DUAL MATCHED NPN
SILICON TRANSISTOR
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8570
Issue 1
Page 1 of 3
2N2060 / 2N2060A
• Matched Dual NPN Transistors
• Low Power
• Hermetically Sealed TO-77 Metal Package
• High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCEO Collector – Emitter Voltage 60V
VCER Collector – Emitter Voltage 80V
VCBO Collector – Base Voltage 100V
VEBO Emitter – Base Voltage 7V
IC Continuous Collector Current 500mA
Per Side
Per SidePer Side
Per Side
Total Device
Total DeviceTotal Device
Total Device
PD Total Power Dissipation at
TA = 25°C 540 mW 600 mW
Derate Above 25°C 3.08 mW/°C 3.48 mW/°C
TC = 25°C 1.5W 2.12W
Derate Above 25°C 8.6 mW/°C 12.1 mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
DUAL MATCHED NPN SILICON TRANSISTOR
2N2060 / 2N2060A
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8570
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min Typ Max Units
VCB = 80V IE = 0 0.002
ICBO Collector-Cut-Off Current
TA = 150°C 10
µA
IEBO Emitter Cut-off Current VBE = 5V IC = 0 2.0 nA
V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA IE = 0 100
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA IC = 0 7
V(BR)CER
(1)
Collector – Emitter Breakdown
Voltage IC = 100mA RBE ≤10Ω 80
V(BR)CEO
(1)
Collector – Emitter Breakdown
Voltage IC = 30mA IB = 0 60
VBE(sat) Base-Emitter Saturation Voltage IC = 50mA IB = 5mA 0.9
2N2060A
IC = 50mA IB = 5mA 0.6
2N2060
VCE(sat) Collector - Emitter Saturation
Voltage
IC = 50mA IB = 5mA 1.2
V
IC = 10µA VCE = 5V 25 75
IC = 100µA VCE = 5V 30 90
IC = 1.0mA VCE = 5V 40 120
HFE Forward-current transfer ratio
IC = 10mA VCE = 5V 50 150
-
DYNAMIC CHARACTERISTICS
IC = 50mA VCE = 10V
fT Current Gain Bandwidth Product
f = 20MHz
60 MHz
IC = 1.0mA VCE = 5V
hfe Small-Signal Current Gain
f = 1.0KHz
50 150 -
IC = 1.0mA VCE = 5V
hie
(3)
Input Impedance
f = 1.0KHz
1000 4000
IC = 1.0mA VCB = 10V
hib
(3)
Input Impedance
f = 1.0KHz
20 30
Ω
VCB = 10V IE = 0
Cobo Output Capacitance
f = 1.0MHz
15 pF
VBE = 0.5V IC = 0
Cibo Input Capacitance
f = 1.0MHz
85 pF
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
(2) The lowest
HFE
reading is taken as
HFE1
for this ratio
(3) Parameter by design only
DUAL MATCHED NPN SILICON TRANSISTOR
2N2060 / 2N2060A
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8570
Issue 1
Page 3 of 3
MATCHING CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min Typ Max Units
IC = 100µA VCE = 5V 0.9 1.0
HFE1/ HFE2
DC Current Gain Ratio
(2)
IC = 1.0mA VCE = 5V 0.9 1.0
-
IC = 100µA VCE = 5V 3.0
VBE1- VBE2
Base – Emitter Voltage
Differential
IC = 1.0mA VCE = 5V 5.0
mV
IC = 1.0mA VCE = 5V
(
)
T
BE2
V
-BE1
V
∆
∆
Base –Emitter Voltage
Differential Change Due To
Temperature TA = -55°C to +125°C
5.0 µV/°C
MECHANICAL DATA
Dimensions in mm (inches)
1.02
(0.040)
Max.
12.7 (0.500)
Min.6.10 (0.240)
6.60 (0.260)
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
8.51 (0.335)
5.08
(0.200)
2.54
(0.100)
2.54
(0.100) 0.74 (0.029)
1.14 (0.045)
1
6
4
3
2
45˚ 0.71 (0.028)
0.86 (0.034)
0.41 (0.016)
0.53 (0.021)
5
TO
-
77
(MO
-
METAL PACKAGE
PIN 1 – Collector PIN 4 – Emitter
PIN 2 – Base PIN 5 – Base
PIN 3 – Emitter PIN 6 – Collector