TCM1030P Replacement - Power Innovations

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION

●Dual Voltage-Programmable Protectors

- Third Generation Design using Vertical

Power Technology

- Wide -5V to -85V Programming Range

- High 150mA min. Holding Current

●Reduced VBAT Supply Current

- Triggering Current is Typically 50x Lower

- Negative Value Power Induction Current

Removes Need for Extra Protection Diode

●Rated for LSSGR & FCC Surges

●Surface Mount and Through-Hole Options

- TISP61060P for Plastic DIP

- TISP61060D for Small-Outline

- TISP61060DR for Taped and Reeled

Small-Outline

●Functional Replacements for

description

The TISP61060 is a dual forward-conducting

buffered p-gate overvoltage protector. It is

designed to protect monolithic SLICs (Subscriber

Line Interface Circuits), against overvoltages on

the telephone line caused by lightning, a.c.

power contact and induction. The TISP61060

limits voltages that exceed the SLIC supply rail

voltage.

STANDARDWAVE SHAPEITSP

LSSGR10/1000 µs30

FCC Part 6810/160µs45

LSSGR2/10 µs50

PART NUMBERSFUNCTIONAL

REPLACEMENT

TCM1030P, TCM1060P, LB1201ABTISP61060P

TCM1030D, TCM1060D, LB1201ASTISP61060D

TCM1030DR, TCM1060DRTISP61060DR

The SLIC line driver section is typically powered from 0V (ground) and a negative voltage in the region of

-10V to -70V. The protector gate is connected to this negative supply. This references the protection

(clipping) voltage to the negative supply voltage. As the protection voltage will track the negative supply

voltage, the overvoltage stress on the SLIC is minimised. (see Applications Information).

Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially

clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then

the protector will crowbar into a low voltage on-state condition. As the current subsides the high holding

current of the crowbar prevents d.c. latchup.

device symbol

Terminals K1, K2 and A correspond to the alternative

line designators of T, R and G or A, B and C. The

negative protection voltage is controlled by the voltage,

VGG, applied to the G terminal.

SD6XAE

K1 GK2

MD6XAO

'61060D PACKAGE

(TOP VIEW)

NC - No internal connection

Terminal typical application names shown in

parenthesis

8K1

(Tip)

(Ground)

(Ring)

(VS)

(Tip)

(Ring)

MD6XAP

'61060P PACKAGE

(TOP VIEW)

NC - No internal connection

Terminal typical application names shown in

parenthesis

4 5

(Tip)

(Ground)

(Ring)

(VS)

(Tip)

(Ring)

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high

reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the

loading on the SLIC supply during overvoltages caused by power cross and induction.

NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C≤TJ≤85°C. The surge may be repeated after the device returns to

its initial conditions.

2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both

terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the

rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.

absolute maximum ratings

RATINGSYMBOLVALUEUNIT

Repetitive peak off-state voltage, IG=0, -40°C≤TJ≤85°CVDRM-100V

Repetitive peak gate-cathode voltage, VKA=0, -40°C≤TJ≤85°CVGKRM-85V

Non-repetitive peak on-state pulse current(see Notes 1 and 2)

ITSPA

10/1000µs30

10/160 µs45

2/10 µs50

Non-repetitive peak on-state current (see Notes 1 and 2)

ITSMArms 60 Hz sine-wave, 25ms6

60 Hz sine-wave, 2s1

Continuous on-state current (see Note 2)ITM0.3A

Continuous forward current (see Note 2)IFM0.3A

Operating free-air temperature rangeTA-40 to +85°C

Storage temperature rangeTstg-40 to +150°C

Lead temperature 1,6mm (1/16 inch) from case for 10sTL260°C

recommended operating conditions

MINTYPMAXUNIT

CGGate decoupling capacitor100 nF

electrical characteristics, -40°C≤TJ ≤ 85°C (unless otherwise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT

