TDA8580J - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Preliminary speciﬁcation

Supersedes data of 1998 Feb 25

File under Integrated Circuits, IC01

2000 Apr 18

INTEGRATED CIRCUITS

TDA8580J

Multi-purpose power amplifier

2000 Apr 18 2

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

FEATURES

General

•Supply voltage range from 8 to 24 V

•Low distortion

•Few external components, fixed gain

•High output power

•Can be used as a stereo amplifier in Bridge-Tied Load

(BTL) or quad Single-Ended (SE) amplifiers

•Single-ended mode without loudspeaker capacitor

•Mute and standby mode with one- or two-pin operation

•Diagnostic information for Dynamic Distortion Detector

(DDD), high temperature (145 °C) and short-circuit

•No switch on/off plops when switching between standby

and mute or mute and on; an external RC-network is

prescribed to ensure plop-free operation

•Low offset variation at outputs between mute and on

•Fast mute on supply voltage drops.

Protection

•Short-circuitprooftoground,positivesupplyvoltageand

across load; the supply voltage ranges where the

different short circuit conditions are guaranteed are

given in Chapter “Limiting values”

•ESD protected on all pins

•Thermal protection against temperatures exceeding

150 °C.

GENERAL DESCRIPTION

The TDA8580J is a stereo Bridge-Tied Load (BTL) or a

quad Single-Ended (SE) amplifier that operates over a

wide supply voltage range from 8 to 24 V. This makes it

suitable for applications such as television, home-sound

systems and active speakers.

Because of an internal voltage buffer, this device can be

used without a capacitor connected in series with the load

(SE application). A combined BTL and 2 ×SE application

can also be configured (one chip stereo and subwoofer

application).

ORDERING INFORMATION

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

TDA8580J DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1

2000 Apr 18 3

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VPoperating supply voltage 8.0 14.4 24 V

Iq(tot) total quiescent current VP= 14.4 V −140 170 mA

Istb standby supply current VP= 14.4 V −150µA

Bridge-tied load application

Gvvoltage gain 31 32 33 dB

Pooutput power THD = 0.5%; VP= 14.4 V; RL=4Ω14 15 −W

THD = 0.5%; VP= 24 V; RL=8Ω21 23 −W

THD total harmonic distortion fi= 1 kHz; Po= 1 W; VP= 14.4 V;

RL=4Ω−0.05 0.1 %

fi= 1 kHz; Po= 10 W; VP=24V;

L=8Ω−0.02 0.05 %

Voffset(DC) DC output offset voltage VP= 14.4 V; mute condition; RL=4Ω− 10 20 mV

VP= 14.4 V; on condition −0 140 mV

Vno noise output voltage Rs=1kΩ; VP= 14.4 V −100 150 µV

SVRR supply voltage ripple rejection fi= 1 kHz; Vripple(p-p) = 2 V; on or mute

condition; Rs=0Ω50 60 −dB

Single-ended application

Gvvoltage gain 25 26 27 dB

Pooutput power THD = 0.5%; VP= 14.4 V; RL=4Ω3.8 4.0 −W

THD = 0.5%; VP= 24 V; RL=4Ω10.5 11.5 −W

Voffset(DC) DC output offset voltage VP= 14.4 V; mute condition; RL=4Ω− 10 20 mV

VP= 14.4 V; on condition −0 100 mV

Vno noise output voltage Rs=1kΩ; VP= 14.4 V −80 120 µV

SVRR supply voltage ripple rejection fi= 1 kHz; Vripple(p-p) = 2 V; on or mute

condition; Rs=0Ω40 45 −dB

2000 Apr 18 4

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

BLOCK DIAGRAM

Fig.1 Block diagram.

