industrial.

•Power management:

– DC-to-DC conversion

– Supply line switching.

•Peripheral driver

– Driver in low su pply voltage applications (e.g. lamps

and LEDs)

– Inductive load driver (e.g. relays,

buzzers and motors).

DESCRIPTION

NPN low V CEsat trans i stor in a SOT23 plastic packa ge.

PNP complement: PBSS5160T.

MARKING

Note

1. * = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China.

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE(1)

PBSS4160T *U5

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 60 V

ICcollector current (DC) 1 A

ICM peak collector current 2 A

RCEsat equivalent on-resistance 250 mΩ

PIN DESCRIPTION

1base

2emitter

3collector

handbook, halfpage

MAM255

Top view

Fig.1 Simplified outline (SOT23 ) and symbo l .

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PBSS4160T −plastic surface mounted package; 3 leads SOT23

2004 May 12 3

NXP Semiconductors Pr oduct data shee t

60 V, 1 A

NPN low VCEsat (BISS) transistor PBSS4160T

LIMITING VALUES

In accordance with th e A b solute Maxi mum Rating System (IEC 60134).

Notes

1. Device mounted o n an FR4 printed-circuit boa rd, single-sided copper, tin-plated, standard footprint.

2. Device mounted o n an FR4 printed-circuit boa rd, single-s ided copper, tin-plated, 1 cm2 collector mounting pad.

3. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 10 ms.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter −80 V

VCEO collector-emitter voltage open base −60 V

VEBO emitter-base voltage open collector −5 V

ICcollector current (DC) note 1 −0.9 A

note 2 −1 A

ICM peak collector current t = 1 ms or limited by Tj(max) −2 A

IBbase current (DC) −300 mA

IBM peak base current tp ≤ 300 μs; δ ≤ 0.02 −1 A

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −270 mW

Tamb ≤ 25 °C; note 2 −400 mW

Tamb ≤ 25 °C; notes 1 and 3 −1.25 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

handbook, halfpage

0 40 80 160

Ptot

(mW)

(1)

(2)

500

400

120

300

200

100

MLE128

Tamb (°C)

Fig.2 Power derating curves.

(1) Device mounted with 1 cm2 collector tab.

(2) Device mounted on standard footprint.

2004 May 12 4

NXP Semiconductors Pr oduct data shee t

60 V, 1 A

NPN low VCEsat (BISS) transistor PBSS4160T

THERMAL CHARACTE RISTICS

Notes

1. Device mounted o n an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

2. Device mounted o n an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.

3. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 10 ms.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to

ambient in free air; note 1 465 K/W

in free air; note 2 312 K/W

in free air; notes 1 and 3 100 K/W

handbook, full pagewidth

103

102

10−510−410−310−210−11

Zth

(K/W)

tp (s)

10 102103

MLE127

δ = 1

0.75

0.33

0.05

0.02

0.01

0.5

0.2

0.1

Fig.3 Transient thermal impeda nc e as a function of pulse time; typical values.

Mounted on printed-circuit board; standard footprint.

2004 May 12 5

NXP Semiconductors Pr oduct data shee t

60 V, 1 A

NPN low VCEsat (BISS) transistor PBSS4160T

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = 60 V; IE = 0 A − − 100 nA

VCB = 60 V; IE = 0 A; Tj = 150 °C− − 50 μA

ICES collector-emitter cut-off current VCE = 60 V; VBE = 0 A − − 100 nA

IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA

hFE DC current gain VCE = 5 V; IC = 1 mA 250 400 −

VCE = 5 V; IC = 500 mA; note 1 200 350 −

VCE = 5 V; IC = 1 A; note 1 100 150 −

VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA −90 110 mV

IC = 500 mA; IB = 50 mA −110 140 mV

IC = 1 A; IB = 100 mA; note 1 −200 250 mV

VBEsat base-emitter saturation voltage IC = 1 A; IB = 50 mA −0.95 1.1 V

RCEsat equivalent on-re sistance IC = 1 A; IB = 100 mA; note 1 −200 250 mΩ

VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A −0.82 0.9 V

fTtransition frequency IC = 50 mA; VCE = 10 V;

f = 100 MHz 150 220 −MHz

Cccollector ca pacitance VCB = 10 V; IE = Ie = 0 A; f = 1 MHz −5.5 10 pF

handbook, halfpage

800

200

400

600

MLE130

10−11IC (mA)

hFE

10 102103104

(1)

(2)

(3)

Fig.4 DC current gain as a fu nction of collector

current; ty pical values.

VCE = 5 V.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage MLE133

1.2

0.4

0.8

10−1110 IC (mA)

VBE

(V)

102103104

(1)

(3)

(2)

Fig.5 Base-emitter voltage as a function of

collector current; typical values.

VCE = 5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 100 °C.

2004 May 12 6

NXP Semiconductors Pr oduct data shee t

60 V, 1 A

NPN low VCEsat (BISS) transistor PBSS4160T

handbook, halfpage

MLE135

10−1

10−2

10−3

10−1110 IC (mA)

VCEsat

(V)

102103104

(3)

(1)

(2)

Fig.6 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 10.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

11010

10−1103104

10−2

10−1

MLE104

IC (mA)

VCEsat

(V)

(1)

(3) (2)

Fig.7 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

11010

2103104

10−2

10−1

MLE129

IC (mA)

VCEsat

(V)

(1)

(2)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

Tamb = 25 °C.

(1) IC/IB = 100.

(2) IC/IB = 50.

handbook, halfpage MLE134

1.2

0.4

0.8

10−1110 IC (mA)

VBEsat

(V)

102103104

(1)

(2)

(3)

Fig.9 Base-emitter saturation v oltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 100 °C.

2004 May 12 7

NXP Semiconductors Pr oduct data shee t

60 V, 1 A

NPN low VCEsat (BISS) transistor PBSS4160T

handbook, halfpage

0.4

0.8

1.2

1.6

1VCE (V)

(A)

234

MLE131

(1)

(10)

(9)

(7)

(2)(3)

(4)(5)(6)

(8)

Fig.10 Collector c urrent as a function of

collector-emitter voltage; typical values.

(1) IB = 60 mA.

(2) IB = 54 mA.

(3) IB = 48 mA.

(4) IB = 42 mA.

(5) IB = 36 mA.

(6) IB = 30 mA.

(7) IB = 24 mA.

(8) IB = 18 mA.

(9) IB = 12 mA.

(10) IB = 6 mA.

Tamb = 25 °C.

handbook, halfpage

MLE132

103

102

10−1

10−11

RCEsat

(Ω)

IC (mA)

10 102103104

(3)

(1)

(2)

Fig.11 Equivalent on-resistan ce as a function of

collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.

2004 May 12 8

NXP Semiconductors Pr oduct data shee t

60 V, 1 A

NPN low VCEsat (BISS) transistor PBSS4160T

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

2004 May 12 9

NXP Semiconductors Pr oduct data shee t

60 V, 1 A

NPN low VCEsat (BISS) transistor PBSS4160T

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or completing a design.

2. The product s ta tus of device(s ) described in this do cument may have ch anged since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tion.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, c onveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property ri gh ts.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

For additional information p lease visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this document d oes not form part o f an y quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or in tellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/02/pp10 Date of release: 2004 May 12 Document orde r number: 9397 750 13198