IDOff-state currentVD=-85V, VGK=0VTJ=25°C5 µA

TJ=85°C50 µA

V(BO)Breakover voltagedv/dt=-250V/ms, Source Resistance=300Ω, VGG=-50V

dv/dt=-250V/ms, Source Resistance=300Ω, VGG=-65V

IT=12.5A, 10/1000µs, Source Resistance=80 Ω, VGG =-50V

-53

-68

-55 V

ISSwitching currentdv/dt=-250V/ms, Source Resistance=300Ω, VGG=-50V-100 mA

VTOn-state voltage

IT=1A

IT=10A

IT=16A

IT=30A

VFForward voltage

IF=1A

IF=10A

IF=16A

IF=30A

IHHolding current IT=-1A, di/dt = +1A/ms, VGG=-50V-150 mA

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

IGASGate reverse currentVGG=-85V, K and A terminals connectedTJ=25°C5 µA

TJ=85°C50 µA

IGTGate trigger current IT=-1A, tp(g)≥20µs, VGG=-50V15 mA

dv/dtCritical rate of rise of

off-state voltageVGG=-50V, (see Note 3)-1000 V/µs

COAnode-cathode off-

state capacitancef=1MHz, Vd=0.1V, IG=0, (see Note 4) VD=0V85 pF

VD=-50V10 pF

NOTES: 3. Linear rate of rise, maximum voltage limited to 80% VGG.

4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are a.c. connected to the guard terminal of the bridge.

thermal characteristics

PARAMETERTEST CONDITIONSMINTYPMAXUNIT

RθJAJunction to free air thermal resistancePtot=0.8W,TA=25°C

5cm2, FR4 PCBD Package170 °C/W

P Package125

PARAMETER MEASUREMENT INFORMATION

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC

electrical characteristics, -40°C≤TJ ≤ 85°C (unless otherwise noted) (continued)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT

-v

VGG VD

ITSM

ITSP

V(BO)

I(BO)

Quadrant I

Forward

Conduction

Characteristic

IFSM (= |ITSM|)

IFSP (= |ITSP|)

-i

Quadrant III

Switching

Characteristic PM6XAAA

VGK(BO)

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

DEVICE PARAMETERS

general

Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late

1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As

these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics.

This resulted in the invention of new terms based on the application usage and device characteristic. Initially,

there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced

and stabilised.

Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to

specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted

in a wide diversity of terms to describe the same thing. To help promote an understanding of the terms and

their alternatives, this section has a list of alternative terms and the parameter definitions used for this data

sheet. In general, the Texas Instruments approach is to use terms related to the device internal structure,

rather than its application usage as a single device may have many applications each using a different

terminology for circuit connection.

alternative symbol cross-reference guide

This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in

some cases the alternative symbols have no substance in international standards and are not fully defined by

the originators, users must confirm symbol equivalence. No liability will be assumed from the use of this

guide.

CROSS-REFERENCE FOR TISP61060 AND TCM1030/60

TISP61060 PARAMETERDATA SHEET

SYMBOLALTERNATIVE

SYMBOLALTERNATIVE PARAMETER

RATINGS & CHARACTERISTICSTCM1060, TCM1030

Non-repetitive peak on-state pulse current ITSP-Non-repetitive peak surge current

Non-repetitive peak on-state current ITSM-Non-repetitive peak surge current,10ms

Non-repetitive peak on-state current ITSM-Continuous 60-Hz sinewave, 2s

Forward voltageVFVCFForward clamping voltage

Forward current IFIFMPeak forward current

On-state voltageVTVCReverse clamping voltage

On-state current ITITMPeak reverse current

Switching current ISItripTrip current

Breakover voltageV(BO)VtripTrip voltage

Gate reverse current (with A and K terminals connected)IGASIDStand-by current, TIP & RING at GND