handbook, full pagewidth

MGE010

30 kΩ

45 kΩ

kΩ

BUFFER

INTERFACE DIAGNOSTIC

13 6

MUTE

STANDBY DIAG

BUFFER

Vpx Vpx

45 kΩ

−

V/I

−

V/I

45 kΩ

kΩ

45 kΩ

−

V/I

−

V/I

IN1

IN2

IN3

IN5

IN4

17 OUT4+

OUT3−

BUFFER

OUT2−

OUT1+

315

VP1 VP2

216

PGND1 PGND2

TDA8580J

2000 Apr 18 5

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

PINNING

SYMBOL PIN DESCRIPTION

OUT1+ 1 non-inverting output 1

PGND1 2 power ground 1

VP1 3 supply voltage 1

OUT2−4 inverting output 2

STANDBY 5 standby/mute/on selection input

DIAG 6 diagnostic output

IN1 7 input 1

IN2 8 input 2

BUFFER 9 single-ended buffer output

IN3 10 input 3

IN4 11 input 4

IN5 12 input 5; signal ground capacitor

connection

MUTE 13 mute/on selection input

OUT3−14 inverting output 3

VP2 15 supply voltage 2

PGND2 16 power ground 2

OUT4+ 17 non-inverting output 4

handbook, halfpage

TDA8580J

MGE009

OUT1+

PGND1

VP1

OUT2−

STANDBY

DIAG

IN1

IN2

BUFFER

IN3

IN4

IN5

MUTE

OUT3−

VP2

PGND2

OUT4+

Fig.2 Pin configuration.

2000 Apr 18 6

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

FUNCTIONAL DESCRIPTION

TheTDA8580Jisamulti-purposepower amplifierwithfour

amplifiers which can be connected in the following

configurationswithhighoutputpowerand lowdistortion(at

minimum quiescent current):

•Dual bridge-tied load amplifiers

•Quad single-ended amplifiers

•Dual single-ended amplifiers and one bridge-tied load

amplifier.

The amplifier can be switched in on, mute and off

(standby)bytheMUTEandSTANDBY pins(forinterfacing

directly with a microcontroller). One-pin operation is also

possible by applying a voltage greater than 8 V to the

STANDBY pin to switch the amplifier in on mode.

Special attention is given to the dynamic behaviour as

follows:

•Slow offset change between mute and on (controlled by

MUTE and STANDBY pins)

•Low noise levels, which are independent of the supply

voltage.

Protections are included to avoid the IC being damaged at:

•Over temperature: Tj> 150 °C

•Short-circuit of the output pin(s) to ground or supply rail;

when short-circuited, the power dissipation is limited

•ESD protection (Human Body Model 3000 V, Machine

Model 300 V)

•Energy handling. A DC voltage of 6 V can be connected

to the output of any amplifier while the supply pins are

short-circuited to ground.

Diagnostics are available for the following conditions

(see Figs 3, 4 and 5):

•Chip temperature above 145 °C

•Distortion over 2% due to clipping

•Short-circuit protection active.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VPsupply voltage operating −24 V

no signal condition −28 V

VDIAG voltage on pin DIAG −18 V

IOSM non-repetitive peak output current −6A

ORM repetitive peak output current −4.5 A

VP(scol) supply voltage with short-circuit across load −28 V

VP(scg) supply voltage with short-circuit from output

to ground −26 V

VP(scs) supply voltage with short-circuit from output

to supply −16 V

VP(rp) reverse polarity −6V

tot total power dissipation −75 W

Tjjunction temperature −150 °C

Tstg storage temperature −55 +150 °C

Tamb ambient temperature −40 +85 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient in free air 40 K/W

Rth(j-c) thermal resistance from junction to case 1.5 K/W

2000 Apr 18 7

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

CHARACTERISTICS

VP= 14.4 V; Tamb =25°C; fi= 1 kHz; RL=∞; measured in test circuit of Fig.28; unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

VPoperating supply voltage 8.0 14.4 24 V

Iq(tot) total quiescent current −140 170 mA

Istb standby current −150µA

ODC output voltage −7.0 −V

VP(mute) low supply voltage mute 6.0 7.0 8.0 V

VIDC input voltage −4.0 −V

Control pins

STANDBY PIN (see Table 1)

V5(stb) voltageat STANDBY pin for standby

condition 0−0.8 V

Vhys(5)(stb) hysteresis voltage at STANDBY pin

for standby condition note 1 −0.2 −V

V5(mute) voltage at STANDBY pin for mute

condition V13 < 0.8 V 2.0 −5.3 V

V5(on) voltage at STANDBY pin for on

condition VP> 9 V; note 2 8.0 −18 V

MUTE PIN (see Table 1)

