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DATA SH EET
Product data sheet 2003 Dec 03
DISCRETE SEMICONDUCTORS
PMEG2010AEB
20 V, 1 A ultra low VF MEGA
Schottky barrier rectifier in
SOD523 package
M3D319
2003 Dec 03 2
NXP Semiconductors Product data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package PMEG2010AEB
FEATURES
•Forward current: 1. 0 A
•Reverse voltage: 20 V
•Ultra low forward voltage
•Ultra small SMD package.
APPLICATIONS
•Low voltage rectification
•High efficiency DC/ DC conv ersion
•Voltage clamping
•Inverse-polarity protection
•Low power cons ump tion applications.
DESCRIPTION
Planar Maximum Efficiency Ge neral Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOD523 (SC-79) ultra
small plastic SMD packa ge.
QUICK REFERENCE DATA
PINNING
SYMBOL PARAMETER MAX. UNIT
IFforward cu rrent 1 A
VRreverse vo ltage 20 V
PIN DESCRIPTION
1cathode
2anode
1
2
T
op view col001
Fig.1 Simplified outline (SOD523; SC-79) and
symbol.
Marking code: L6.
The marking bar indicates the cathode.
ORDERING INFORMATION
RELATED PRODUCTS
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PMEG2010AEB −plastic surface mounted package; 2 leads SOD523
TYPE DESCRIPTION FEATURE
PMEG2005EB 0.5 A; 20 V very low VF MEGA Schottky rectifier Lower IR in same package
PMEG2010EA 1 A; 20 V very low VF MEGA Schottky rectifier Lower forwar d current, lower IR SOD323
(SC76)
2003 Dec 03 3
NXP Semiconductors Pr oduct data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package PMEG2010AEB
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. For Schottky barrier rec t ifiers, thermal run-away has to be considered, as in some applications the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
THERMAL CHARACTE RISTICS
Notes
1. Refer to SOD523 (SC-79) standard mounting conditions.
2. For Schottky barrier rec t ifiers, thermal run-away has to be considered, as in some applications the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
3. Solder point o f c athode tab.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous revers e voltage −20 V
IFcontinuous forward current Ts ≤ 55 °C−1.0 A
IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.5 −3.5 A
IFSM non-repetitive peak forward current t = 8 ms square wave −6 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature note 1 −150 °C
Tamb operating ambient temperature note 1 −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to
ambient in free air; notes 1 and 2 400 K/W
Rth(j-s) thermal resistance from junction to
soldering point notes 2 and 3 75 K/W
2003 Dec 03 4
NXP Semiconductors Pr oduct data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package PMEG2010AEB
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage IF = 0.1 mA 30 60 mV
IF = 1 mA 80 110 mV
IF = 10 mA 140 190 mV
IF = 100 mA 230 290 mV
IF = 1 000 mA 510 620 mV
IRcontinuous reverse current VR = 10 V; note 1 0.17 0.6 mA
VR = 20 V; note 1 0.32 1.5 mA
Cddiode capacitance VR = 1 V; f = 1 MHz 19 25 pF
2003 Dec 03 5
NXP Semiconductors Pr oduct data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package PMEG2010AEB
GRAPHICAL DATA
com001
1
10
102
103
IF
(mA)
10−1
VF (V)
0 0.80.60.2 0.4
(1) (2) (3)
Fig.2 Forward current as a function of forward
voltage; typical values.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
handbook, halfpage MLE228
0816
VR (V)
IR
(μA)
24
105
104
103
102
10
1
10−1
(1)
(2)
(3)
Fig.3 Reverse current as a fun ction of reverse
voltage; typical values.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
VR (V)
02015510
com002
10
20
25
15
5
30
Cd
(pF)
0
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb = 25 °C.
2003 Dec 03 6
NXP Semiconductors Pr oduct data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package PMEG2010AEB
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD523V SC-79 00-12-07
02-04-19
P
lastic surface mounted package; 2 leads SOD523
V
0 0.5 1 mm
scale
D
12
HE
Ebp
A
c
vMA
A
UNIT bpcDEv
mm 0.34
0.26 0.17
0.11 0.1
0.85
0.75
1.25
1.15
A
0.65
0.58
HE
1.65
1.55
DIMENSIONS (mm are the original dimensions)
Note
1. The marking bar indicates the cathode.
(1)
2003 Dec 03 7
NXP Semiconductors Pr oduct data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package PMEG2010AEB
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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does not give any representations or warranties,
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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case of any incons istency or conflict betw een information
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may be interpreted or construed as an offer to sell products
that is open for accept ance or the grant, c onveyance or
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document does not form part of any q uot ation or co nt ra ct, is believed to be accurate a nd re li a ble and may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands R76/01/pp8 Date of release: 2003 Dec 03 Document order number: 9397 750 11911