Off-state current IDIDStand-by current, TIP & RING at VS

Off-state voltageVDVSSupply voltage

Gate-cathode breakover voltageVGK(BO)VOSTransient overshoot voltag e

Gate voltage, (VGG is gate supply voltage referenced

to the A terminal)VGVSSupply voltage

Off-state capacitanceCOCoffOff-state capacitance

TERMINALSTCM1060, TCM1030

Cathode 1K1TipTip

Cathode 2K2RingRing

AnodeAGNDGround

GateGVSSupply voltage

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

APPLICATIONS INFORMATION

electrical characteristics

The electrical characteristics of a thyristor overvoltage protector are strongly dependent on junction

temperature, TJ. Hence a characteristic value will depend on the junction temperature at the instant of

measurement. The values given in this data sheet were measured on commercial testers, which generally

minimise the temperature rise caused by testing.

gated protector evolution and characteristics

This section covers three topics. Firstly, it is explained why gated protectors are needed. Second, the

performance of the original IC (integrated circuit) based version is described. Third, the performance

improvements given by the TISP61060 are detailed.

purpose of gated protectors

Fixed voltage thyristor overvoltage protectors have been used since the early 1980s to protect monolithic

SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c.

power contact and induction. As the SLIC was usually powered from a fixed voltage negative supply rail, the

limiting voltage of the protector could also be a fixed value. The TISP1072F3 is a typical example of a fixed

voltage SLIC protector.

SLICs have become more sophisticated. To minimise power consumption, some designs automatically adjust

the supply voltage, VBAT, to a value that is just sufficient to drive the required line current. For short lines the

supply voltage would be set low, but for long lines, a higher supply voltage would be generated to drive

sufficient line current. The optimum protection for this type of SLIC would be given by a protection voltage

which tracks the SLIC supply voltage. This can be achieved by connecting the protection thyristor gate to the

SLIC supply, Figure 2. This gated (programmable) protection arrangement minimises the voltage stress on

the SLIC, no matter what value of supply voltage.

CROSS-REFERENCE FOR TISP61060 AND LB1201AB

TISP61060 PARAMETERDATA SHEET

SYMBOLALTERNATIVE

SYMBOLALTERNATIVE PARAMETER

RATINGS & CHARACTERISTICSLB1201AB

Non-repetitive peak on-state pulse current ITSPIPPulse current

Non-repetitive peak on-state current ITSMIPRMS pulse current, 60 Hz

On-state voltageVTVONOn-state voltage

Switching current ISItTrip current

Breakover voltageV(BO)VTTrip voltage

Maximum continuous on-state current ITMICOn-state current

Maximum continuous forward current IFMICOn-state current

Gate voltage, (VGG is gate supply voltage referenced

to the A terminal)VGVSSupply voltage

Off-state capacitanceCOCOFFOff-state capacitance

TERMINALSLB1201AB

Cathode 1K1TipTip

Cathode 2K2RingRing

AnodeAGNDGround

GateGVSSupply voltage

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

ic based protectors

In 1986, an IC based gated protector was proposed (A 90V Switching Regulator and Lightning Protection

Chip Set, Robert K. Chen, Thomas H. Lerch, Johnathan S. Radovsky, D. Alan Spires, IEEE Solid-State

Circuits Conference, February 20, 1986, pp 178/9 and pp 340/1). Commercially, this resulted in the AT&T

Microelectronics LB1201AB device and the higher current Texas Instruments Inc. TCM1060 device

This implementation consisted of four diodes and two high holding current thyristors. Positive overvoltages on

the line wires are clipped to ground by forward conduction of the wire to ground diodes. Negative

overvoltages are initially clipped close to the SLIC negative supply rail, VBAT, by conduction of the thyristor

cathode-gate and gate series diode. This means that the protection voltage level for slow wave forms will be

about 1.5V lower than the SLIC supply voltage. If sufficient current is available from the overvoltage, then the

thyristor will switch into a low voltage on-state condition. When the thyristor crowbars, the two series gate

diodes prevent the SLIC supply from being shorted to ground via the thyristor gate. As the overvoltage

subsides the high holding current of the crowbar prevents d.c. latchup (see Figure 1).

impulse protection performance

The impulse protection voltage will be the sum of the gate supply (VBAT) and the impulse peak gate-cathode

voltage (VGK(BO)). Capacitor C1 provides the pulse of gate current that occurs during fast rising impulses.