V13(mute) voltage at MUTE pin for mute

condition V5=5V 0 −0.8 V

V13(on) voltage at MUTE pin for on condition V5=5V 2.5 −5.3 V

Diagnostic; output buffer (open-collector); see Figs 3, 4 and 5

VOL LOW-level output voltage Isink =1mA −0.2 0.8 V

ILI leakage current VDIAG = 14.4 V −−1µA

CD clip detector VDIAG <0.8V 124%

j(diag) junction temperature for high

temperature warning VDIAG < 0.8 V −145 −°C

Stereo BTL application; see Figs 6,7,10,11,14,15,18,19,21,22,23,24,26 and 28

THD total harmonic distortion fi= 10 kHz; Po= 1 W; RL=4Ω;

ﬁlter: 22 Hz < f < 30 kHz −0.2 0.3 %

fi= 1 kHz; Po= 1 W; VP= 14.4 V;

RL=4Ω−0.05 0.1 %

fi= 1 kHz; Po= 10 W; VP=24V;

L=8Ω−0.02 0.05 %

Pooutput power THD = 0.5%; VP= 14.4 V; RL=4Ω14 15 −W

THD = 0.5%; VP= 24 V; RL=8Ω21 23 −W

THD = 10%; VP= 14.4 V; RL=4Ω18 20 −W

THD = 10%; VP= 24 V; RL=8Ω28 30 −W

Gvvoltage gain Vo(rms) = 3 V 31 32 33 dB

2000 Apr 18 8

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

Notes

1. Hysteresis between the rise and fall voltage when pin STANDBY is controlled with low ohmic voltage source.

2. At lower VP the voltage at the STANDBY pin for on condition will be adjusted automatically to maintain an

on condition at low battery voltage (down to 8 V) when using one-pin operation.

3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.

αcs channel separation Po= 2 W; fi= 1 kHz; RL=4Ω60 65 −dB

∆Gvchannel unbalance −−1dB

offset(DC) DC output offset voltage on condition −0 140 mV

mute condition; RL=4Ω−10 20 mV

Vno noise output voltage Rs=1kΩ; VP= 14.4 V; note 3 −100 150 µV

Vno(mute) noise output voltage mute note 3 −020µV

o(mute) output voltage mute Vi(rms) =1V −3 500 µV

SVRR supply voltage ripple rejection Rs=0Ω; fi= 1 kHz;

Vripple(p-p) = 2 V; on or mute

condition

50 60 −dB

Ziinput impedance 23 30 37 kΩ

CMRR common mode rejection ratio Rs=0Ω; Vi(rms) = 0.5 V; fi= 1 kHz −60 −dB

Quad SE application; see Figs 8,9,12,13,16,17,20,25, 27 and 29

THD total harmonic distortion fi= 1 kHz; Po= 1 W; RL=4Ω−0.05 0.1 %

fi= 10 kHz; Po= 1 W; RL=4Ω;

ﬁlter: 22 Hz < f < 30 kHz −0.2 0.3 %

fi= 1 kHz; Po= 1 W; VP=24V,

L=4Ω; ﬁlter: 22 Hz<f<30kHz −0.05 0.1 %

Pooutput power THD = 0.5%; VP= 14.4 V; RL=4Ω3.8 4.0 −W

THD = 0.5%; VP= 24 V; RL=4Ω10.5 11.5 −W

THD = 10%; VP= 14.4 V; RL=4Ω4.9 5.2 −W

THD = 10%; VP= 24 V; RL=4Ω14 15 −W

Gvvoltage gain Vo(rms) = 3 V 25 26 27 dB

αcs channel separation Po= 2 W; fi= 1 kHz; RL=4Ω40 46 −dB

∆Gvchannel unbalance −−1dB

offset(DC) DC output offset voltage VP= 14.4 V; on condition −0 100 mV

VP= 14.4 V; mute condition;

RL=4Ω−10 20 mV

Vno noise output voltage Rs=1kΩ; VP= 14.4 V; note 3 −80 120 µV

Vno(mute) noise output voltage mute note 3 −020µV

o(mute) output voltage mute Vi(rms) =1V −3 500 µV

SVRR supply voltage ripple rejection fi= 1 kHz; Vripple(p-p) = 2 V, on or

mute condition; Rs=0Ω40 45 −dB

Ziinput impedance 46 60 74 kΩ

CMRR common mode rejection ratio Vi(rms) = 0.5 V; fi= 1 kHz; Rs=0Ω− 60 −dB

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

2000 Apr 18 9

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

Table 1 Selection of standby, mute and on

VOLTAGE AT PIN STANDBY VOLTAGE AT PIN MUTE FUNCTION

< 0.8 V don’t care standby (off)

2 to 5.3 V < 0.8 V mute (DC settled)

2 to 5.3 V 2.5 to 5.3 V on (AC operating)

≥8.0 V don’t care on (AC operating)

handbook, halfpage

MGE020

DIAG

amplifier

output

temperature

overload

Fig.3 Diagnostic waveform: temperature overload.

handbook, halfpage

MGE021

DIAG

amplifier

output

normal active

DDD normal

Fig.4 Diagnostic waveform: DDD function.

