BC107,A,B
BC108B,C
BC109B,C
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC107, BC108,
BC109 series types are small signal NPN silicon
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL BC107 BC108 BC109 UNITS
Collector-Base Voltage VCBO 50 30 30 V
Collector-Emitter Voltage VCEO 45 25 25 V
Emitter-Base Voltage VEBO 6.0 5.0 5.0 V
Continuous Collector Current IC 200 mA
Power Dissipation PD 600 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 175 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=45V (BC107) 15 nA
ICBO V
CB=45V, TA=125°C (BC107) 4.0 μA
ICBO V
CB=25V (BC108, BC109) 15 nA
ICBO V
CB=25V, TA=125°C (BC108, BC109) 4.0 μA
BVCEO I
C=2.0mA (BC107) 45 V
BVCEO I
C=2.0mA (BC108, BC109) 25 V
BVEBO I
E=10μA (BC107) 6.0 V
BVEBO I
E=10μA (BC108, BC109) 5.0 V
VCE(SAT) I
C=10mA, IB=0.5mA 0.25 V
VCE(SAT) I
C=100mA, IB=5.0mA 0.6 V
VBE(SAT) I
C=10mA, IB=0.5mA 0.7 0.83 V
VBE(SAT) I
C=100mA, IB=5.0mA 1.0 1.05 V
VBE(ON) V
CE=5.0V, IC=2.0mA 0.55 0.7 V
VBE(ON) V
CE=5.0V, IC=10mA 0.77 V
hFE V
CE=5.0V, IC=10μA (BC107B, BC108B, BC109B) 40
hFE V
CE=5.0V, IC=10μA (BC108C, BC109C) 100
hFE V
CE=5.0V, IC=2.0mA (BC107) 110 450
hFE V
CE=5.0V, IC=2.0mA (BC107A) 110 220
hFE V
CE=5.0V, IC=2.0mA (BC107B, BC108B, BC109B) 200 450
hFE V
CE=5.0V, IC=2.0mA (BC108C, BC109C) 420 800
TO-18 CASE
R1 (16-August 2012)
www.centralsemi.com
BC107,A,B
BC108B,C
BC109B,C
NPN SILICON TRANSISTOR
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-18 CASE - MECHANICAL OUTLINE
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
hfe V
CE=5.0V, IC=2.0mA, f=1.0kHz (BC107) 125 500
hfe V
CE=5.0V, IC=2.0mA, f=1.0kHz (BC107A) 125 260
hfe V
CE=5.0V, IC=2.0mA, f=1.0kHz (BC107B, BC108B, BC109B) 240 500
hfe V
CE=5.0V, IC=2.0mA, f=1.0kHz (BC108C) 500
hfe V
CE=5.0V, IC=2.0mA, f=1.0kHz (BC109C) 450 900
fT V
CE=5.0V, IC=10mA, f=100MHz 150 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 4.5 pF
NF VCE=5.0V, IC=0.2mA, Rg=2.0kΩ, B=200Hz, f=1.0kHz (BC107, BC108) 10 dB
NF VCE=5.0V, IC=0.2mA, Rg=2.0kΩ, B=200Hz, f=1.0kHz (BC109) 4.0 dB
www.centralsemi.com
R1 (16-August 2012)
