BZX79-C3V9,113 - NXP - Product.Live

DATA SH EET

Product data sheet

Supersedes data of 1999 May 25

2002 Feb 27

DISCRETE SEMICONDUCTORS

BZX79 series

Voltage regulator diodes

M3D17

2002 Feb 27 2

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX79 series

FEATURES

•Total power dissipation: max. 500 mW

•Two tolerance series: ±2%, and ap pr ox. ±5%

•Working voltage range: nom. 2.4 to 75 V (E24 range)

•Non-repet itive peak reverse power dis sipation:

max. 40 W.

APPLICATIONS

•Low voltage stabilizers or voltage references.

DESCRIPTION

Low-power voltage regulator diodes in hermetically sealed

leaded glass SOD27 (DO-35) packages. The diodes are

available in the normalized E24 ±2% (BZX79-B) and

approx. ±5% (BZX79-C) tolerance range. The series

consists of 37 types with no minal working voltages from

2.4 to 75 V.

Fig.1 Simplified outline (SOD27; DO-35) and

symbol.

The diodes are type branded.

handbook, halfpage

MAM239

LIMITING VALUES

In accordance with the A bsolute Maxi mum Rating System (IEC 60134).

Notes

1. Device mounted o n a printed circuit-board wi thout metalliza tion pad; lead length max.

2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm.

ELECTRICAL CHARACTERISTIC S

Total BZX79-B and BZX79-C series

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −250 mA

IZSM non-repetitive peak reverse current tp = 100 μs; square wave;

Tj = 25 °C prior to surge see Tables 1 and 2 A

Ptot total power dissipation Tamb = 50 °C; note 1 −400 mW

Tamb = 50 °C; note 2 −500 mW

PZSM non-repetitive peak re verse power

dissipation tp = 100 μs; square wave;

Tj = 25 °C prior to surge; see Fig.3 −40 W

Tstg storage temperature −65 +200 °C

Tjjunction temperature −65 +200 °C

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF = 10 mA; see Fig.4 0.9 V

2002 Feb 27 3

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX79 series

IRreverse current

BZX79-B/C2V4 VR = 1 V 50 μA

BZX79-B/C2V7 VR = 1 V 20 μA

BZX79-B/C3V0 VR = 1 V 10 μA

BZX79-B/C3V3 VR = 1 V 5 μA

BZX79-B/C3V6 VR = 1 V 5 μA

BZX79-B/C3V9 VR = 1 V 3 μA

BZX79-B/C4V3 VR = 1 V 3 μA

BZX79-B/C4V7 VR = 2 V 3 μA

BZX79-B/C5V1 VR = 2 V 2 μA

BZX79-B/C5V6 VR = 2 V 1 μA

BZX79-B/C6V2 VR = 4 V 3 μA

BZX79-B/C6V8 VR = 4 V 2 μA

BZX79-B/C7V5 VR = 5 V 1 μA

BZX79-B/C8V2 VR = 5 V 700 nA

BZX79-B/C9V1 VR = 6 V 500 nA

BZX79-B/C10 VR = 7 V 200 nA

BZX79-B/C11 VR = 8 V 100 nA

BZX79-B/C12 VR = 8 V 100 nA

BZX79-B/C13 VR = 8 V 100 nA

BZX79-B/C15 to BZX79-B/C75 VR = 0.7VZnom 50 nA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

2002 Feb 27 4

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX79 series

Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24

Tj = 25 °C unless otherwise specified.

BZX79-

Bxxx

Cxxx

WORKING VOLTAGE

VZ (V)

at IZtest = 5 mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ (mV/K)

at IZtest = 5 mA

(see Figs 5 and 6)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A)

at tp = 100 μs; Tamb = 25 °C

Tol. ±2% (B) Tol. approx.

±5% (C) at IZtest = 1 mA at IZtest = 5 mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

