THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 17.5
175
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) for 2N5415 VCB = -175 V
for 2N5416 VCB = -280 V -50
-50 µA
µA
ICEO Collector Cut-off
Current (IB = 0) VCE = -150 V -50 µA
IEBO Emitter Cut-off Current
(IC = 0) for 2N5415 VEB = -4 V
for 2N5416 VEB = -6 V -20
-20 µA
µA
VCER∗Collector-Emitter
Sustaining Voltage IC = -50 mA RBE = 50Ω for 2N5416 -350 V
VCEO(sus)∗Collector-Emitter
Sustaining Voltage IC = -10 mA
for 2N5415
for 2N5416 -200
-300 V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = -50 mA IB = -5 mA -2 .5 V
VBE∗Base-Emitter Voltage IC = -50 mA VCE = -10 V -1.5 V
hFE∗DC Current Ga in IC = -50 mA VCE = -10 V
for 2N5415
for 2N5416 30
30 150
120
hfe Small Signal Current
Gain IC = -5 mA VCE = -10 V f = 1KHz 25
fTTransition frequency IC = -10 mA VCE = -10 V f = 5MHz 15 MHz
CCBO Collector Base
Capacitance IE = 0 VCB = -10 V f = 1MHz 25 pF
∗ P ulsed: P ulse duration = 300 µs, d uty cy cle 1.5 %
2N5415 / 2N5416
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