2000 Apr 18 10

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, halfpage

DIAG

amplifier

output

short-circuit to

GND VP

MGE022

Fig.5 Diagnostic waveform: short-circuit to GND

or VP.

handbook, halfpage

10−1

10−2

MGS700

10 102103104105

fi (Hz)

THD

(%)

(2)

(1)

Fig.6 Total harmonic distortion as a function of

frequency; BTL mode.

RL=4Ω; VP= 14.4 V; 2 channel driven.

(1) Po=1W.

(2) Po=10W.

handbook, halfpage

10−1

10−2

MGS701

THD

(%)

(2)

(1)

10 102103104105

fi (Hz)

Fig.7 Total harmonic distortion as a function of

frequency; BTL mode.

RL=8Ω; VP= 24 V; 2 channel driven.

(1) Po=1W.

(2) Po=10W.

handbook, halfpage

10−1

10−2

MGS702

THD

(%)

10 102103104105

fi (Hz)

Fig.8 Total harmonic distortion as a function of

frequency; SE mode.

Po= 1 W; RL=4Ω; VP= 14.4 V; 4 channel driven.

2000 Apr 18 11

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, halfpage

10−1

10−2

MGS703

THD

(%)

(1)

(2)

10 102103104105

fi (Hz)

Fig.9 Total harmonic distortion as a function of

frequency; SE mode.

RL=4Ω; VP= 24 V; 4 channel driven.

(1) Po=5W.

(2) Po=1W.

handbook, halfpage

102

10−1

10−2

MGS704

10−1Po (W)

THD

(%)

11010

(1)

(3)

(2)

Fig.10 Total harmonic distortion as a function of

output power; BTL mode.

RL=4Ω; VP= 14.4 V; 2 channel driven.

(1) fi= 10 kHz.

(2) fi= 1 kHz.

(3) fi= 100 Hz.

handbook, halfpage

102

10−1

10−2

MGS705

10−1Po (W)

THD

(%)

11010

(1)

(3)

(2)

Fig.11 Total harmonic distortion as a function of

output power; BTL mode.

RL=8Ω; VP= 24 V; 2 channel driven.

(1) fi= 10 kHz.

(2) fi= 1 kHz.

(3) fi= 100 Hz.

handbook, halfpage

MGS706

110

Po (W)

THD

(%)

102

10−1

10−2

10−1

(1)

(3)

(1)

(2)

Fig.12 Total harmonic distortion as a function of

output power; SE mode.

RL=4Ω; VP= 14.4 V; 4 channel driven

(1) fi= 10 kHz.

(2) fi= 1 kHz.

(3) fi= 100 Hz.

2000 Apr 18 12

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, halfpage

102

10−1

10−2

MGS707

(1)

(3)

(2)

10−111010

o (W)

THD

(%)

Fig.13 Total harmonic distortion as a function of

output power; SE mode.

RL=4Ω; VP= 24 V; 4 channel driven.

(1) fi= 10 kHz.

(2) fi= 1 kHz.

(3) fi= 100 Hz.

handbook, halfpage

0 102030

MGS708

(W)

Po (W)

Fig.14 Power dissipation as a function of output

power; BTL mode.

fi= 1 kHz; RL=4Ω; VP= 14.4 V; 2 channel driven.

handbook, halfpage

01020 40

MGS709

30 Po (W)

(W)

Fig.15 Power dissipation as a function of output

power; BTL mode.

fi= 1 kHz; RL=8Ω; VP= 24 V; 2 channel driven.

handbook, halfpage

0246

MGS710

Po (W)

(W)

fi= 1 kHz; RL=4Ω; VP= 14.4 V; 4 channel driven.

Fig.16 Power dissipation as a function of output

power; SE mode.

2000 Apr 18 13

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, halfpage

048 16

MGS711

12 Po (W)

(W)

fi= 1 kHz; RL=4Ω; VP= 24 V; 4 channel driven.

