DATA SH EET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 17
DISCRETE SEMICONDUCTORS
BCY58; BCY59
NPN switching transistors
M3D125
1997 Jun 17 2
Philips Semiconductors Product specification
NPN switching transistors BCY58; BCY59
FEATURES
•Low current (max. 100 mA)
•Low voltage (max. 45 V).
APPLICATIONS
•Switching and amplification.
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
PNP complements: BCY78 and BCY79.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to case
Fig.1 Simplified outline (TO-18) and symbol.
handbook, halfpage
MAM264
1
3
2
3
12
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter
BCY58 −−32 V
BCY59 −−45 V
VCEO collector-emitter voltage open base
BCY58 −−32 V
BCY59 −−45 V
ICcollector current (DC) −−100 mA
Ptot total power dissipation Tamb ≤45 °C−−340 mW
Tcase ≤45 °C−−1W
h
FE DC current gain IC= 2 mA; VCE =5V
BCY58/VII; BCY59/VII 120 170 220
BCY58/VIII; BCY59/VIII 180 250 310
BCY58/IX; BCY59/IX 250 350 460
BCY58/X; BCY59/X 380 500 630
fTtransition frequency IC= 10 mA; VCE = 5 V; f = 100 MHz 150 −−MHz
toff turn-off time ICon = 10 mA; IBon = 1 mA; IBoff =−1mA −480 800 ns
ICon = 100 mA; IBon = 10 mA; IBoff =−10 mA −450 800 ns
1997 Jun 17 3
Philips Semiconductors Product specification
NPN switching transistors BCY58; BCY59
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BCY58 −32 V
BCY59 −45 V
VCEO collector-emitter voltage open base
BCY58 −32 V
BCY59 −45 V
VEBO emitter-base voltage open collector −7V
I
Ccollector current (DC) −100 mA
ICM peak collector current −200 mA
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤45 °C−340 mW
Tcase ≤45 °C−1W
T
stg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air 450 K/W
Rth j-c thermal resistance from junction to case 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current
BCY58 IE= 0; VCB =32V −−10 nA
IE= 0; VCB = 32 V; Tj= 150 °C−−10 µA
ICBO collector cut-off current
BCY59 IE= 0; VCB =45V −−10 nA
IE= 0; VCB = 45 V; Tj= 150 °C−−10 µA
IEBO emitter cut-off current IC= 0; VEB =5V −−10 nA
hFE DC current gain IC=10µA; VCE =5V
BCY58/VII; BCY59/VII −20 −
BCY58/VIII; BCY59/VIII 20 95 −
BCY58/IX; BCY59/IX 40 190 −
BCY58/X; BCY59/X 100 300 −
1997 Jun 17 4
Philips Semiconductors Product specification
NPN switching transistors BCY58; BCY59
hFE DC current gain IC= 2 mA; VCE =5V
BCY58/VII; BCY59/VII 120 170 220
BCY58/VIII; BCY59/VIII 180 250 310
BCY58/IX; BCY59/IX 250 350 460
BCY58/X; BCY59/X 380 500 630
hFE DC current gain IC= 10 mA; VCE =1V
BCY58/VII; BCY59/VII 80 250 −
BCY58/VIII; BCY59/VIII 120 300 400
BCY58/IX; BCY59/IX 160 390 630
BCY58/X; BCY59/X 240 550 1000
hFE DC current gain IC= 100 mA; VCE =1V
BCY58/VII; BCY59/VII 40 −−
BCY58/VIII; BCY59/VIII 45 −−
BCY58/IX; BCY59/IX 60 −−
BCY58/X; BCY59/X 60 −−
V
CEsat collector-emitter saturation voltage IC= 10 mA; IB= 0.25 mA 50 100 350 mV
IC= 100 mA; IB= 2.5 mA 150 250 700 mV
VBEsat base-emitter saturation voltage IC= 10 mA; IB= 0.25 mA 600 700 850 mV
IC= 100 mA; IB= 2.5 mA 750 875 1200 mV
Cccollector capacitance IE=i
e= 0; VCB = 10 V; f = 1 MHz −−5pF
C
eemitter capacitance IC=i
c= 0; VEB = 500 mV; f = 1 MHz −−15 pF
fTtransition frequency IC= 10 mA; VCE = 5 V; f = 100 MHz 150 −−MHz
F noise figure IC= 200 µA; VCE =5V; R
S=2kΩ;
f = 1 kHz; B = 200 Hz −−10 dB
Switching times (between 10% and 90% levels)
ton turn-on time ICon = 10 mA; IBon = 1 mA;
IBoff =−1mA −85 150 ns
tddelay time −35 −ns
trrise time −50 −ns
toff turn-off time −480 800 ns
tsstorage time −400 −ns
tffall time −80 −ns
ton turn-on time ICon = 100 mA; IBon =10mA;
I
Boff =−10 mA −55 150 ns
tddelay time −5−ns
trrise time −50 −ns
toff turn-off time −450 800 ns
tsstorage time −250 −ns
tffall time −200 −ns
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1997 Jun 17 5
Philips Semiconductors Product specification
NPN switching transistors BCY58; BCY59
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT18/13 TO-18B11/C7 type 3 97-04-18
a
α
k
DA L
seating plane
b
D1
0 5 10 mm
scale
Metal-can cylindrical single-ended package; 3 leads SOT18/13
wA
M M BM
A
1
2
3
j
B
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT w
mm 5.31
4.74 0.47
0.41 5.45
5.30 4.70
4.55 1.03
0.94 1.1
0.9 15.0
12.7
α
0.40 45°
AabDD
1
jkL
2.54
1997 Jun 17 6
Philips Semiconductors Product specification
NPN switching transistors BCY58; BCY59
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1997 Jun 17 7
Philips Semiconductors Product specification
NPN switching transistors BCY58; BCY59
NOTES
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Philips Semiconductors – a worldwide company
© Philips Electronics N.V. 1997 SCA54
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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 Jun 17 Document order number: 9397 750 02162
