BC817-16WT/R - NXP Semiconductors / Philips Semiconductors

1. Product proﬁle

1.1 General description

NPN general-purpose transistors.

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

■High current

■Low voltage

1.3 Applications

■General-purpose switching and ampliﬁcation

1.4 Quick reference data

[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Rev. 05 — 21 January 2005 Product data sheet

Table 1: Product overview

Type number Package PNP complement

Philips JEITA

BC817 SOT23 - BC807

BC817W SOT323 SC-70 BC807W

BC337[1] SOT54 (TO-92) SC-43A BC327

Table 2: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base;

IC=10mA --45V

ICcollector current (DC) - - 500 mA

ICM peak collector current - - 1 A

hFE DC current gain IC = 100 mA;

VCE =1V [1] ---

BC817; BC817W; BC337 100 - 600

BC817-16; BC817-16W; BC337-16 100 - 250

BC817-25; BC817-25W; BC337-25 160 - 400

BC817-40; BC817-40W; BC337-40 250 - 600

Product data sheet Rev. 05 — 21 January 2005 2 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

2. Pinning information

Table 3: Pinning

Pin Description Simpliﬁed outline Symbol

SOT23

1 base

2 emitter

3 collector

SOT323

1 base

2 emitter

3 collector

SOT54

1 emitter

2 base

3 collector

SOT54A

1 emitter

2 base

3 collector

SOT54 variant

1 emitter

2 base

3 collector

SOT23

sym021

sot323_so

sym021

001aab347

sym026

001aab348

sym026

001aab447

sym026

Product data sheet Rev. 05 — 21 January 2005 3 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

3. Ordering information

[1] Valid for all available selection groups.

[2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 4: Ordering information

Type number[1] Package

Name Description Version

BC817 - plastic surface mounted package; 3 leads SOT23

BC817W SC-70 plastic surface mounted package; 3 leads SOT323

BC337[2] SC-43A plastic single-ended leaded (through hole) package;

3 leads SOT54

Table 5: Marking codes

Type number Marking code[1]

BC817 6D*

BC817-16 6A*

BC817-25 6B*

BC817-40 6C*

BC817W 6D*

BC817-16W 6A*

BC817-25W 6B*

BC817-40W 6C*

BC337 C337

BC337-16 C33716

BC337-25 C33725

BC337-40 C33740

Product data sheet Rev. 05 — 21 January 2005 4 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

5. Limiting values

[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2] Valid for all available selection groups.

6. Thermal characteristics

[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2] Valid for all available selection groups.

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base;

IC=10mA -45V

VEBO emitter-base voltage open collector - 5 V

ICcollector current (DC) - 500 mA

ICM peak collector current - 1 A

IBM peak base current - 200 mA

Ptot total power dissipation

BC817 Tamb ≤ 25 °C[1] [2] - 250 mW

BC817W Tamb ≤ 25 °C[1] [2] - 200 mW

BC337 Tamb ≤ 25 °C[1] [2] - 625 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Table 7: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient

BC817 Tamb ≤ 25 °C[1] [2] - - 500 K/W

BC817W Tamb ≤ 25 °C[1] [2] - - 625 K/W

BC337 Tamb ≤ 25 °C[1] [2] - - 200 K/W

Product data sheet Rev. 05 — 21 January 2005 5 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

7. Characteristics

[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

[2] VBE decreases by approximately 2 mV/K with increasing temperature.

Table 8: Characteristics

amb

= 25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off current IE = 0 A; VCB = 20 V - - 100 nA

IE = 0 A; VCB = 20 V;

Tj= 150 °C--5µA

IEBO emitter-base cut-off current IC = 0 A; VEB = 5 V - - 100 nA

hFE DC current gain IC = 100 mA; VCE = 1 V [1]

BC817; BC817W; BC337 100 - 600

BC817-16; BC817-16W;

BC337-16 100 - 250

BC817-25; BC817-25W;

BC337-25 160 - 400

BC817-40; BC817-40W;