Fig.17 Power dissipation as a function of output

power; SE mode.

handbook, halfpage

8 121620

MGS712

VP (V)

(W)

(1)

(2)

Fig.18 Output power as a function of supply

voltage; BTL mode.

fi= 1 kHz; RL=4Ω; 2 channel driven.

(1) THD = 10%.

(2) THD = 0.5%.

handbook, halfpage

81216 24

MGS713

20 VP (V)

(W)

(1)

(2)

Fig.19 Output power as a function of supply

voltage; BTL mode.

fi= 1 kHz; RL=8Ω; 2 channel driven.

(1) THD = 10%.

(2) THD = 0.5%

handbook, halfpage

81216 24

MGS714

20 VP (V)

(W)

(1)

(2)

Fig.20 Output power as a function of supply

voltage; SE mode.

fi= 1 kHz; RL=4Ω; 2 channel driven.

(1) THD = 0.5%.

(2) THD = 10%

2000 Apr 18 14

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, halfpage

MGS717

(dB)

10 102103104105

fi (Hz)

Fig.21 Gain as a function of input frequency;

BTL mode.

Ci= 470 nF.

−0.8

−0.4

0.4

0.8

MGS715

∆Po

(W)

10 102103104105

fi (Hz)

Fig.22 Power bandwidth as a function of

frequency; BTL mode.

THD = 0.5%; RL=4Ω; VP= 14.4 V.

handbook, halfpage

−0.8

−0.4

0.4

0.8

MGS716

∆Po

(W)

10 102103104105

fi (Hz)

THD = 0.5%; RL=8Ω; VP=24V.

Fig.23 Power bandwidth as a function of

frequency; BTL mode.

handbook, halfpage

−70

−66

−58

−62

−54

−50

MGS718

αcs

(dB)

(2)

(1)

10 102103104105

fi (Hz)

Fig.24 Channel separation as a function of

frequency; BTL mode.

Po= 2 W; RL=4Ω; VP= 14.4 V.

(1) Channels 3 and 4 to channels 1 and 2.

(2) Channels 1 and 2 to channels 3 and 4.

2000 Apr 18 15

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, halfpage

−60

−40

−50

−30

−20

MGS719

αcs

(dB)

(2)

(3)

(1)

10 102103104105

fi (Hz)

Fig.25 Channel separation as a function of

frequency; SE mode.

Po= 2 W; RS=0Ω; RL=4Ω; VP= 14.4 V.

(1) Channel 1 to channel 2.

(2) Channel 1 to channel 3.

(3) Channel 1 to channel 4.

handbook, halfpage

−80

−40

−60

−20

MGS720

SVRR

(dB)

(2)

(1)

10 102103104105

fi (Hz)

Fig.26 SVRR as a function of frequency;

BTL mode.

Rs=0Ω;V

ripple(p-p) =2V.

(1) Vp= 14.4 V.

(2) Vp=24V.

handbook, halfpage

−60

−40

−50

−30

−20

MGS721

SVRR

(dB)

(1)

(2)

10 102103104105

fi (Hz)

Fig.27 SVRR as a function of frequency; SE mode.

Rs=0Ω;V

ripple(p-p) =2V.

(1) Vp= 14.4 V.

(2) Vp=24V.

2000 Apr 18 16

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

APPLICATION INFORMATION

The application circuit depends on the supply voltage

used. For supply voltages below 18 V the application

circuits are shown in Figs 28, 29 and 30.

The typical application circuits for the different supply

voltage ranges are shown in Figs 31, 32 and 33.

Additional information for the applications shown in

Figs 28, 29 and 30

The RC-network connected to pin 5 determines the

amplifier switch on/off behaviour as follows;

•Switched from STANDBY to MUTE when Vswitching

(typically 9 V) is enabled and the switch SW1 is closed.

During MUTE there is no output noise and no offset.

•Switched from MUTE to ON when the switch SW1 is

opened. During switching ON the offset and noise are

gradually built up. The time constant is fixed by R1 ×C1.

Theinputscan betiedtogether andconnectedto oneinput

capacitor. Because the input resistance is decreased by a

factor of 2, the low frequency roll-off is shifted to a higher

frequency when Ci is kept the same value.

The low frequency cut-off is determined by;

The Boucherot network connected to the buffer (pin 9) is

necessary to guarantee a low output resistance at high

frequencies when the buffer is loaded (only in SE

applications).

