: ,.
.,!. .. ,,,,-,
., ,, ~./ ;/f:: ,, ,fi-;p.i ,,.,
,., .; .; .?“:\ 2N6040 thru 2N604-2PNP
@MOTOROLA 2N6043 thru 2N6045 ‘NPN ,
MJE6040thrti”MJE6042PNP
~~~
MJE6043thru MJE6045NR~
PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS
designed for general. purpose amplifier and .Iowspeed switching
applications. ,.
●High, DC Current Gain –
,.. hFE =2500 (Typ} @IC= 4.OAdc
●Collector-Emitter Sustaining Voltage’– @100 mAdc (1)
VCEO(~u$) =60 Vdc (Min) –2N6040, 2N6043 ,,,,
.: ‘= 80 Vdc (Min) –2N6041, 2N6044”..
=100 Vdc (Min) –2N6042, 2N6045
cLow Collector. Emitter Saturation Voltage –[1) ,.
VCE(~at) =2;0 Vdc (Max) @IC =4.0 Adc –2N6040,41,2N6043,44
.2.ovdc (Max} @IC =3.0 Adc –ZN6042, 2N6045 ,,
●Monolithic Construction with Bui,lt.in BaseEmitter $
,? ,*,
Shunt Resistors ,,~:,,.:.
!’. ,, ,- ,.
(1) Applies to corresponding in-house part numbers .1s0. *;<y, “
*MAXIMUM RATINGS. ,1...~~+’~,~,‘~-~
$:1
.t,,. i,
2N6040 2N604$I .$*t42
2N6043 2N6044? ‘,~\N6045
MJE6040 MJE6,~l tiJE6042
Rating Symbol MJE604~ mJE?Q44 MJE6045 Unit
Collector-Emitter Vollage VCEO 6%: ‘%&.80 100 Vdc
Collector.Base Voltage ‘CB ?*~~tJ ao 100 Vdc E
Emitter-Base Voltage VEB ?,!“s C’:. 5.0 —Vdc
Collector Current –Continuous 1~::++ ‘~
!$. \t~~ -~’ 8,0 —Adc
Peak ?h*. :+.:‘:4 16 —
Base Current ‘{$:,. I&i
..-*.h$-120~ mAdc
‘..
Tolal Power Dissipation @TC =25°C~e~~ ;~e2f~D 4 75 ‘— Watts
~,? ,,.’ —0.60 —Wloc
Tmal Power Dissipation @TA ~a~!.>’: pD -2.2 —Watts
Derate above 25°C :, .
‘$~, —0.0175 -w/Oc
Operating and Storage JK#”~.”yw” TJ ,Tstg _-65to +150 —Oc
Temperature Rang: 8+,;$
...
THERMAL cH@,@C~ERISTICS
‘!s?~haracteristi c
d,.“~i: Symbol Max Unit
Thermal Q:$$~d*Junction to Case OJC 1.67 Oclw
Therm4~.*&e, Junction to Ambient flJ~ 57 Oclw
+I~bte~~D EC Registered Data
t% $!
,,,,,<,$ 1,?,::...
*? *,1V&q,. FIGURE 1,- POWE,R DERATING
:?.. .“’+’?. TATc”
‘~4’ ~Y*:
..
:\$\ .., 4.0 80
:> ~\
\-’ ,,
g3.0 60 -
=<Tc
E
s\ \
~2.0 40 \
=
:
gTA1
=, 1,0 20
&O \
00 A.
o20 40 60 Bo 10D !20 140 !60
T,TEMPERATURE(°C)
,..”-v- .- . . ...” . .
There are two limitations on the power handling ability of a _
iransi~tor: “averagejunction temperature and second breakdown.
Safe operating area curves indicate IC –VCE limits of the tran-
sister that must be observed for reliable operation; i.e., the tr~”sistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5is based on T~(pk] =150°C; TC istiariable
deDendina on conditions. Second breakdown oulse Iiinit. ar. .al id
..-. .
for duty cycles to 10% provided Tti~kI <150°C. T11”1,1mav be
w“IF.. ,-\ F,.,
calculated from the data in Figure 4. At high case temperatures,
thermal’ limitations will re,duce the Power that can be handled to
values less than the Iimitations imoosed bv second breakdown.
