2N3963
2N3964
SILICON
PNP TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3963 and 2N3964
are silicon PNP transistors designed for general purpose
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N3963 2N3964 UNITS
Collector-Base Voltage VCBO 80 45 V
Collector-Emitter Voltage VCEO 80 45 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 200 mA
Power Dissipation (TC=25°C) PD 1.2 W
Power Dissipation PD 360 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 146 °C/W
Thermal Resistance ΘJA 486 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3963 2N3964
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=70V - 10 - - nA
ICBO V
CB=40V - - - 10 nA
ICES V
CE=70V - 10 - - nA
ICES V
CE=40V - - - 10 nA
IEBO V
EB=4.0V - 10 - 10 nA
BVCBO I
C=10μA 80 - 45 - V
BVCES I
C=10μA 80 - 45 - V
BVCEO I
C=5.0mA 80 - 45 - V
BVEBO I
E=10μA 6.0 - 6.0 - V
VCE(SAT) I
C=10mA, IB=0.5mA - 0.25 - 0.25 V
VCE(SAT) I
C=50mA, IB=5.0mA - 0.40 - 0.40 V
VBE(SAT) I
C=10mA, IB=0.5mA - 0.90 - 0.90 V
VBE(SAT) I
C=50mA, IB=5.0mA - 0.95 - 0.95 V
hFE V
CE=5.0V, IC=1.0μA 60 - 180 -
hFE V
CE=5.0V, IC=10μA 100 300 250 500
hFE V
CE=5.0V, IC=10μA, TA=-55°C 40 - 100 -
hFE V
CE=5.0V, IC=100μA 100 - 250 -
hFE V
CE=5.0V, IC=1.0mA 100 450 250 600
hFE V
CE=5.0V, IC=1.0mA, TA=100°C - 600 - 800
hFE V
CE=5.0V, IC=10mA 100 - 200 -
hFE V
CE=5.0V, IC=50mA 90 - 180 -
hFE V
CE=5.0V, IC=50mA, TA=-55°C 45 - 90 -
TO-18 CASE
R0 (17-May 2013)
www.centralsemi.com
2N3963
2N3964
SILICON
PNP TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-18 CASE - MECHANICAL OUTLINE
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
2N3963 2N3964
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
fT V
CE=5.0V, IC=0.5mA, f=20MHz 40 - 50 - MHz
Cob V
CB=5.0V, IE=0, f=1.0MHz - 6.0 - 6.0 pF
Cib V
EB=0.5V, IC=0, f=1.0MHz - 15 - 15 pF
hie V
CE=5.0V, IC=1.0mA, f=1.0kHz 2.5 17 6.0 20 kΩ
hre V
CE=5.0V, IC=1.0mA, f=1.0kHz - 10 - 10 10-4
hfe V
CE=5.0V, IC=1.0mA, f=1.0kHz 100 550 250 700
hoe V
CE=5.0V, IC=1.0mA, f=1.0kHz 5.0 40 5.0 50 μS
NF VCE=5.0V, IC=20mA, BW=15.7kHz - 3.0 - 2.0 dB
NF VCE=5.0V, IC=20μA, BW=1.5kHz
f=10kHz, RS=10kΩ - 3.0 - 2.0 dB
NF VCE=5.0V, IC=20μA, BW=150Hz
f=1.0kHz, RS=10kΩ - 3.0 - 2.0 dB
NF VCE=5.0V, IC=20μA, BW=15Hz
f=100Hz, RS=10kΩ - 10 - 4.0 dB
NF VCE=5.0V, IC=20μA, BW=2.0Hz
f=10Hz, RS=10kΩ - - - 8.0 dB
www.centralsemi.com
R0 (17-May 2013)