2010-06-28
1
BC846...-BC850...
NPN Silicon AF Transistors
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types:
BC856...-BC860...(PNP)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
1Pb-containing package may be available upon special request
2010-06-28
2
BC846...-BC850...
Type Marking Pin Configuration Package
BC846A
BC846B
BC846BW
BC847A
BC847B
BC847BF*
BC847BL3
BC847BW
BC847C
BC847CW
BC848A
BC848B
BC848BL3
BC848BW
BC848C
BC848CW
BC849B
BC849C
BC849CW
BC850B
BC850BW
BC850C
BC850CW
1As
1Bs
1Bs
1Es
1Fs
1Fs
1F
1Fs
1Gs
1Gs
1Js
1Ks
1K
1Ks
1Ls
1Ls
2Bs
2Cs
2Cs
2Fs
2Fs
2Gs
2Gs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
SOT23
SOT323
SOT23
SOT23
TSFP-3
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
* Not for new design
2010-06-28
3
BC846...-BC850...
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
VCEO
65
45
30
V
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
VCES
80
50
30
Collector-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
VCBO
80
50
30
Emitter-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
VEBO
6
6
6
Collector current IC100 mA
Peak collector current, tp ≤ 10 ms ICM 200
Total power dissipation-
TS ≤ 71 °C, BC846-BC850
TS ≤ 128 °C, BC847F
TS ≤ 135 °C, BC847L3-BC848L3
TS ≤ 124 °C, BC846W-BC850W
Ptot
330
250
250
250
mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BC846-BC850
BC847F
BC847L3-BC848L3
BC846W-BC850W
RthJS
≤ 240
≤ 90
≤ 60
≤ 105
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
2010-06-28
4
BC846...-BC850...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC846...
IC = 10 mA, IB = 0 , BC847..., BC850...
IC = 10 mA, IB = 0 , BC848..., BC849...
V(BR)CEO
65
45
30
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC846...
IC = 10 µA, IE = 0 , BC847..., BC850...
IC = 10 µA, IE = 0 , BC848..., BC849...
V(BR)CBO
80
50
30
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 0 , IC = 10 µA
V(BR)EBO - 6 -
Collector-base cutoff current
VCB = 45 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
-
0.015
5
-
-
µA
DC current gain1)
IC = 10 µA, VCE = 5 V, hFE-grp.A
IC = 10 µA, VCE = 5 V, hFE-grp.B
IC = 10 µA, VCE = 5 V, hFE-grp.C
IC = 2 mA, VCE = 5 V, hFE-grp.A
IC = 2 mA, VCE = 5 V, hFE-grp.B
IC = 2 mA, VCE = 5 V, hFE-grp.C
hFE
-
-
-
110
200
420
140
250
480
180
290
520
-
-
-
220
450
800
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
-
-
90
200
250
600
mV
Base emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
-
-
700
900
-
-
Base-emitter voltage1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
580
-
660
-
700
770
1Pulse test: t < 300µs; D < 2%
2010-06-28
5
BC846...-BC850...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT- 250 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 0.95 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - 9 -
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
h11e
-
-
-
2.7
4.5
8.7
-
-
-
kΩ
Open-circuit reverse voltage transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
h12e
-
-
-
1.5
2
3
-
-
-
10-4
Short-circuit forward current transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
h21e
-
-
-
200
330
600
-
-
-
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
h22e
-
-
-
18
30
60
-
-
-
µS
Noise figure
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ, BC849..., BC850...
F- 1.2 4 dB
Equivalent noise voltage
IC = 200 µA, VCE = 5 V, RS = 2 kΩ,
f = 10 ... 50 Hz , BC850...
Vn- - 0.135 µV
2010-06-28
6
BC846...-BC850...
DC current gain hFE = ƒ(IC)
VCE = 5 V
10 10 10 10
EHP00365
h
mA
-2 -1 12
FE
3
10
10
2
0
10
5
5
10
1
0
10
5
555
100
25
-50
Ι
C
C
C
C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 20
10 0
EHP00367
VCEsat
10
mA
10
Ι
C
10
2
1
0
-1
5
5
V
0.3 0.5
100
25
-50
0.1 0.2 0.4
C
C
C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 20
0
10
EHP00364
BEsat
V
0.6 V 1.2
-1
10
0
10
1
2
10
5
5
Ι
C
mA
0.2 0.4 0.8
C
25
C
100
C
-50
C
Collector cutoff current ICBO = ƒ(TA)
VCB = 30 V
10 0 50 100 150
EHP00415
T
A
10
nA
10
Ι
CB0
10
10
4
3
2
1
0
max
typ
5
5
5
˚C
2010-06-28
7
BC846...-BC850...
