Philips Semiconductors Product specification eee eee accceee cece cece eee cee ae Silicon diffused power transistor BUX100 ee ee ee ee eee eee ener eee ee creer ee een GENERAL DESCRIPTION High voitage, high speed glass passivated npn power transistor ina SOT82 envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL |PARAMETER CONDITIONS TYP. | MAX. | UNIT Voesm Collector-emitter voltage peak value Vee = OV - 600 Vv CEO Collector-emitter voltage (open base) - 300 Vv Io Collector current (DC) - 2 A low Collector current peak value - 3 A Prot Total power dissipation Tb S25 C - 60 WwW t Fall time Ie = 0.5 A; Iafon) = 100 MA 0.4 - us PINNING - SOT82 PIN CONFIGURATION SYMBOL PIN DESCRIPTION c D 1 |base 2 {collector b 3 femitter 1U2L) 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL |PARAMETER CONDITIONS MIN. | MAX. | UNIT Voesm Collector-emitter voltage peak value Vor =OV - 600 Vv CEO Collector-emitter voltage (open base) - 300 Vv le Collector current (DC) - 2 A lon Collector current peak value - 3 A la Base current (DC) - 0.75 A lon Base current peak value - 1.0 A -lom Reverse base current peak value - 1.0 A Pro Total power dissipation Tb S 25 C - 60 Ww Tag Storage temperature -65 150 Cc Tj Junction temperature - 150 C THERMAL RESISTANCES SYMBOL | PARAMETER CONDITIONS TYP. | MAX. |} UNIT Pip j mo Junction to mounting base - 2.1 KAV Rinja Junction to ambient in free air 100 - KAW ME 7110824 0077843 1TO July 1994 438 Rev 1.100Philips Semiconductors Silicon diffused power transistor Product specification BUX100 STATIC CHARACTERISTICS Tmo = 25 C unless otherwise specified SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Ices Collector cut-off current ' Vee = 0 V; Vee = Voesnmex - - 100 | pA CES Vac = 0 Vi Vee = Voesmmex: - - 2.0 mA T, = 125 C leeo Vero = 300 V . - 100 pA lego Emitter cut-off current Vep=7ViI,=0A - - 100 pA Voeosust Collector-emitter sustaining voltage ls =O0A; le = 100 mA; 300 : - Vv = 25m Vecsat Collector-emitter saturation voltage |1, =0.5 A; 1, = 100 mA - - 0.3 Vv Voesat Base-emitter saturation voltage Io = 0.5 A; 1g =0.1 A - - 1.2 Vv Nee DC current gain Ip =5 MA; Vop = 5 V 10 - - FE I, =0.3 A; Voge = 2 V 13 22 32.5 DYNAMIC CHARACTERISTICS Tn = 25 C unless otherwise specified SYMBOL |PARAMETER CONDITIONS TYP. | MAX. | UNIT Switching times (resistive load) |, = 0.5 A; Ip,, = 100 mA; lace = 100 MA; Veg = 125 V ton Turn-on time 0.5 |} 0.65 ys t, Turn-off storage time 3.9 6 ys t Turn-off fall time 0.4 0.5 ps IC/mA + 50 100-200R 250 Horizontal 2004 Oscilloscope @_ Vertical 100 300R 1R 0 a soon * voE/V m = VCEOsust Fig.1. Test circuit for Vecosust- Fig.2. Oscilloscope display for Vecosust- 1 Measured with half sine-wave voltage (curve tracer). ME 711082b 0077844 O37 July 1994 439 Rev 1.100Philips Semiconductors Product specification Silicon diffused power transistor BUX100 Normalised Power Fig.3. Test circuit resistive load. Vy = -6 to +8 V Voc = 250 V; tp = 20 1s; 8 = tp /T = 0.01. A, and RF, calculated from leg, ANd Igo, fequirements. 120 110 100 90 80 70 60 50 40 30 20 10 0 20 40 6&0 80, 100 1200-140 Tmb/ C Fig.6. Normalised power dissipation. PD% = 100-PD/PD o5- = f (Tr) fon 90% ST LO og og ic 10% tg. p~ fon ofl" \* iBon \. 10% t \ re dons \ J ABoff Fig.4. Switching times waveforms with resistive load. 2th/(K/W) 1E+01 5 1E+00 5 1E-01 4 1E-05 1E-02 1E-01 1E+01 t/s Fig.7. Transient thermal impedance. Zh pmb = {(); parameter D = t/T vec VCL -VBB TUT, | Fig.5. Test Circuit RBSOA. Voc = 150 V; -Vag = 5 V; Le = 2 MH: Vo, < 1500 V: lg=1THH VBEsat/V 2 1.7 0.9 0.8 0.6 0.5 0.4 0.3 0.2 0.07 0.1 IC/A 1 10 Fig.8. Typical base-emitter saturation voltage. Vocsat = (Ic); lo/le = 5 ME 7110826 0077845 T73 July 1994 Rev 1.100Philips Semiconductors Silicon diffused power transistor Product specification BUX100 VCEsat/V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 oO 0.01 0.7 1 10 IC/A Fig.9. Typical collector-emitter saturation voltage. Voesat = Flo); Io/lp = 5 Nee 1 0.01 0.7 1 10 1C/A Fig. 12. Typical DC current gain. Neg = fl); parameter Vor VBEsat/V 1.2 a] Tj=25C W=125C 7 09 0.8 0.7 C= 0.5A 0. A 0.6 0 0.2 0.4 0.6 0.8 1 IB/A Fig.10. Typical base-emitter saturation voltage. Vegsat = f(l,); parameter I, VCEsat/V 10 0.1 0.01 0.07 0.4 IB/A 1 10 Fig.11. Voesat = fle); parameter Ip Typical collector-emitter saturation voltage. IC/A 10 100 us ims 0.1 10 ms DC 0.01 1 10 100 1000 VCE/V Fig.13. Forward bias safe operating area. T,, = 25 C / Region of permissible DC operation. I Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30+ 5 newton force on the centre of the envelope. ME 7110826 007784b TOT July 1994 441 Rev 1.100Philips Semiconductors Product specification Silicon diffused power transistor BUX100 IC/A 3 2 7 oO oO 200 400 600 800 VCE /V Fig.14. Reverse bias safe operating area. T;< Timex M8 711082b 0077847? 64b Rev 1.100 July 1994 442Philips Semiconductors Product specification Silicon diffused power transistor BUX100 MECHANICAL DATA Dimensions in mm Net Mass: 0.8 g mounting p28 leg 7-8 5! eZ I] 3.75 | 3.1 |) CL | 25 | / { 11.1 | max | ~ 1.2 15.3 min | 0.5 i 1 | (2.28 | 0.88 1) Lead dimensions within this max zone uncontrolled. Fig.15. SOT82; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for SOT82 envelopes. ME 71108eb GO77848 7c mi July 1994 443 Rev 1.100