MMBT4124
Document number: DS30105 Rev. 11 - 2 1 of 3
www.diodes.com January 2009
© Diodes Incorporated
MMBT4124
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMBT4126)
• Ideal for Medium Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant
• "Green" Device (Notes 2 and 4)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current - Continuous (Note 1) IC 200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1) PD 300 mW
Thermal Resistance, Junction to Ambient (Note 1) R
θ
JA 417 °C/W
Operating and Storage and Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage V
(
BR
)
CBO 30 ⎯ V IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage V
(
BR
)
CEO 25 ⎯ V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V
(
BR
)
EBO 5.0 ⎯ V IE = 10μA, IC = 0
Collector Cutoff Current ICBO ⎯ 50 nA VCB = 20V, IE = 0V
Emitter Cutoff Current IEBO ⎯ 50 nA VEB = 3.0V, IC = 0V
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE 120
60 360
⎯ ⎯ IC = 2.0mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE
(
SAT
)
⎯ 0.30 V IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE
(
SAT
)
⎯ 0.95 V IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ⎯ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Small Signal Current Gain hfe 120 480 ⎯ VCE = 1.0V, IC = 2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 10mA,
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Top View Device Schematic
E
B
C
MMBT4124
Document number: DS30105 Rev. 11 - 2 2 of 3
www.diodes.com January 2009
© Diodes Incorporated
MMBT4124
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
A
150
200
250
300
350
400
0
RC/W
θ
JA
°
= 417
1
10
1,000
100
0.1 110 1,000100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
0.01
0.1
1
0.1 1 10 100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig . 3 Ty pi cal Col l ect or - Emi t te r Saturat ion Volta ge
vs. C ollector Cu r rent
C
I
C
I
B
= 10
0.1
1
10
0.1 1 10 100 1,000
V , BASE -EM I
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E (V)
BE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitter Saturation V oltage
vs. Col lecto r Cu r rent
C
I
I
C
B
= 10
0
5
1
5
10
0.1 110 100
C
A
P
A
C
I
T
AN
C
E (p
F
)
V , REVERSE VOL TAGE (V)
Fig. 5 Typical Capacitance Characteristics
R
C
ibo
C
obo
f = 1MHz
MMBT4124
Document number: DS30105 Rev. 11 - 2 3 of 3
www.diodes.com January 2009
© Diodes Incorporated
MMBT4124
Ordering Information (Note 5)
Part Number Case Packaging
MMBT4124-7-F SOT-23 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code J K L M N P R S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Package Outline Dimensions
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
SOT-23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
K1B = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
K1B
YM
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