Transition frequency fT = ƒ(IC)
VCE = 5 V
10 10 10 10
EHP00363
f
mA
MHz
-1 0 1 2
5
T
3
10
102
1
10
5
5
5
Ι
C
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB/VEB
0
1
2
3
4
5
6
7
8
9
10
11
pF
13
CCB/CEB
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
BC846-BC850
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Total power dissipation Ptot = ƒ(TS)
BC847BF
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
2010-06-28
8
BC846...-BC850...
Total power dissipation Ptot = ƒ(TS)
BC847BL3/BC848BL3
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Total power dissipation Ptot = ƒ(TS)
BC846W-BC850W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BC846/W-BC850/W
10
EHP00362
-6
0
10
5
D
=
5
101
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
DT
t
p
T
totmax
tot
PDC
P
p
t
Permissible Puls Load RthJS = ƒ (tp)
BC847BF
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
K/W
RthJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
2010-06-28
9
BC846...-BC850...
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BC847BF
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
Ptotmax/PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BC847BL3, BC848BL3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BC847BL3, BC848BL3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
Ptotmax/ PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Noise figure F = ƒ(VCE)
IC = 0.2mA, RS = 2kΩ , f = 1kHz
0
10 10 10 10
BC 846...850 EHP00370
V
CE
F
V
10
5
15
dB
20
-1 0 1 2
5
2010-06-28
10
BC846...-BC850...
Noise figure F = ƒ(f)
IC = 0.2 mA, VCE = 5V, RS = 2 kΩ
10 10 10 10
BC 846...850 EHP00371
F
kHz
dB
-2 -1 1 2
20
10
0
5
15
f
0
10
Noise figure F = ƒ(IC)
VCE = 5V, f = 120Hz
10 10 10 10
BC 846...850 EHP00372
F
mA
-3 -2 0 1
20
10
0
5
15
-1
10
= 1 M 100 k 10 k
dB
500
1 k
ΩΩΩ
S
R
Ω
Ω
C
Ι
Noise figure F = ƒ(IC)
VCE = 5V, f = 1kHz
10 10 10 10
BC 846...850 EHP00373
F
mA
-3 -2 0 1
20
10
0
5
15
-1
10
= 1 M
100 k
10 k
dB
500
1 k
ΩΩΩ
S
R
Ω
Ω
C
Ι
Noise figure F = ƒ(IC)
VCE = 5V, f = 10kHz
10 10 10 10
BC 846...850 EHP00374
F
mA
-3 -2 0 1
20
10
0
5
15
-1
10
= 1 M
100 k
10 k
dB
500
1 k
Ω
Ω
Ω
S
R
Ω
Ω
C
Ι
2010-06-28
11
BC846...-BC850...
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25 MBC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2010-06-28
12
BC846...-BC850...
Package SOT323
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
±0.1
0.9
12
3
A
±0.2
2
-0.05
0.650.65
M
3x
0.1
0.1 MIN.
0.1
M
0.2 A
0.2
4
2.15 1.1
8
2.3
Pin 1
Pin 1
2005, June
Date code (YM)
BCR108W
Type code
0.6
0.8
1.6
0.65
0.65
Manufacturer
2010-06-28
13
BC846...-BC850...
Package TSFP-3
4
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
±0.05
0.2
3
±0.05
1.2
12
10˚ MAX.
±0.05
0.8
1.2±0.05
±0.04
0.55
±0.05
0.2
±0.05
0.15
±0.05
0.2
0.4
±0.05
0.4
±0.05
0.4
0.45
1.05
0.4 0.4
BCR847BF
Type code
Pin 1
0.2
1.35
0.3
0.7
1.2
1.5
8
Pin 1
Manufacturer
2010-06-28
14
BC846...-BC850...
Package TSLP-3-1
2
3
1
0.4
+0.1
BFR193L3
Type code
Pin 1 marking
Laser marking
0.76
4
1.16
0.5
Pin 1
marking
8
Reel ø180 mm = 15.000 Pieces/Reel
For board assembly information please refer to Infineon website "Packages"
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Stencil aperturesCopper Solder mask
0.275
0.2
0.315
0.945
0.45
0.17
0.355
0.2
0.35
0.225
1
0.6
0.225
0.15
0.35
0.3
R0.1
1
2
±0.05
0.35
±0.035
2x 0.15
1)
Top view Bottom view
1) Dimension applies to plated terminal
±0.035
0.5
1)
±0.05
0.6
3
±0.05
0.65
±0.035
2x
0.25
1)
±0.035
0.25
1)
1
±0.05
Pin 1
marking
0.05 MAX.
2010-06-28
15
BC846...-BC850...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ( <www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
