Order this document by MPS404A/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector - Emitter Voltage VCEO -35 Vdc Collector - Base Voltage VCBO -40 Vdc Emitter - Base Voltage VEBO -25 Vdc Collector Current -- Continuous IC -150 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 C/W RqJC 83.3 C/W Operating and Storage Junction Temperature Range 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector - Emitter Breakdown Voltage(2) (IC = -10 mAdc, IB = 0) V(BR)CEO -35 -- Vdc Collector - Base Breakdown Voltage (IC = -10 mAdc, IE = 0) V(BR)CBO -40 -- Vdc Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) V(BR)EBO -25 -- Vdc Collector Cutoff Current (VCB = -10 Vdc, IE = 0) ICBO -- -100 nAdc Emitter Cutoff Current (VBE = -10 Vdc, IC = 0) IEBO -- -100 nAdc Characteristic OFF CHARACTERISTICS 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPS404A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit DC Current Gain (IC = -12 mAdc, VCE = -0.15 Vdc) hFE 30 400 -- Collector - Emitter Saturation Voltage (IC = -12 mAdc, IB = -0.4 mAdc) (IC = -24 mAdc, IB = -1.0 mAdc) VCE(sat) -- -- -0.15 -0.2 Base - Emitter Saturation Voltage (IC = -12 mAdc, IB = -0.4 mAdc) (IC = -24 mAdc, IB = -1.0 mAdc) VBE(sat) -- -- -0.85 -1.0 fob 4.0 -- MHz Cobo -- 20 pF NORMAL MODE INVERTED MODE TJ = 25C ON CHARACTERISTICS Vdc Vdc SMALL- SIGNAL CHARACTERISTICS Common-Base Cutoff Frequency (IC = -1.0 mAdc, VCB = 6.0 Vdc) Output Capacitance (VCB = -6.0 Vdc, IE = 0, f = 1.0 MHz) VBC, BASE-COLLECTOR VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) VEC , EMITTER-COLLECTOR VOLTAGE (mV) VCE , COLLECTOR-EMITTER VOLTAGE (mV) -100 NORMAL MODE INVERTED MODE -80 TJ = 25C -60 VCE(sat) @ IC/IB = 10 -40 IC/IB = 2.0 -20 0 -1.0 VEC(sat) @ IE/IB = 2.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) IE, EMITTER CURRENT (mA) -50 -70 -100 Figure 1. Collector-Emitter Voltage 2 -0.9 -0.82 -0.74 -0.66 VBE(sat) @ IC/IB = 2 VBC(sat) @ IE/IB = 2 VBE(on) @ VCE = -1.0 V -0.58 -0.50 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) IE, EMITTER CURRENT (mA) -50 -70 -100 Figure 2. Base "On" Voltage Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS404A NORMAL MODE INVERTED MODE 10 200 TJ = 125C 25C 100 80 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 7.0 60 -55C 40 30 20 5.0 25C -55C 3.0 2.0 1.5 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 1.0 -1.0 -50 -70 -100 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IE, EMITTER CURRENT (mA) Figure 3. DC Current Gain @ VCE = -0.15 Vdc Figure 4. DC Current Gain @ VEC = -0.15 Vdc 600 10 400 TJ = 125C 7.0 TJ = 125C 300 200 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN -2.0 -3.0 IC, COLLECTOR CURRENT (mA) 25C 100 80 -55C 60 25C 5.0 -55C 3.0 2.0 40 30 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) 1.0 -1.0 -50 -70 -100 -0.5 TJ = 25C -50 -70 -100 -0.5 TJ = 25C -0.4 -0.4 -0.3 -5.0 -7.0 -10 -20 -30 IE, EMITTER CURRENT (mA) Figure 6. DC Current Gain @ VEC = -1.0 Vdc VEC , EMITTER-COLLECTOR VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. DC Current Gain @ VCE = -1.0 Vdc -2.0 -3.0 IC = -2.0 mA -10 mA -50 mA -0.3 IE = -0.5 mA -2.0 mA -50 mA -10 mA -0.2 -0.2 -0.1 -0.1 0 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 IB, BASE CURRENT (mA) -1.0 -2.0 -5.0 Figure 7. Collector Saturation Region Motorola Small-Signal Transistors, FETs and Diodes Device Data 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA) -10 -20 -50 Figure 8. Emitter Saturation Region 3 MPS404A 70 50 20 NOTE: The dynamic resistance between the emitter and NOTE: collector is measured with the device operated in NOTE: the Inverted Mode. TJ = 25C C, CAPACITANCE (pF) rec(on), EMITTER-COLLECTOR "ON" RESISTANCE (OHMS) 100 Ie = 100 A RMS f = 1.0 kHz TJ = 25C IE = 0 30 20 7.0 Cob 5.0 Cib 10 3.0 7.0 5.0 -0.1 -0.5 -0.7 -1.0 -0.2 -0.3 -2.0 -3.0 2.0 -0.05 -0.1 -5.0 -7.0 -10 -0.2 -0.5 -1.0 -2.0 -5.0 -10 IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 9. Emitter-Collector "On" Resistance Figure 10. Capacitance 2.0 k -20 -50 1.0 k VCC = -10 V IC/IB = 0 TJ = 25C 1.0 k 700 500 VCC = -10 V IC/IB = 0 IB1 = IB2 TJ = 25C 700 ts 500 300 t, TIME (ns) t, TIME (ns) 10 tr 200 100 70 50 300 tf 200 td @ VBE(off) = -1.4 V 30 20 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 11. Turn-On Time RBB 1.0 k Vin -50 -70 -100 Figure 12. Turn-Off Time VCC (-6.0 V) 1.0 k TO SCOPE RC (560 ) C1 RB (0-250 pF) 10 k RB* (5.6 k) INPUT Vin 51 Vin (Volts) VBB (Volts) ton, td and tr -12 +1.4 toff, ts and tf +20.6 -11.6 Voltages and resistor values shown are for IC = 10 mA. IC/IB = 10 and IB1 = IB2. Resistor values changed to obtain curves in Figures 11 and 12. Figure 13. Switching Time Test Circuit 4 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) VCC = -10 V VBB 0.1 F 100 -1.0 MEASUREMENT PROCEDURE C1 is increased until the toff time of the output waveform is decreased to 0.2 s, QS is then calculated by QS = C1 Vin. QS3 or QS7 by B-Line Electronics or equivalent may also be used. OUTPUT VOLTAGE WAVEFORMS 0 6.0 V Vout 6.0 V >5.0 s Vin tr, tf < 15 ns 10% toff Figure 14. Stored Base Charge Test Circuit Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS404A PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD Motorola Small-Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 5 MPS404A Motorola reserves the right to make changes without further notice to any products herein. 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