Additional information for the applications shown in

Figs 31, 32 and 33

Short circuit behaviour at high supply voltages (Vp> 18 V):

•When Vp> 18 V it is advisable to use the applications

given in Figs 32 and 33. In these applications the

diagnostics output is tied to pin 5 (one pin operation) or

pin 13 (two pin operation). During a fault condition the

amplifier is soft-muted and the amplitude of the output

signal is reduced at:

– over temperature (still large dynamic range)

– short to ground and over load (output current

reduced)

•The 4.7 µF capacitor and the 10 kΩresistor connected

to pin 5 or to pin 13 are used to:

– provide a stable loop

– control the switch on/off behaviour

– minimize the effect due to clip detection.

Use of common buffer

In SE applications the buffer output is used in place of a

SE capacitor. To minimize the crosstalk (high channel

separation) and distortion it is advised to connect the

speaker wires as closely as possible to pin 9 without using

a shared wire. Internally in the IC all the efforts have been

taken to minimize the crosstalk by locating the feedback

loops as close as possible to pin 9.

If a common wire is shared by all the speakers, the series

resistance of this shared wire will introduce added signal

voltages resulting from the currents flowing through this

wire when a connected amplifier is driven by a signal.

Optimize the THD performance

The TDA8580J application can be optimized to gain the

lowest THD possible by applying the following guidelines:

•SE application: minimize the shared wires to pin 9 (see

section “Use of common buffer”).

•Because the inputs are quasi differential, ground loops

can be avoided by connecting the negative terminal of

the 100 µF signal ground capacitor (connected to

pin 12) to the ground pin of the signal processor.

Note: do not leave the inputs in the open condition to

prevent HF oscillation.

•Increase the value of electrolytic supply capacitor

(typical value 1000 µF) to the maximum possible to

minimize cross talk and distortion at low signal

frequencies, due to the PSRR (power supply rejection

ratio). For suppressing high frequency transients on the

supply line a capacitor (typical value 100 nF) with a low

ESR is required to be connected in parallel with the

electrolytic capacitor. The capacitor combination must

be placed as close as possible to the IC (using short

interconnection tracks).

Headroom

A typical CD requires at least 12 dB dynamic headroom

(a factor of 15.85), compared with the average power

output, for passing the loudest parts without distortion.

f3dB–12π( R

)××⁄

2π60 103

×220 10 9–

×××

---------------------------------------------------------------------- 12 Hz.

2000 Apr 18 17

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

For BTL application at Vp= 24 V, RL=8Ω and Po at

THD = 0.5% (see Fig.15), the Average Listening

Level (ALL) for music power without distortion yields:

Table 2 Pdas a function of headroom (music signals) for

Po=2×23 W (THD = 0.5%).

So for the average music listening level a total power

dissipation of 16 W can be used for calculating the

optimum heat sink thermal resistance.

Heatsink calculation

The measured thermal resistance of this package Rth(j-c) is

a maximum of 1.5 K/W. For a maximum ambient

temperature of 60oC the required heatsink thermal

resistance can be calculated as shown in the following

example.

EXAMPLE

Measured or given values:

Vp=24V

L=8Ω (2 × BTL)

Measured worst case Pd (sine wave) = 32 W

Tj(max) = 150oC

Tamb(max) =60

th(j-c) = 1.5 K/W

Table 3 Heatsink thermal resistance as a function of

headroom for Po=2×23 W (THD = 0.5%).

HEADROOM Pd

0dB 32W

12 dB 16 W

PoALL() 23

15.85

--------------- 1.45 W.==

HEAD ROOM PdRth(hs)

0 dB 32 W 1.3 K/W

12 dB 16 W 4.12 K/W

Rth hs() T

j max()

amb max()

–

-------------------------------------------------- Rth j c–()

150 60–

---------------------- 1.5 1.3 K/W=–=

–=

2000 Apr 18 18

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, full pagewidth

MGU075

30 kΩ

45 kΩ

kΩ

BUFFER

INTERFACE DIAGNOSTIC

13 6

MUTE

STANDBY DIAG

BUFFER

Vpx Vpx

45 kΩ

−

+−

−

V/I

−

V/I

45 kΩ

kΩ

45 kΩ

−

V/I

−

V/I

IN1

IN2

IN3

IN5

IN4

17 OUT4+

OUT3−

BUFFER

OUT2−

OUT1+

315

216

PGND1 PGND2

TDA8580J

1000 µF

16/40 V 100 nF

kΩ

100 µF

10 V

220 nF

+5 V

4 or 8 Ω

VinL

220 nF

VinR

VP1 VP2

4.7 µF

(1)

Vswitching

(9 V typical)

SW1

Fig.28 Stereo bridge-tied load application; VP≤18 V.

