IXTH1N250 High Voltage Power MOSFET VDSS ID25 RDS(on) = 2500V = 1.5A 40 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2500 V VDGR TJ = 25C to 150C, RGS = 1M 2500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 1.5 A IDM TC = 25C, Pulse Width Limited by TJM 6 A PD TC = 25C 250 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 C C 1.13 / 10 Nm/lb.in. 6 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Md Mounting Torque Weight G D Tab S G = Gate S = Source D = Drain Tab = Drain Features z z z z International Standard Package Molding Epoxies Weet UL 94 V-0 Flammability Classification Fast Intrinsic Diode Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 2500 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = 0.8 * VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 TJ = 125C (c) 2010 IXYS CORPORATION, All Rights Reserved V Applications V z 100 nA z 4.0 25 z Easy to Mount Space Savings High Power Density 25 A A 40 z High Voltage Power Supplies Capacitor Discharge Pulse Circuits DS99761B(10/10) IXTH1N250 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 50V, ID = 0.5A, Note 1 1.0 Ciss Coss 1.8 mS 1660 pF 77 pF 23 pF 69 ns 25 ns 132 ns 39 ns 41 nC 8 nC 16 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 1A RG = 5 (External) Qg(on) Qgs TO-247 (IXTH) Outline VGS = 10V, VDS = 600V, ID = 0.5A Qgd 0.50 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 1A, VGS = 0V, Note 1 trr IF = 1A, -di/dt = 100A/s, VR = 200V Note 1.5 A 6 A 1.5 V 2.5 1 2 P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 s 1. Pulse test, t 300s, duty cycle, d 2%. *Additional provisions for lead to lead voltage isolation are required at VDS > 1200V. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH1N250 Fig. 2. Output Characteristics @ T J = 125C Fig. 1. Output Characteristics @ T J = @ 25C 1 1 VGS = 10V 0.8 0.8 5V 0.7 5V 0.7 ID - Amperes ID - Amperes VGS = 10V 0.9 0.9 0.6 0.5 0.4 0.6 0.5 4V 0.4 0.3 0.3 0.2 0.2 4V 0.1 0.1 0 0 0 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 60 70 80 90 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current 2.4 2.6 VGS = 10V VGS = 10V 2.2 R DS(on) - Normalized R DS(on) - Normalized 2.2 1.8 I D = 1A 1.4 I D = 0.5A 1.0 TJ = 125C 2.0 1.8 1.6 1.4 1.2 0.6 TJ = 25C 1.0 0.8 0.2 -50 -25 0 25 50 75 100 125 0 150 0.1 0.2 0.3 TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature 0.5 0.6 0.7 0.8 0.9 1 Fig. 6. Input Admittance 1.6 0.9 1.4 0.8 0.7 ID - Amperes 1.2 ID - Amperes 0.4 ID - Amperes 1 0.8 0.6 0.6 0.5 0.4 TJ = 125C 25C - 40C 0.3 0.4 0.2 0.2 0.1 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade (c) 2010 IXYS CORPORATION, All Rights Reserved 100 125 150 2.8 3.0 3.2 3.4 3.6 3.8 4.0 VGS - Volts 4.2 4.4 4.6 4.8 5.0 IXTH1N250 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 3 3 TJ = - 40C 2.5 2.5 2 2 IS - Amperes g f s - Siemens 25C 125C 1.5 1.5 TJ = 125C 1 1 0.5 0.5 0 TJ = 25C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.3 0.4 0.5 ID - Amperes Fig. 9. Gate Charge 0.7 0.8 0.9 Fig. 10. Capacitance 10 10,000 f = 1MHz VDS = 600V 9 I D = 500mA 8 Capacitance - PicoFarads I G = 10mA 7 VGS - Volts 0.6 VSD - Volts 6 5 4 3 Ciss 1,000 Coss 100 2 1 Crss 0 10 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Forward-Bias Safe Operating Area @ T C = 25C @ T C = 75C 10 10 RDS(on) Limit RDS(on) Limit 25s 25s 100s 1 ID - Amperes ID - Amperes 100s 1 1ms 10ms 100ms 0.1 1ms 10ms 0.1 100ms DC 0.01 100 TJ = 150C TJ = 150C TC = 25C Single Pulse TC = 75C Single Pulse 1,000 10,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 100 DC 1,000 VDS - Volts 10,000 IXTH1N250 Fig. 13. Maximum Transient Thermal Impedance Z (th )J C - C / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1N250 (5P)10-25-10-D