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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 171, REV. B
Formerly Part Number SHD2263
HERMETIC POWER MOSFET - N-CHANNEL
FEATURES:
• 200 Volt, 0.21 Ohm, 14A MOSFET
• Isolated Hermetic Metal Package
• Fast Switching
• Low RDS (on)
• Ceramic Seals available (Add a “C” to the part number, i.e. SHDC226403)
• Similar to IRFY240
MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
RATING SYMBOL MIN. TYP. MAX. UNITS
GATE TO SOURCE VOLTAGE VGS - -
±20 Volts
ON-STATE DRAIN CURRENT VDS ≥ 2VDS(on), VGS = 10V ID (on) - - 14 Amps
PULSED DRAIN CURRENT @ TC = 25°C IDM - -
±56 Amps
OPERATING AND STORAGE TEMPERATURE TOP/TSTG -55 - +150 °C
THERMAL RESISTANCE, JUNCTION TO CASE RθJC - - 2.1
°C/W
TOTAL DEVICE DISSIPATION @ TC = 25°C PD - - 60 Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250 µA
BVDSS 200 - - Volts
DRAIN TO SOURCE ON-STATE VOLTAGE
VGS = 10V, ID = 10A
VDS(ON) - 1.8 2.1 Volts
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 10A
VGS = 10V, ID = 10A, TC = 125°C
RDS(ON)
- -
0.21
0.40
Ω
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250µA VGS(th) 2.0 - 4.0 Volts
FORWARD TRANSCONDUCTANCE
VDS ≥ 2VDS(on), ID = 10A
gfs 6.0 - - S(1/Ω)
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8xMax. Rating, VGS = 0V
VDS = 0.8xMax. Rating, VGS = 0V, TC = 125°C
IDSS
-
0.1
0.2
0.25
1.0
mA
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
IGSS - - 100
-100
nA
TURN ON DELAY TIME VDD = 100V,
RISE TIME ID =14A,
TURN OFF DELAY TIME RG = 5.0Ω,
FALL TIME VGS = 10V
td(ON)
tr
td(OFF)
tf
- 17
52
36
30
-
nsec
DIODE FORWARD VOLTAGE TC = 25°C, IS = -14A,
VGS = 0V
VSD - - -1.5 Volts
REVERSE RECOVERY TIME TJ = 150°C,
If = IS,
diF/ds = 100A/µsec,
trr
-
350
-
nsec
INPUT CAPACITANCE VGS = 0 V
OUTPUT CAPACITANCE VDS = 25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
Ciss
Coss
Crss
- 1300
400
130
-
pF
SHD226403
SHD226403R