BSL314PE
OptiMOS™-P 3 Small-Signal-Transistor
Features
• Dual P-channel
• Enhancement mode
• Logic level (4.5V rated)
• ESD protected
• Qualified according AEC Q101
• 100% Lead-free; RoHS compliant
• Halogen free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter 1) Symbol Conditions Unit
Continuous drain current
IDTA=25 °C -1.5 A
TA=70 °C -1.2
Pulsed drain current
ID,pulse TA=25 °C -6.1
Avalanche energy, single pulse
EAS ID=-1.5 A, RGS=25 W6mJ
Reverse diode dv/dtdv/dt
ID=-1.5 A,
VDS=-16 V,
di/dt=-200A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage
VGS ±20 V
Power dissipation2) Ptot TA=25 °C W
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
ESD Class
JESD22-A114 -HBM 1000V to 2000V
Soldering Temperature 260 °C °C
IEC climatic category; DIN IEC 68-1 55/150/56 °C
1) Remark: one of both trainsistors in operation.
Value
0.5
PG-TSOP-6
3
1
2
VDS
30
RDS(on),max
VGS=-10 V
140
mW
VGS=-4.5 V
230
ID
-1.5
Product Summary
Type
Package
Tape and Reel Information
Marking
Lead Free
Packing
BSL314PE
PG-TSOP-6
H6327: 3000 pcs/ reel
sPT
Yes
Non dry
4
5
6
Rev 2.3 page 1 2013-11-07
BSL314PE
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient
RthJA minimal footprint 2) - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS= 0V, ID=-250µA -30 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=-6.3µA -1 -1.5 -2
Drain-source leakage current
IDSS
VDS=-30V, VGS=0 V,
Tj=25 °C
- - -1
mA
VDS=-30V, VGS=0V,
Tj=150 °C
- - -100
Gate-source leakage current
IGSS VGS=-20V, VDS=0V - - -5 μA
Drain-source on-state resistance
RDS(on) VGS=-4.5V,
ID=-1.2A -153 230 mW
VGS=-10V, ID=-1.5A -107 140
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=-1.2 A
3 - S
Values
2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB.
Rev 2.3 page 2 2013-11-07
BSL314PE
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -221 294 pF
Output capacitance
Coss -126 168
Reverse transfer capacitance
Crss - 7 11
Turn-on delay time
td(on) -5.1 -ns
Rise time
tr-3.9 -
Turn-off delay time
td(off) -12.4 -
Fall time
tf-2.8 -
Gate Charge Characteristics
Gate to source charge
Qgs - -0.7 - nC
Gate to drain charge
Qgd - -0.3 -
Gate charge total
Qg- -2.9 -
Gate plateau voltage
Vplateau - -3.2 - V
Reverse Diode
Diode continous forward current IS- - -0.5 A
Diode pulse current
IS,pulse - - -6.1
Diode forward voltage
VSD
VGS=0 V, IF=-1.5A,
Tj=25 °C
-0.8 1.1 V
Reverse recovery time
trr -12.5 -ns
Reverse recovery charge
Qrr -4.3 -nC
VR=-15 V, IF=-1.5A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V,
VDS=-15 V, f=1 MHz
VDD=-15V,
VGS=-10 V,
ID=-1.5 A, RG,ext=6 W
VDD=-15 V,
ID=-1.5 A,
VGS=0 to -10 V
Rev 2.3 page 3 2013-11-07
BSL314PE
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≤-10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-2
10-1
100
101
102
10-4
10-3
10-2
10-1
100
101
ID [A]
VDS [V]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
101
10-1
100
101
102
ZthJA [K/W]
tp [s]
0
0.125
0.25
0.375
0.5
0 40 80 120 160
Ptot [W]
TA [°C]
0
0.4
0.8
1.2
1.6
0 20 40 60 80 100 120 140 160
ID [A]
TA [°C]
Rev 2.3 page 4 2013-11-07
BSL314PE
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
0
1
2
3
4
5
6
7
8
0 1 2 3 4 5 6 7 8
gfs [S]
ID [A]
2.8 V
3 V
3.3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
1
2
3
4
5
6
7
8
0 1 2 3 4 5
ID [A]
VDS [V]
3 V
3.3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
50
100
150
200
250
300
350
400
0 1 2 3 4 5 6 7 8
RDS(on) [mW]
ID [A]
25 °C
150 °C
0
1
2
3
4
5
6
0 1 2 3 4 5
ID [A]
VGS [V]
Rev 2.3 page 5 2013-11-07
BSL314PE
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=-1.5 A; VGS=-10 V VGS(th)=f(Tj); VDS=VGS; ID=-6.3 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0
50
100
150
200
250
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
typ
98 %
2 %
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
100
101
102
103
0 5 10 15 20
C [pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-3
10-2
10-1
100
101
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
IF [A]
VSD [V]
Rev 2.3 page 6 2013-11-07
BSL314PE
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=-1.5 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=-250 µA
27
28
29
30
31
32
33
-60 -20 20 60 100 140
VBR(DSS) [V]
Tj [°C]
4 V
10 V
16 V
0
2
4
6
8
10
12
0 1 2 3
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
100
101
102
103
10-1
100
101
IAV [A]
tAV [µs]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
Rev 2.3 page 7 2013-11-07
BSL314PE
Package Outline:
Footprint: Packaging:
Dimensions in mm
TSOP-6
Rev 2.3 page 8 2013-11-07
BSL314PE
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
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Rev 2.3 page 9 2013-11-07