The protection voltage will be increased if there is a long connection between the gate decoupling capacitor,

C1, and the gate terminal. During the initial rise of a fast impulse (e.g. 2/10), the gate current (IG) is the same

as the cathode current (IK). Rates of 70A/µs can cause inductive voltages of 0.7V in 2.5cm of printed wiring

track. To minimise this inductive voltage increase of protection voltage, the length of the capacitor to gate

terminal tracking should be minimised. Inductive voltages in the protector cathode wiring can increase the

protection voltage. These voltages can be minimised by routing the SLIC connection through the protector as

shown in Figure 2.

a.c. protection performance

Figure 2 shows a typical a.c. power cross test circuit. A variable voltage a.c. source is applied to the line card

via 600Ω series resistors. On the line card there are further series resistors R1 and R2. These resistors

provide over-current protection by fusing or going high resistance under high current a.c. conditions.

Figure 3 shows the gate and cathode a.c. power line cross voltage and current wave forms of the IC based

protector. Positive voltages are clipped at about +1V by diode conduction. Negative voltages are clipped to

about -52V as the SLIC supply voltage was -50V. Sufficient current (200mA) was available to cause the

Figure 2. SIMPLIFIED IC BASED SLIC PROTECTOR CIRCUIT

50 ΩΩ

RING

WIRE

TIP

WIRE

Th4

Th5

SLIC

IC BASED

SLIC

PROTECTOR

VBAT

100 nF

AI6XAD

600 ΩΩ

A.C.

GENERATOR

0 - 600 Vrms

SWITCHING MODE

POWER SUPPLY

GENERATOR

SOURCE

RESISTANCE

IBAT

IGISLIC C2

50 ΩΩ

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

thyristor to switch into the low-voltage on-state condition. At the end of the negative half cycle, the thyristor

switches off when the current falls below the holding current value (300mA). Switch-off and re-clipping at

-52V causes a second pulse of gate current. The wire current drawn by the protector is quasi-sinusoidal

During the positive a.c. voltage period (diode clipping) there is no gate current. During the negative a.c.

voltage period there are two triangular pulses of gate current, which peak at about 80mA. This is current

which flows into the gate terminal as indicated by the IG current arrow in Figure 2. This direction of current

charges the VBAT supply. This would not be a problem if the VBAT supply was a rechargeable battery.

However, often the supply is generated from a switching mode power supply or the SLIC supply feed has a

series diode which blocks reverse (charging) current flow to the battery. In these cases the supply can only

sink current in the direction shown by the IBAT arrow in Figure 2. Unless the SLIC current, ISLIC, is equal or

greater than IG the value of VBAT will increase, possibly to a level which causes destruction of the SLIC.

The maximum average value of IG occurs when the thyristor only clips the voltage and the peak cathode

current is just beginning to approach the switching (IS) value, see Figure 4. The average current is maximised

under high source impedance conditions (e.g. 600Ω). In the case of the LB1201AB, it is recommended that

the supply should be able to absorb 700mA of “wrong way” current. If the supply cannot absorb the current

then a shunt breakdown diode is recommended to provided a path for the gate current to ground (D2 in

Figure 2). High power diodes are expensive, so diode D2 is usually low power, purposely selected to fail

under this a.c. condition and protect the SLIC.

Figure 3. IC PROTECTOR POWER CROSS WAVE FORMS

Time - ms

0 5 10 15 20

IK - Cathode Current - mA

-750

-500

-250

250

500

750

- Gate Current - mA

-100

-75

-50

-25

100

Time - ms

0 5 10 15 20

Voltage - V

-60

-50

-40

-30

-20

-10

AI6XAG

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

TISP61060 buffered gate protector

The TISP61060 improves on the original IC based design in three ways, Figure 5. Firstly, the thin lateral IC

structure has been changed to a vertical power device structure for increased area efficiency and greater

Figure 4. IC PROTECTOR HIGH IMPEDANCE POWER CROSS CLIPPING WAVE FORMS

Figure 5. TISP61060 BUFFERED GATE PROTECTOR

Time - ms

0 5 10 15 20

IK - Cathode Current - mA

-300

-200

-100

100

200

300

IG - Gate Current - mA

-100

-80

-60

-40

-20

100

Time - ms

0 5 10 15 20

Voltage - V

-60

-50

-40

-30

-20

-10

AI6XAH

50 ΩΩ

RING

WIRE

TIP

WIRE SLIC

TISP61060

VBAT

100 nF

AI6XAE

600 ΩΩ

A.C.