BC337-40 250 - 600

hFE DC current gain IC = 500 mA; VCE = 1 V [1] 40 - -

VCEsat collector-emitter saturation

voltage IC = 500 mA; IB = 50 mA [1] - - 700 mV

VBE base-emitter voltage IC = 500 mA; VCE = 1 V [2] - - 1.2 V

Cccollector capacitance IE = ie = 0 A; VCB = 10 V;

f=1MHz -3-pF

fTtransition frequency IC = 10 mA; VCE = 5 V;

f = 100 MHz 100 - - MHz

Product data sheet Rev. 05 — 21 January 2005 6 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

VCE = 1 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

VCE = 1 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

Fig 1. Selection -16: DC current gain as a function of

collector current; typical values. Fig 2. Selection -25: DC current gain as a function of

collector current; typical values.

VCE = 1 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

Fig 3. Selection -40: DC current gain as a function of collector current; typical values.

006aaa131

200

100

300

400

hFE

IC (mA)

10−1103

102

110

(1)

(2)

(3)

006aaa132

400

200

600

hFE

IC (mA)

10−1103

102

110

(1)

(2)

(3)

006aaa133

400

200

600

800

hFE

IC (mA)

10−1103

102

110

(1)

(2)

(3)

Product data sheet Rev. 05 — 21 January 2005 7 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

IC/IB = 10.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

IC/IB = 10.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

Fig 4. Selection -16: Base-emitter saturation voltage

as a function of collector current; typical

values.

Fig 5. Selection -25: Base-emitter saturation voltage

as a function of collector current; typical

values.

IC/IB = 10.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values.

006aaa134

IC (mA)

10−1103

102

110

VBEsat

(V)

10−1

(1)

(2)

(3)

006aaa135

IC (mA)

10−1103

102

110

VBEsat

(V)

10−1

(1)

(2)

(3)

006aaa136

IC (mA)

10−1103

102

110

VBEsat

(V)

10−1

(1)

(2)

(3)

Product data sheet Rev. 05 — 21 January 2005 8 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

Fig 7. Selection -16: Collector-emitter saturation

voltage as a function of collector current;

typical values.

Fig 8. Selection -25: Collector-emitter saturation

voltage as a function of collector current;

typical values.

IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

Fig 9. Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values.

006aaa137

IC (mA)

10−1103

102

110

10−1

VCEsat

(V)

10−2

(1) (2)

(3)

006aaa138

10−1

10−2

VCEsat

(V)

10−3

IC (mA)

10−1103

102

110

(1)

(2)

(3)

006aaa139

10−1

10−2

VCEsat

(V)

10−3

IC (mA)

10−1103

102

110

(1)

(2)

(3)

Product data sheet Rev. 05 — 21 January 2005 9 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Tamb = 25 °C.

(1) IB = 16.0 mA.

(2) IB = 14.4 mA.

(3) IB = 12.8 mA.

(4) IB = 11.2 mA.

(5) IB = 9.6 mA.

(6) IB = 8.0 mA.

(7) IB = 6.4 mA.

(8) IB = 4.8 mA.

(9) IB = 3.2 mA.

(10) IB = 1.6 mA.

Tamb = 25 °C.

(1) IB = 13.0 mA.

(2) IB = 11.7 mA.

(3) IB = 10.4 mA.

(4) IB = 9.1 mA.

(5) IB = 7.8 mA.

(6) IB = 6.5 mA.

(7) IB = 5.2 mA.

(8) IB = 3.9 mA.

(9) IB = 2.6 mA.

(10) IB = 1.3 mA.

Fig 10. Selection -16: Collector current as a function of

collector-emitter voltage; typical values. Fig 11. Selection -25: Collector current as a function of

collector-emitter voltage; typical values.

VCE (V)

054231

006aaa140

0.4

0.8

1.2

(A)

(6)

(7)

(8)

(9)

(10)

(1)(2)(3)(4)

(5)

VCE (V)

054231

006aaa141

0.4

0.8

1.2

(A)

(7)

(8)

(9)

(10)

(1)(2)

(3)(4)

(5)(6)

Product data sheet Rev. 05 — 21 January 2005 10 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Tamb = 25 °C.

(1) IB = 12.0 mA.