(1) R1 and R2 values depend on Vswitching applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.

2000 Apr 18 19

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, full pagewidth

MGU077

30 kΩ

45 kΩ

kΩ

BUFFER

INTERFACE DIAGNOSTIC

13 6

MUTE

STANDBY DIAG

BUFFER

Vpx Vpx

45 kΩ

−

+−

−

V/I

−

V/I

45 kΩ

kΩ

45 kΩ

−

V/I

−

V/I

IN1

IN2

IN3

IN5

IN4

17 OUT4+

OUT3−

BUFFER

OUT2−

OUT1+

315

216

PGND1 PGND2

TDA8580J

1000 µF

16/40 V 100 nF

kΩ

100 µF

10 V

220 nF

+5 V

4 or 8 Ω

VinR

220 nF

VinL

220 nF

VinL

FRONT

220 nF

VinR

4 or 8 Ω

REAR

VP1 VP2

4.7 µF

(1)

Vswitching

(9 V typical)

2 Ω

220 nF

SW1

Fig.29 Quad single-ended application; VP≤18 V.

(1) R1 and R2 values depend on Vswitching applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.

2000 Apr 18 20

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, full pagewidth

MGU076

30 kΩ

45 kΩ

kΩ

BUFFER

INTERFACE DIAGNOSTIC

13 6

MUTE

STANDBY DIAG

BUFFER

Vpx Vpx

45 kΩ

−

+−

−

V/I

−

V/I

45 kΩ

kΩ

45 kΩ

2 Ω

−

+−

V/I

−

V/I

IN1

IN2

IN3

IN5

IN4

220 nF

17 OUT4+

OUT3−

BUFFER

OUT2−

OUT1+

315

216

PGND1 PGND2

TDA8580J

1000 µF

16/40 V 100 nF

kΩ

100 µF

10 V

220 nF

+5 V

4 or 8 Ω

VinR

220 nF

VinL

220 nF

VinR

VP1 VP2

4.7 µF

(1)

Vswitching

(9 V typical)

SW1

Fig.30 Dual single-ended and one bridge-tied load application; VP≤18 V.

(1) R1 and R2 values depend on Vswitching applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.

2000 Apr 18 21

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, full pagewidth

MGS699

(3)

OUT1+

IN1 7

(1)

OUT2−

IN2

inputs

Vswitching

(9 V typical)

315

216

OUT3−

IN3 10 OUT4+

+5 V

IN4 11 BUFFER

IN5 12

DIAG

PGND2PGND1

STANDBY

SW1

15 kΩ

(3) R1

45 kΩ

2 Ω(2)

10 kΩ

1000 µF

100 µF

4.7 µF

100 nF

220 nF(2)

TDA8580J

VP1 VP2

Fig.31 Application 1; supply voltage range 8 V < VP≤18 V; 1-pin and 2-pin operation.

(1) Load conditions: quad SE (4 x 4 Ω), or dual BTL (2 x 8 Ω), or dual SE (2 x 4 Ω) and one BTL (1 x 8 Ω).

(2) RC combination not required in BTL mode.

(3) R1 and R2 values depend on Vswitching applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.

handbook, full pagewidth

MGS697

(3)

OUT1+

IN1 7

(1)

OUT2−

IN2

inputs

Vswitching

(9 V typical)

VP1 VP2

216

OUT3−

IN3 10 OUT4+

IN4 11 BUFFER

IN5 12

MUTE 13 DIAG

PGND2PGND1

3.6 V

STANDBY 5

15 kΩ

(3) R1

45 kΩ

2 Ω(2)

1000 µF

100 µF

4.7 µF

100 nF

220 nF(2)

TDA8580J

SW1

Fig.32 Application 2; supply voltage range 18 V < VP≤24 V; 1-pin operation.

(1) Load conditions: quad SE (4 x 4 Ω), or dual BTL (2 x 8 Ω), or dual SE (2 x 4 Ω) and one BTL (1 x 8 Ω).