GENERATOR

0 - 600 Vrms

SWITCHING MODE

POWER SUPPLY

GENERATOR

SOURCE

RESISTANCE

IBAT

IGISLIC C2

50 ΩΩ

Th4

Th5

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

energy capability. Second, the series gate diodes have been changed to transistor buffers. The maximum

current injected into the gate supply is then reduced by the transistors gain factor (HFE). Third, some current

from the positive voltage diode conduction has been diverted to the gate terminal which subtracts from the

normal gate current. In most cases, this allows any previously used SLIC supply rail shunt protection diode to

be removed. Although the SLIC supply is taken to a terminal that is internally connected to transistor bases,

the terminal is still designated as the gate terminal, G.

Figure 6 shows the high impedance a.c. waveforms for the TISP61060. As the TISP61060 replaces the IC

based protector’s gate diode with a transistor, the peak gate current is reduced by over 50 times. In addition

there is a compensating negative gate current flow during diode conduction. The TISP61060 has the

maximum value of peak gate current specified and so allows for designer to design for limit conditions. Most

IC protectors do not specify this parameter. Figure 7 shows the improvement due to the TISP61060. These

plots show the full cycle average gate current against rms a.c. voltage. The IC based protector has a

substantial positive gate current which will always charge the SLIC supply, possibly causing an overvoltage.

The TISP61060 has a negative gate current and so cannot overvoltage the SLIC.

Figure 6. TISP61060 HIGH IMPEDANCE POWER CROSS CLIPPING WAVE FORMS

Time - ms

0 5 10 15 20

IK - Cathode Current - mA

-300

-200

-100

100

200

300

IG - Gate Current - mA

-10

-8

-6

-4

-2

Time - ms

0 5 10 15 20

Voltage - V

-60

-50

-40

-30

-20

-10

AI6XAI

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

circuit component values

The TISP61060 is a functional replacement for three devices, the LB1201, TCM1030 and TCM1060. These

devices have a minimum value of series limiting resistor (R1 and R2 in Figure 2) which will ensure that the

impulse surge current will not exceed the device rated value. This is summarised in the table below.

This table shows that the TISP61060 has impulse ratings which are higher or equal to those of the other three

devices. Similarly, the TISP61060 has a.c. ratings which are higher or equal to those of the other three

devices. A series over-current protector should be included in the wire feed to prevent exceeding the

Figure 7. AVERAGE GATE CURRENT VS A.C. SUPPLY VOLTAGE IN FIGURES 2 AND 5

DEVICE10/1000

1kV, 10 Ω10/160

1.5kV, 7.5Ω2/10

2.5kV, 5 ΩRECCOMMENDED

MIN. SERIES

RESISTANCE Ω

LB1201

ITSP A12.518.5 23

100

MIN. SERIES

RESISTANCE Ω70 73.6104

TCM1030

ITSP A16 25 35

100

MIN. SERIES

RESISTANCE Ω52.552.566.4

TCM1060

ITSP A30 45 50

MIN. SERIES

RESISTANCE Ω23.325.8 45

TISP61060

ITSP A30 45 50

MIN. SERIES

RESISTANCE Ω23.325.8 45

VAC

- RMS Supply Voltage - V

0 100 200 300 400 500

IG(AV) - Average Gate Current - mA

-10

-5

Figure 3. Condition

Figure 6. Condition TISP61060

IC Based Protector

Protector Starting to Crowbar

Figure 4. Condition

AI6XAJ

Figure 2. and Figure 5.

