Test
Current
I
ZT
I
R
V
R
mA μAV
Min. Max. Typ. Max. Min. Max. Max.
BZD27C6V8P D7 6.4 7.2 1 3 0 0.07 100 10 3
BZD27C7V5P D8 7.0 7.9 1 2 0 0.07 100 50 3
BZD27C8V2P D9 7.7 8.7 1 2 0.03 0.08 100 10 3
BZD27C9V1P E0 8.5 9.6 2 4 0.03 0.08 50 10 5
BZD27C10P E1 9.4 10.6 2 4 0.05 0.09 50 7 7.5
BZD27C11P E2 10.4 11.6 4 7 0.05 0.10 50 4 8.2
BZD27C12P E3 11.4 12.7 4 7 0.05 0.10 50 3 9.1
BZD27C13P E4 12.4 14.1 5 10 0.05 0.10 50 2 10
BZD27C15P E5 13.8 15.6 5 10 0.05 0.10 25 1 11
BZD27C16P E6 15.3 17.1 6 15 0.06 0.11 25 1 12
BZD27C18P E7 16.8 19.1 6 15 0.06 0.11 25 1 13
BZD27C20P E8 18.8 21.2 6 15 0.06 0.11 25 1 15
BZD27C22P E9 20.8 23.3 6 15 0.06 0.11 25 1 16
BZD27C24P F0 22.8 25.6 7 15 0.06 0.11 25 1 18
BZD27C27P F1 25.1 28.9 7 15 0.06 0.11 25 1 20
BZD27C30P F2 28 32 8 15 0.06 0.11 25 1 22
BZD27C33P F3 31 35 8 15 0.06 0.11 25 1 24
BZD27C36P F4 34 38 21 40 0.06 0.11 10 1 27
BZD27C39P F5 37 41 21 40 0.06 0.11 10 1 30
BZD27C43P F6 40 46 24 45 0.07 0.12 10 1 33
BZD27C47P F7 44 50 24 45 0.07 0.12 10 1 36
BZD27C51P F8 48 54 25 60 0.07 0.12 10 1 39
BZD27C56P F9 52 56 25 60 0.07 0.12 10 1 43
BZD27C62P G0 58 66 25 80 0.08 0.13 10 1 47
BZD27C68P G1 64 72 25 80 0.08 0.13 10 1 51
BZD27C75P G2 70 79 30 100 0.08 0.13 10 1 56
BZD27C82P G3 77 82 60 200 0.08 0.13 10 1 62
BZD27C91P G4 85 91 60 200 0.08 0.13 5 1 68
BZD27C100P G5 94 106 60 200 0.09 0.13 5 1 75
BZD27C110P G6 104 116 80 250 0.09 0.13 5 1 82
BZD27C120P G7 114 127 150 300 0.09 0.13 5 1 91
BZD27C130P G 124 141 150 300 0.09 0.13 5 1 100
BZD27C150P G9 138 156 150 300 0.09 0.13 5 1 110
BZD27C160P H0 153 171 150 350 0.09 0.13 5 1 120
BZD27C180P H1 168 191 280 450 0.09 0.13 5 1 130
BZD27C200P H2 188 212 350 750 0.09 0.13 5 1 150
BZD27C220P H3 208 233 430 900 0.09 0.13 5 1 160
Notes: 1. Pulse test: tp ≦5ms.
Document Number: DS_D1405036 Version: V14
r
dif
@ I
Z
Device
Device
Marking
Code
Working Voltage
(Note 1)
V
Z
@ I
ZT
V
BZD27C SERIES
Taiwan Semiconductor
Reverse Current@
Reverse Voltage
ALPH
Z
@ I
Z
Ω
Temperature
Coefficient
%/℃
Differential
Resistance