DATA SH EET
Product data sheet
Supersedes data of 2002 Aug 08
2004 Jan 09
DISCRETE SEMICONDUCTORS
PBSS4350T
50 V; 3 A NPN low VCEsat
(BISS) transistor
2004 Jan 09 2
NXP Semiconductors Product data sheet
50 V; 3 A NPN low VCEsat
(BISS) transistor PBSS4350T
FEATURES
•Low collector-emitter saturation volt age VCEsat and
corresponding low RCEsat
•High collector current capability
•High collector current gain
•Improved efficiency due to reduced heat generation.
APPLICATIONS
•Power management applications
•Low and medium power DC/DC converto rs
•Supply line switching
•Battery chargers
•Linear voltage regula tion with low voltage drop-out
(LDO).
DESCRIPTION
NPN low V CEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5350T.
MARKING
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE(1)
PBSS4350T ZC*
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage 50 V
ICcollector current (DC) 2 A
ICRP repetitive peak collector
current 3 A
RCEsat equivalent on-resistance 130 mΩ
PIN DESCRIPTION
1base
2emitter
3collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23 ) and symbo l .
ORDERING INFORMATION
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
PBSS4350T −plastic surface mounted package; 3 leads SOT23
2004 Jan 09 3
NXP Semiconductors Pr oduct data shee t
50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T
LIMITING VALUES
In accordance with the A bsolute Maximum Rating System (IEC 60134).
Notes
1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a pr inted-circuit board; single sided c opper; tinplated; standard footprint.
3. Device mounted on a pr inted-circuit board; single sided c opper; tinplated; mounting pad for collector 1 cm2.
4. Device mounted on a pr inted-circuit board; single sided c opper; tinplated; mounting pad for collector 6 cm2.
THERMAL CHARACTE RISTICS
Notes
1. Device mounted on a pr inted-circuit board; single sided c opper; tinplated; standard footprint.
2. Device mounted on a pr inted-circuit board; single sided c opper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a pr inted-circuit board; single sided c opper; tinplated; mounting pad for collector 6 cm2.
4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter −50 V
VCEO collector-emitter voltage open base −50 V
VEBO emitter-base voltage open collector −5 V
ICcollector current (DC) −2 A
ICRP repetitive peak colle ctor current note 1 −3 A
ICM peak collector current single peak −5 A
IBbase current (DC) −0.5 A
Ptot total power dissipation Tamb ≤ 25 °C; note 2 −300 mW
Tamb ≤ 25 °C; note 3 −480 mW
Tamb ≤ 25 °C; note 4 −540 mW
Tamb ≤ 25 °C; notes 1 and 2 −1.2 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to
ambient in free air; note 1 417 K/W
in free air; note 2 260 K/W
in free air; note 3 230 K/W
in free air; notes 1 and 4 104 K/W
2004 Jan 09 4
NXP Semiconductors Pr oduct data shee t
50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-of f current IE = 0; VCB = 50 V − − 100 nA
IE = 0; VCB = 50 V; Tj = 150 °C− − 50 μA
IEBO emitter-base cut-off current IC = 0; VEB = 5 V − − 100 nA
hFE DC current gain IC = 100 mA; VCE = 2 V 300 − −
IC = 500 mA; VCE = 2 V 300 − −
IC = 1 A; VCE = 2 V; note 1 300 − −
IC = 2 A; VCE = 2 V; note 1 200 − −
IC = 3 A; VCE = 2 V; note 1 100 − −
VCEsat collector-emitter saturation
voltage IC = 500 mA; IB = 50 mA − − 80 mV
IC = 1 A; IB = 50 mA − − 160 mV
IC = 2 A; IB = 100 mA; note 1 − − 280 mV
IC = 2 A; IB = 200 mA; note 1 − − 260 mV
IC = 3 A; IB = 300 mA; note 1 − − 370 mV
RCEsat equivalent on-resistance IC = 2 A; IB = 200 mA; note 1 −100 130 mΩ
VBEsat base-emitter saturation
voltage IC = 2 A; IB = 100 mA; note 1 − − 1.1 V
IC = 3 A; IB = 300 mA; note 1 − − 1.2 V
VBEon base-emitter turn-on voltage IC = 1 A; VCE = 2 V; note 1 1.2 − − V
fTtransition frequency IC = 100 mA; VCE = 5 V;
f = 100 MHz 100 − − MHz
Cccollector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz − − 25 pF
2004 Jan 09 5
NXP Semiconductors Pr oduct data shee t
50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T
handbook, halfpage
0
1000
200
400
600
800
MLD867
10−11
(1)
10 IC (mA)
hFE
102103104
(3)
(2)
Fig.2 DC current gain as a fu nction of collector
current; ty pical values.
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage MLD868
0
1200
400
800
10−1110 IC (mA)
VBE
(mV)
102103104
(1)
(3)
(2)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage MLD869
100
1300
500
900
10−1110 IC (mA)
VBEsat
(mV)
102103104
(1)
(3)
(2)
Fig.4 Base-emitter saturation v oltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage MLD870
100
1300
500
900
10−1110 IC (mA)
VBEsat
(mV)
102103104
(1)
(3)
(2)
Fig.5 Base-emitter saturation v oltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
2004 Jan 09 6
NXP Semiconductors Pr oduct data shee t
50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T
handbook, halfpage
MLD871
10
103
102
10−1110 IC (mA)
VCEsat
(mV)
102103104
1
(3)
(2)
(1)
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MLD872
10
103
102
10−1110 IC (mA)
VCEsat
(mV)
102103104
1
(3)
(1)
(2)
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MLD873
104
103
102
10−1110 IC (mA)
VCEsat
(mV)
102103104
10
(3)
(1) (2)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 50.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MLD874
104
103
102
10−1110 IC (mA)
VCEsat
(mV)
102103104
10
(3)
(1) (2)
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 100.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
2004 Jan 09 7
NXP Semiconductors Pr oduct data shee t
50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T
handbook, halfpage
103
102
10
1
10−2
10−1
MLD875
10−1110 IC (mA)
RCEsat
(Ω)
103
102104
(1)
(3)
(2)
Fig.10 Equivalent on-resistance as a functio n of
collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
2004 Jan 09 8
NXP Semiconductors Pr oduct data shee t
50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 09 9
NXP Semiconductors Pr oduct data shee t
50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have chang ed since this document wa s published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specifica t ion for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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reserves the right to make changes to informa t ion
published in this doc ument, including without limitation
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without notice. This document supersedes and replaces all
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warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other cond itions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the tech nical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/02/pp10 Date of release: 2004 Jan 09 Document orde r number: 9397 750 12437