Test Circuits

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

TISP61060 a.c. ratings. As covered earlier, the gate decoupling capacitor should be 100nF and should be

mounted as close to the protector as possible.

application circuit

Figure 8 shows a typical TISP61060 SLIC card protection circuit. The incoming line wires, R and T, connect to

the relay matrix via the series over-current protection. Fusible resistors, fuses and positive temperature

coefficient (PTC) resistors can be used for over-current protection. Resistors will reduce the prospective

current from the surge generator for both the TISP61060 and the ring/test protector. The TISP7xxxF3

protector has the same protection voltage for any terminal pair. This protector is used when the ring generator

configuration maybe ground or battery-backed. For dedicated ground-backed ringing generators, the

TISP3xxxF3 gives better protection as its inter-wire protection voltage is twice the wire to ground value.

Relay contacts 3a and 3b connect the line wires to the SLIC via the TISP61060 protector. The protector gate

reference voltage comes from the SLIC negative supply (VBAT). A 100nF gate capacitor sources the high

gate current pulses caused by fast rising impulses.

Figure 8. TYPICAL APPLICATION CIRCUIT

TEST

RELAY RING

RELAY SLIC

RELAY

TEST

EQUIP-

MENT RING

GENERATOR

S1a

S1b

RING

WIRE

TIP

WIRE Th1

Th2

Th3

Th4

Th5

SLIC

PROTECTOR

RING/TEST

PROTECTION

OVER-

CURRENT

PROTECTION

S2a

S2b

TISP

61060

TISP

3xxxF3

7xxxF3

S3a

S3b

VBAT

100 nF

AI6XAF

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

D008

plastic small-outline package

This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

MECHANICAL DATA

5,21 (0.205)

4,60 (0.181)

NOTES: A. Leads are within 0,25 (0.010) radius of true position at maximum material condition.

B. Body dimensions do not include mold flash or protrusion.

C. Mold flash or protrusion shall not exceed 0,15 (0.006).

D. Lead tips to be planar within ±0,051 (0.002).

1,75 (0.069)

1,35 (0.053)

6,20 (0.244)

5,80 (0.228)

5,00 (0.197)

4,80 (0.189)

D008

8765

432

4,00 (0.157)

3,81 (0.150)

7° NOM

3 Places

7° NOM

4 Places

0,51 (0.020)

0,36 (0.014)

8 Places

Pin Spacing

1,27 (0.050)

(see Note A)

6 Places

1,12 (0.044)

0,51 (0.020)

4° ± 4°

0,79 (0.031)

0,28 (0.011)

0,203 (0.008)

0,102 (0.004)

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES

Designation per JEDEC Std 30:

PDSO-G8

0,50 (0.020)

0,25 (0.010) x 45°NOM

0,229 (0.0090)

0,190 (0.0075)

MDXXAA

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

PRODUCT INFORMATION

P008

plastic dual-in-line package

This dual-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions The package is intended for

insertion in mounting-hole rows on 7,62 (0.300) centers. Once the leads are compressed and inserted,

sufficient tension is provided to secure the package in the board during soldering. Leads require no

additional cleaning or processing when used in soldered assembly.

MECHANICAL DATA

1 2 3 4

87 6 5

10,2 (0.400) MAX

Index

Dot

1,78 (0.070) MAX

4 Places

5,08 (0.200)

MAX

0,51 (0.020)

MIN

2,54 (0.100) T.P.

6 Places

(see Note A)

0,533 (0.021)

0,381 (0.015)

8 Places

3,17 (0.125)

MIN

Seating

Plane

0,36 (0.014)

0,20 (0.008)

8 Places

105°

90°

8 Places

6,60 (0.260)

6,10 (0.240)

7,87 (0.310)

7,37 (0.290)

T.P.

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES

P008 Designation per JEDEC Std 30:

PDIP-T8

NOTE A: Each pin centerline is located within 0,25 (0.010) of its true longitudinal position

MDXXABA

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any

semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the

information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI

deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement

of patents or services described herein. Nor is any license, either express or implied, granted under any patent

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