2V4 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0450 6.0

2V7 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0450 6.0

3V0 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0450 6.0

3V3 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0450 6.0

3V6 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0450 6.0

3V9 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0450 6.0

4V3 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0450 6.0

4V7 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0

5V1 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0

5V6 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0

6V2 6.08 6.32 5.8 6.6 40 150 610 0.4 2.3 3.7 200 6.0

6V8 6.66 6.94 6.4 7.2 30 80 615 1.2 3.0 4.5 200 6.0

7V5 7.35 7.65 7.0 7.9 30 80 615 2.5 4.0 5.3 150 4.0

8V2 8.04 8.36 7.7 8.7 40 80 615 3.2 4.6 6.2 150 4.0

9V1 8.92 9.28 8.5 9.6 40 100 615 3.8 5.5 7.0 150 3.0

10 9.80 10.20 9.4 10.6 50 150 820 4.5 6.4 8.0 90 3.0

11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5

12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5

13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5

15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0

16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5

18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5

20 19.60 20.40 18.8 21.2 60 225 15 55 12.3 15.6 18.0 60 1.5

22 21.60 22.40 20.8 23.3 60 250 20 55 14.1 17.6 20.0 60 1.25

24 23.50 24.50 22.8 25.6 60 250 25 70 15.9 19.6 22.0 55 1.25

2002 Feb 27 5

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX79 series

Table 2 Per type, BZX79-B/C27 to BZX79-B/C75

Tj = 25 °C unless otherwise specified.

BZX79-

Bxxx

Cxxx

WORKING VOLTAGE

VZ (V)

at IZtest = 2 mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ (mV/K)

at IZtest = 2 mA

(see Figs 5 and 6)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A)

at tp = 100 μs; Tamb = 25 °C

Tol. ±2% (B) Tol. approx.

±5% (C) at IZtest = 0.5 mA at IZtest = 2 mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

27 26.50 27.50 25.1 28.9 65 300 25 80 18.0 22.7 25.3 50 1.0

30 29.40 30.60 28.0 32.0 70 300 30 80 20.6 25.7 29.4 50 1.0

33 32.30 33.70 31.0 35.0 75 325 35 80 23.3 28.7 33.4 45 0.9

36 35.30 36.70 34.0 38.0 80 350 35 90 26.0 31.8 37.4 45 0.8

39 38.20 39.80 37.0 41.0 80 350 40 130 28.7 34.8 41.2 45 0.7

43 42.10 43.90 40.0 46.0 85 375 45 150 31.4 38.8 46.6 40 0.6

47 46.10 47.90 44.0 50.0 85 375 50 170 35.0 42.9 51.8 40 0.5

51 50.00 52.00 48.0 54.0 90 400 60 180 38.6 46.9 57.2 40 0.4

56 54.90 57.10 52.0 60.0 100 425 70 200 42.2 52.0 63.8 40 0.3

62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3

68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25

75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2

2002 Feb 27 6

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX79 series

THERMAL CHARACTE RISTICS

Note

1. Device mounted on a printed circuit-board without metallization pad.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point lead length 8 mm. 300 K/W

Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W

GRAPHICAL DATA

handbook, full pagewidth

−1

11010

MBG930

tp (ms)

tptp

0.02

0.01

≤0.001

0.75

0.50

0.33

0.20

0.10

0.05

δ = 1

Rth j-a

(K/W)

Fig.2 Thermal resistance from junction to ambien t as a function of pulse duration.

2002 Feb 27 7

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX79 series

Fig.3 Maximum permissible non-repetitive peak

reverse powe r dissipation versus dur ation.

handbook, halfpage

MBG801

103

1 duration (ms)

PZSM

(W)

102

10−1

(1)

(2)

(1) Tj = 25 °C (prior to surge).

(2) Tj = 150 °C (prior to surge).

Fig.4 Typical forward current as a function of

forward voltage.

handbook, halfpage

0.6 1

300

100

200

MBG781

0.8 VF (V)

(mA)

Tj = 25 °C.

Fig.5 Temperature coefficient as a functi on of

working current; typical values.

handbook, halfpage

060

−2

−3

−1

MBG783

20 40 IZ (mA)

(mV/K) 4V3

3V9

3V6

3V0

2V4

2V7

3V3

BZX79-B/C2V4 to BZX79-B/C4V3.

Tj = 25 to 150 °C.

Fig.6 Temperature coefficient as a functi on of

working current; typical values.

handbook, halfpage

02016

−5

MBG782

4812 IZ (mA)

(mV/K)

4V7

9V1

8V2

7V5

6V8 6V2

5V6

5V1

BZX79-B/C4V7 to BZX79-B/C12.

Tj = 25 to 150 °C.

2002 Feb 27 8

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX79 series

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

Note

1. The marking band indicates the cathode.

SOD27 DO-35A24 SC-40 97-06-09

Hermetically sealed glass package; axial leaded; 2 leads SOD27

UNIT b

max.

mm 0.56

max. G1

max.

25.44.251.85

min.

DIMENSIONS (mm are the original dimensions)

LD L

(1)

0 1 2 mm

scale

2002 Feb 27 9

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX79 series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

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STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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Printed in The Netherlands 613514/03/pp10 Date of release: 2002 Feb 27 Document order number: 9397 750 09387