MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT
www.vishay.com Vishay General Semiconductor
Revision: 17-Aug-15 1Document Number: 88679
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Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max.10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Note
(1) 2.0 μs pulse width, f = 1.0 kHz
PRIMARY CHARACTERISTICS
IF(AV) 40 A
VRRM 35 V, 45 V, 50 V, 60 V
IFSM 400 A
VF 0.60 V, 0.62 V
TJ max. 150 °C
Package TO-247AD (TO-3P)
Diode variations Common cathode
PIN 1
PIN 3 CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V
Maximum working peak reverse voltage VRWM 35 45 50 60 V
Maximum DC blocking voltage VDC 35 45 50 60 V
Maximum average forward rectified current TC = 125 °C IF(AV) 40 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode IFSM 400 A
Peak repetitive reverse surge current per diode IRRM (1) 2.0 1.0 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction temperature range TJ-65 to +150 °C
Storage temperature range TSTG -65 to +175 °C