SMBT3904...PN NPN / PNP Silicon Switching Transistor Array * High current gain * Low collector-emitter saturation voltage * Two (galvanic) internal isolated NPN / PNP transistor in one package * Pb-free (RoHS compliant) package * Qualified according AEC Q101 SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177 Type Marking Pin Configuration Package SMBT3904PN s3P 1=E 2=B 3=C 4=E 5=B 6=C SOT363 SMBT3904UPN s3P 1=E 2=B 3=C 4=E 5=B 6=C SC74 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 40 Emitter-base voltage VEBO 6 Collector current IC Total power dissipation- Ptot Value 200 250 TS 105 C, SMBT3904UPN 330 Tj Storage temperature Tstg 1 V mA mW TS 115 C, SMBT3904PN Junction temperature Unit 150 C -65 ... 150 2012-08-21 SMBT3904...PN Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value SMBT3904PN 140 SMBT3904UPN 135 Unit K/W Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 Unit V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 40 - - V(BR)EBO 6 - - ICBO - - 50 IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current nA VCB = 30 V, IE = 0 DC current gain2) - hFE IC = 100 A, VCE = 1 V 40 - - IC = 1 mA, VCE = 1 V 70 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, VCE = 1 V 30 - - Collector-emitter saturation voltage2) V VCEsat IC = 10 mA, IB = 1 mA - - 0.25 IC = 50 mA, IB = 5 mA - - 0.4 IC = 10 mA, IB = 1 mA 0.65 - 0.85 IC = 50 mA, IB = 5 mA - - 0.95 Base emitter saturation voltage2) VBEsat 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300s; D < 2% 2 2012-08-21 SMBT3904...PN Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 250 - - Ccb - - 3.5 Ceb - - 10 td - - 35 tr - - 35 tstg - - 225 tf - - 75 F - - 5 AC Characteristics Transition frequency fT MHz IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time ns VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure dB IC = 100 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 1 k 3 2012-08-21 SMBT3904...PN DC current gain hFE = (IC) Saturation voltage IC = (VBEsat ; VCEsat) VCE = 1 V, normalized hFE = 10 10 3 EHP00756 2 C mA 125 C 10 2 5 hFE 25 C V BE V CE -55 C 10 2 10 1 5 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 mA10 10 0 0 0 0.2 0.4 0.6 IC 0.8 1.0 V 1.2 V BE sat , V CE sat Total power dissipation P tot = (TS) Total power dissipation P tot = (TS) SMBT3904PN SMBT3904UPN 300 360 mW 250 300 225 270 200 240 Ptot Ptot mW 175 210 150 180 125 150 100 120 75 90 50 60 25 30 0 0 15 30 45 60 75 90 105 120 C 0 0 150 TS 15 30 45 60 75 90 105 120 C 150 TS 4 2012-08-21 SMBT3904...PN Permissible Pulse Load RthJS = (tp) Permissible Pulse Load SMBT3904PN Ptotmax/PtotDC = (tp ) SMBT3904PN 10 3 10 3 Ptotmax/PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp s 10 0 10 0 tp Permissible Puls Load RthJS = (t p) Permissible Pulse Load SMBT3904UPN Ptotmax/PtotDC = (tp ) SMBT3904UPN 10 10 2 3 Ptotmax /PtotDC RthJS K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 5 2012-08-21 SMBT3904...PN Delay time td = (IC) Rise time tr = (IC) Storage time tstg = (IC) EHP00761 10 3 EHP00762 10 3 ns ns t r ,t d ts tr td 25 C 125 C h FE = 10 10 2 h FE = 20 10 10 2 VCC = 3 V h FE = 20 10 40 V 15 V 10 1 10 1 V BE = 2 V 0V 10 0 0 10 5 10 1 5 10 2 10 0 0 10 mA 10 3 5 10 1 5 10 2 mA 10 3 C C Rise time tr = (I C) Fall time tf = (IC) EHP00763 10 3 EHP00764 10 3 ns ns tr tf 25 C 125 C 25 C VCC = 40 V 10 10 2 2 VCC = 40 V h FE = 10 125 C h FE = 20 10 1 10 0 0 10 h FE = 10 5 10 1 10 1 5 10 2 10 0 0 10 mA 10 3 5 10 1 5 10 2 mA 10 3 C C 6 2012-08-21 Package SC74 SMBT3904...PN Package Outline B 1.1 MAX. 1 2 3 0.35 +0.1 -0.05 Pin 1 marking 0.2 B 6x M A 0.1 MAX. 0.95 0.2 1.9 1.6 0.1 4 10 MAX. 5 2.5 0.1 6 0.25 0.1 0.15 +0.1 -0.06 (0.35) 10 MAX. 2.9 0.2 (2.25) M A Foot Print 2.9 1.9 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.7 8 4 Pin 1 marking 3.15 1.15 7 2012-08-21 Package SOT363 SMBT3904...PN Package Outline 2 0.2 0.9 0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 0.1 4 0.1 MIN. 5 2.1 0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 8 2012-08-21 SMBT3904...PN Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2012-08-21