T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 1 of 5
1N5802US, 1N5804US, 1N5806US and URS
Availa ble on
commercial
versions
VOIDLESS HERMETICALLY SEALED ULTR AFAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/477
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. The industry-recognized 2.5 amp rated rectifiers
with working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless glass
construction using an internal “Category 1” metallurgical bond. These devices are available in both
surface mount MELF and leaded package configurations. Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time requirements
including standard, fast and ultrafast device types in both through-hole and surface mount
packages.
“A” or D-5A
Package (US)
“A” Package
(URS)
Also available in:
“A” Package
(axial-leaded)
1N5802, 04 and 06
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered surface mount equivalent of1N5802, 1N5804, 1N5806 series.
• Voidless hermetically sealed glass package.
• Quadruple-layer passiv at ion
• Extr emely rob ust constr u cti on.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualific ati ons are av aila ble per MIL-PRF-19500/477.
• RoHS compliant versions available (commercial grade only).
APPLICA TIONS / BENEFITS
• Ultrafast recovery 2.5 amp rectifier series from 50 to 150 V.
• Military, space and other high-reliability applications.
• Switching power supplies or other applications requiring extremely fast switching & low forward
loss.
• High forwar d surge curr ent capability.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RATINGS @ TA= 25oC unless otherwise specified
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resi stan ce Jun cti on-to-End Cap
(see Figure 1)
RӨJEC 13
o
C/W
Working Peak Reverse Voltage: 1N5802US & URS
1N5804US & URS
1N5806US & URS
VRWM 50
100
150
V
Forward Surge Current (3)
IFSM
35
A
Average Rectified Output Current
@ TEC = +75
o
C
(1)
IO1 2.5 A
Average Rectified Output-Current
@ TA = +55
o
C
(2)
IO2 1.0 A
Capacitance
@ VR = 10 V, f = 1 MHz; Vsig = 50 mV (p-p)
C 25 pF
Reverse Recovery Time (4)
trr
25
ns
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. IO1 is rated at 2.5 A @ TEC = 75 oC. Derat e at 50 mA/oC for TEC above 125 oC.
2. IO2 is rated at 1.0 A @ TA = 55 oC for PC boards where thermal resistance from mounting point to ambient
is sufficient l y controlled (RӨJX < 154 oC/W) where TJ(max) 175 oC is not exceeded. Derate at 8.33 mA/oC
for TA above 55 oC.
3. TA = 25 oC @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals.
4. IF = 0. 5 A, IRM = 0.5 A, IR(REC) = .05 A.
T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 2 of 5
1N5802US, 1N5804US, 1N5806US and URS
MECHANICAL and PACKAGING
• CASE: Hermetically sealed voidless hard glass with tungsten slugs.
• TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper.
• MARKING: Body painted and part number.
• POLARITY: Cathode indicated by band.
• TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities.
• WEIGHT: 193 milligrams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N5802 US (e3)
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(See Electric al Characteristics
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grad e only)
Blank = non-RoHS compliant
Surface Mount package type
US = 2 Square end caps
URS = 1 Square + 1 Round end
cap
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
IO
Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and
a 180 degr ee conduction angl e.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs.
ELECTRICAL CHARACTERISTICS
BREAKDOWN
VOLTAGE
(MIN.)
@ 100
µ
A
V
(BR)
MAXIMUM FORWARD
VOLTAGE
@ 8.3 ms pulse
VFM
REVERSE
CURRENT
(MAX.)
@ VRWM
I
R
SURGE
CURRENT
(MAX)
IFSM
(Note 1)
REVERSE
RECOVERY
TIME (MAX)
trr
(Note 2)
THERMAL
IMPEDANCE
@ tH = 10 ms
ZӨJX
(Note 3)
TYPE
Volts
Volts
µA
Amps ns oC/W
I
F
= 1.0 A
I
F
= 2.5 A
25 oC
125 oC
1N5802US & URS
60
0.875
0.975
1
175
35
25
4.0
1N5804US & URS
110
0.875
0.975
1
175
35
25
4.0
1N5806US & URS
160
0.875
0.975
1
175
35
25
4.0
NOTES: 1. TA = 2. 5 oC @ I O = 1.0 A and VRWM for t en 8.3 ms surges at 1 minute intervals (IFSM surge is also a maximum rating).
2. IF = 0. 5 A, IRM = 0.5 A, IR(REC) = .05 A (trr reverse recovery time is also a maximum rating).
3. For the complete thermal impedance curve over a broad range of heating times, see Figure 1.
T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 3 of 5
1N5802US, 1N5804US, 1N5806US and URS
GRAPHS
Heating Time (sec)
FIGURE 1
Maximum Thermal Impedance
IO (A)
FIGURE 2
Rectifier Power Versus IO (Average Forward Current)
Theta (oC/W)
P
O
(W)
T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 4 of 5
1N5802US, 1N5804US, 1N5806US and URS
GRAPHS (continued)
Pad Area (sq in)
FIGURE 3
Thermal Resistance vs FR4 Pad Area At Ambient
PCB horizontal (for each pad) with 1, 2, and 3 oz copper
VF (V)
FIGURE 4
Forward Voltage vs Forward Current
I
F
(V)
Thermal Resistance (oC/W)
T4-LDS-0211-1, Rev. 1 (111900) ©2011 Microsemi Corporation Page 5 of 5
1N5802US, 1N5804US, 1N5806US and URS
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimensions are pr e-solder dip.
4. Minimum clearance of glass body to mounting surface on all
orientations.
5. Cathode marking to be either in color band, three dots spaced equally
or a color dot on the face of the end tab.
6. Color dots will be .020 inch (0.51 mm) diameter minimum and thos e
on the face of the end tab shall not lie within .020 inch (0.51 mm) of
the mounting surface.
7. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
8. On “URS” one end cap shall be square and the other end cap s hall be
round.
DIMENSIONS
Ltr
INCH
MILLIMETERS
Notes
Min
Max
Min
Max
BD
.091
.103
2.31
2.62
8
BL
.168
.200
4.27
5.08
ECT
.019
.028
0.48
0.71
8
S
.003
0.08
PAD LAYOUT
NOTE: If mounting requires adhesive separate from the solder, an additional 0.080 inch
diameter contact may be placed in the center between the pads as an optional
spot for cement.
DIM
INCH
MILLIMETERS
A
0.288
7.32
B
0.070
1.78
C
0.155
3.94