(2) IB = 10.8 mA.

(3) IB = 9.6 mA.

(4) IB = 8.4 mA.

(5) IB = 7.2 mA.

(6) IB = 6.0 mA.

(7) IB = 4.8 mA.

(8) IB = 3.6 mA.

(9) IB = 2.4 mA.

(10) IB = 1.2 mA.

Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values.

VCE (V)

054231

006aaa142

0.4

0.8

1.2

(A)

(7)

(8)

(9)

(10)

(1)(2)

(3)(4)

(5)(6)

Product data sheet Rev. 05 — 21 January 2005 11 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

8. Package outline

Fig 13. Package outline SOT23 (TO-236AB).

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

99-09-13

04-11-04

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

Product data sheet Rev. 05 — 21 January 2005 12 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Fig 14. Package outline SOT323 (SC-70).

UNIT A1

max bpcD Ee1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10 2.2

1.8 1.35

1.15 0.65

1.3 2.2

2.0 0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; 3 leads SOT323

97-02-28

04-11-04

Product data sheet Rev. 05 — 21 January 2005 13 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Fig 15. Package outline SOT54 (SC-43A/TO-92).

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

L1(1)

max.

2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43A 04-06-28

04-11-16

A L

0 2.5 5 mm

scale

b1L1

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e1e

Product data sheet Rev. 05 — 21 January 2005 14 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Fig 16. Package outline SOT54A.

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7 3

5.08

e1L2

2.54

L1(1)

max.

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54A 97-05-13

04-06-28

0 2.5 5 mm

scale

Plastic single-ended leaded (through hole) package; 3 leads (wide pitch) SOT54A

Product data sheet Rev. 05 — 21 January 2005 15 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Fig 17. Package outline SOT54 variant.

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

L1(1)

max L2

max

2.5 2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 variant

A L

0 2.5 5 mm

scale

b1L1

Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant

e1e

04-06-28

05-01-10

Product data sheet Rev. 05 — 21 January 2005 16 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

9. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Table 9: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 5000 10000

BC817 SOT23 4 mm pitch, 8 mm tape and reel -215 - -235

BC817W SOT323 4 mm pitch, 8 mm tape and reel -115 - -135

BC337 SOT54 bulk, straight leads - -412 -

BC337 SOT54A tape and reel, wide pitch - - -116

BC337 SOT54A tape ammopack, wide pitch - - -126

BC337 SOT 54 variant bulk, delta pinning (on-circle) - -112 -

Product data sheet Rev. 05 — 21 January 2005 17 of 19

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

10. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BC817_BC817W_

BC337_5 20050121 Product data sheet CPCN200302007F1 9397 750 14022 BC817_4;

BC817W_SER_4;

BC337_3

Modiﬁcations: •The format of the data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

•This data sheet is a combination of the previous data sheets BC817_4, BC817W_SER_4 and

BC337_3.

•Table 1 and 2 added

•Table 3 Discrete pinning for SOT54A and SOT54 variant added

•Table 5 Marking codes for BC337, BC337-16, BC337-25 and BC337-40 added

•Table 8 Typical value for Cc changed to 3 pF according to CPCN200302007F1

•Figure 1,2 and 3 amended

•Figure 4,5,6,7,8,9,10,11 and 12 added

•Figure 15 changed according to CPCN200405006F

•Figure 16 and 17 added

•Section 9 added

BC817_4 20040105 Product speciﬁcation - 9397 750 12394 BC817_3

BC817W_SER_4 20040225 Product speciﬁcation - 9397 750 11944 BC817W_SER_3

BC337_3 19990415 Product speciﬁcation - 9397 750 05676 BC337_338_CNV_2

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Product data sheet Rev. 05 — 21 January 2005 18 of 19

11. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level Data sheet status[1] Product status[2] [3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.Date of release: 21 January 2005

Document number: 9397 750 14022

Published in The Netherlands

Philips Semiconductors BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

9 Packing information. . . . . . . . . . . . . . . . . . . . . 16

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 18

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

14 Contact information . . . . . . . . . . . . . . . . . . . . 18