,,. w" I 1 `:,.L+. SILICON CONTROLLED RECTIFIERS . . . PNPN devices designed for such as temperature, control, and light, warning high volume consumer and speed control; systems where ,,\+\.>y K,:K*,:i': .\+. *,. .::.:$.:,, ,~:+ .s3, . ,<** "!~$$ i:,) .,$;t.i,'~:,$~ * applications process and remote reliability - 4.0 AMPER~~~##i' 30 thru 69~,.~,kTs ~.~,i ..? of operation is important. @ Passivated Surface for Reliability and Uniformity @ power Rated at Economical prices @ Practical Level Triggering and Holding Rugged, ThermopadA * Flat, Characteristics Construction for Low Thermal Resist- ance, High Heat Dissipation and Durability e Recommended Electrical Replacement for C 106 .,. MAXIMUM RATINGS (TJ = 100C unless otherwiw noted.) Peak Forward Blocking Voltage *:\. `.?.. $$<U rslt J'voits and Reverse (Note ,$,., ,,./;<, Rating `Repetitive ~\.?.%s: .:i... ,\i, :j~...! ,.$:= \+, :$:+,.,$8. `") ,,.,.. 1) 2N6236 2N6237 2N6238 (1/2 Sine Wave) (Gate Open, TJ = -40to +11 OC) 2N6239 2N6240 2N6241 `Non-Repetitive Peak Reverse Blocking Voltage (1/2 Sine Wave, 2N6236 $? Gate Open, 2N6,23%:~ `" TJ = -40 to +110C) 2N,,9,*g:::f: *6239""J `Averaga On-State (Tc = -40 $%?g~~ .. ~.:!,. ~:,. . .,,,t., ~t,$+ +.,4.s` *l./ ,::'1...$~ Current +90C) to volts Amp (Tc = +1 OOC) ,g$ .+, `NY$ ,,., Currerr~~~$& ,.~ `Surga On-State (1/2 Sine Wave, 6@~~j$$j: (1/2 Sine Wave~,~ !~,,mky "YC ..,,. ..~!,,. :ircuit Fusing ~,@i~rations (TJ = -4~w +~~~C, +90C) = +900C) 2.6 A2S 0.5 Watts PG(AV) 0.1 Watt IGM 0.2 Amp 6.0 volts t = 1.0 to 8.3 ms) *peak ~&K':%<@r (Pul*,@<*h = 10 ps) `Am~~&ate L Power (t,~%.~ ms) .,.. `eak Forward Gate Current VRGM `eak Reverse Gate Voltage `Oparating `Storaga Junction Temperature Temperature Range Mounting Torque (Note 2) HERMAL TJ -40 to +110 Tstg -- -40 to +150 Range *7 Oc DIM A B c 0 E F G H J K L Oc 6.0 in.lb + Cheratieriatic Junction 1 rharmal Resistance Junction to Ambient indicates JEDEC Registered of Motorola Inc. Symbol M in Max Unit ReJC - 3.0 Qclw ReJA - 75 Oclw ;2~G ~, HEAT SINK CONTACT AREA IBOTTOM) CHARACTERISTICS `Thermal Resistance, to Case ATradamark PIN Amp INCHES MIN MAX 0.270 0.330 0.070 0.130 0.390 0.450 0.020 0.026 0.150 NOM 0.090 TP 0.025 0.035 0.130 0.175 0.115 0.118 0.595 0.655 0.015 0.025 CASE MILLIMETERS. MIN MAX 6.860 8.380 1.770 3.300 9.910 11.430 0.508 0.660 3.810 NOM 2.290 TP 0.835 0.889 . 3.300 4.450 2.910 3.000 15,110 18.650 0.381 0.635 ?7-02 Data. MOTOROLA INC., 1973 DS 6538R . .,-,~-,,,,, :;, , ,' ,.,. ~"" ,, ., ,, ;,,,, ,, ,' ,,, ,,. ,,,, :", f,, , ., , ,., ,, ,., , ELECTRICAL ,,. CHARACTERISTICS (Tc = 25C unl~s otherwise Charatieristics *Peak Forward (hated ,, ,, Blocking Current VDRM, VRRM, *Peak Forward (ITM I 1) Ve n -- -- 200 -- -- 2.2 -- -- $:,,1,, ?:,*,:P 200 .,*:+ KR,,,'`" vol~::,, ,\.*\ ~.~fy .vt~:~.Is.. .... I "~+$,.*/.\ CASE TEMPERATURE FIGURE 2 - MAXIMUM AMBIENT u - Ou - 4,0 30 I 0 lT(Av), AVERAGE FORWARDCUR"RENT(AMP) :, ~@ 200 IGT F ~~ -- WA Cycle) dc) ~~~. 82~ ,'. -- Unit PA 240hrns) @:&@,~M Max IRRM Voltage 1- Typ VTM (Continuous ,,4 .::) FIGURE (Note Voltage = 12 Vdc, RL= I Gate Non-Trigger I `: Current Min IDRM Peak, Pulse Width = 1 to 2 ms, 2% Duty Gate Trigger Current (VAK Symbol 1) TJ = 110C) "On" = 8.2A RGK = 1000 ohms.) TJ = 110C) "Peak Reverse Blocking (Rated (Note noted, M070ROLA.. Semiconductor 0.1 0,2 0.3 I 0.4 TEMPERATURE Uu" 0.5 3"- UL ,o" - 0.6 N 0.8 0.7 IT{AV), AVERAGE FORWAROCURRENT (AMP) Products Inc. -- ,. ,., Printed in Switzerland DS 6~8 RI