(2) RC combination not required in BTL mode.

(3) R1 and R2 values depend on Vswitching applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.

2000 Apr 18 22

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

handbook, full pagewidth

MGS698

OUT1+

IN1 7

(1)

OUT2−

IN2

inputs

315

216

OUT3−

IN3 10 OUT4+

IN4 11 BUFFER

IN5 12

DIAG

PGND2PGND1

STANDBY 5

10 kΩ

MSB

MUTE

2 Ω(2)

1000 µF

100 µF

4.7 µF

100 nF

220 nF(2)

TDA8580J

10 kΩ

MUTE

4.7 µF

VP1 VP2

Fig.33 Application 3; supply voltage range 18 V < VP≤24 V; 2-pin operation.

(1) Load conditions: quad SE (4 x 4 Ω), or dual BTL (2 x 8 Ω), or dual SE (2 x 4 Ω) and one BTL (1 x 8 Ω)

(2) RC combination not required in BTL mode.

INTERNAL PIN CONFIGURATION

PIN NAME EQUIVALENT CIRCUIT

7, 8, 10, 11

and 12 Inputs

1, 4, 9, 14

and 17 Outputs

Vint

7, 8, 10 and 11

MGS723

Vint

MGL849

0.5 VP

1, 4, 9, 14, and 17

2000 Apr 18 23

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

5 STANDBY

13 MUTE

6 DIAG

PIN NAME EQUIVALENT CIRCUIT

MGL848

4 V

Vint

MGS724

MGS722

2000 Apr 18 24

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

SOT243-1

0 5 10 mm

scale

117

non-concave

97-12-16

99-12-17

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1

view B: mounting base side

UNIT A e1

A2bpcD

(1) E(1) Z(1)

deD

hLL

mm 17.0

15.5 4.6

4.4 0.75

0.60 0.48

0.38 24.0

23.6 20.0

19.6 10 2.54

0.8

12.2

11.8 1.27

5.08 2.4

1.6

62.00

1.45

2.1

1.8

3.4

3.1 4.3

12.4

11.0

0.4

0.03

2000 Apr 18 25

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

SOLDERING

Introduction to soldering through-hole mount

packages

This text gives a brief insight to wave, dip and manual

soldering.A more in-depthaccount ofsoldering ICscan be

found in our

“Data Handbook IC26; Integrated Circuit

Packages”

(document order number 9398 652 90011).

Wave soldering is the preferred method for mounting of

through-hole mount IC packages on a printed-circuit

board.

Soldering by dipping or by solder wave

The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact

with the joints for more than 5 seconds.

Thetotalcontacttime ofsuccessivesolderwaves mustnot

exceed 5 seconds.

The device may be mounted up to the seating plane, but

the temperature of the plastic body must not exceed the

specified maximum storage temperature (Tstg(max)). If the

printed-circuit board has been pre-heated, forced cooling

may be necessary immediately after soldering to keep the

temperature within the permissible limit.

Manual soldering

Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than

2 mm above it. If the temperature of the soldering iron bit

is less than 300 °C it may remain in contact for up to

10 seconds. If the bit temperature is between

300 and 400 °C, contact may be up to 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods

Note

1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

PACKAGE SOLDERING METHOD

DIPPING WAVE

DBS, DIP, HDIP, SDIP, SIL suitable suitable(1)

2000 Apr 18 26

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

DATA SHEET STATUS

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DATA SHEET STATUS PRODUCT

STATUS DEFINITIONS (1)

Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for

product development. Speciﬁcation may change in any manner without

notice.

Preliminary speciﬁcation Qualiﬁcation This data sheet contains preliminary data, and supplementary data will be

published at a later date. Philips Semiconductors reserves the right to

make changes at any time without notice in order to improve design and

supply the best possible product.

Product speciﬁcation Production This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors

reserves the right to make changes at any time without notice in order to

improve design and supply the best possible product.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseor atany otherconditions above thosegiven inthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuseofany oftheseproducts,conveys nolicenceor title

under any patent, copyright, or mask work right to these

products,and makesno representationsor warrantiesthat

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2000 Apr 18 27

Philips Semiconductors Preliminary speciﬁcation

Multi-purpose power ampliﬁer TDA8580J

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2000 69

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Printed in The Netherlands 753503/25/03/pp28 Date of release: 2000 Apr 18 Document order number: 9397 750 05478