DSA 120 C 150 QB
Schottky Diode Gen ²
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
600
IA
V
F
0.93
R0.40 K/W
V
R
=
1 2 3
min.
60
t = 10 ms
Applications:
V
RRM
V
150
1.8
T
VJ
V°C=
T
VJ
°C=mA
5
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=150°C
d =
P
tot
375 WT
C
°C=
T
VJ
175 °C
-55
V
I
RRM
=
=150
60
60
T
VJ
=45°C
DSA 120 C 150 QB
V
A
150
V150
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions Unit
1.13
T
VJ
°C=25
C
J
j
unction capacitance V= V;24 T
125
V
F0
V
0.51
T
VJ
=175°C
r
F
3.9 Ω
f = 1 MHz = °C25
m
V
0.80
T
VJ
=°C
I
F
=A
V
60
1.03
I
F
=A120
I
F
=A120
2x
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
(50 Hz), sine
V
F
=0.80
V
● Housing:
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
TO-3P
●
rIndustry standard outline
●rcompatible with TO-247
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
RVJ
mA
481 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
FAV
average forward current
FAV
125
IXYS reserves the right to change limits, conditions and dimensions. 20100219a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
http://store.iiic.cc/
DSA 120 C 150 QB
I
RMS
A
per pin 70
R
thCH
K/W0.25
M
D
Nm1.2
mounting torque 0.8
T
stg
°C150
storage temperature -55
Weight g5
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
F
C
N120
mounting force with clip 20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
DSA 120 C 150 QB 501788Tube 30
Product Mar
k
i
n
g
Date Code
Part No.
Logo
Order Code
IXYS
abcd
D
S
A
120
C
150
QB
Part number
Diode
Schottky Diode
low VF
Common Cathode
TO-3P (3)
=
=
=
1)
1
)
Marking on Pr oduct
DSA120C150QB
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
RMS
IXYS reserves the right to change limits, conditions and dimensions. 20100219a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
http://store.iiic.cc/
DSA 120 C 150 QB
Outlines TO-3P
IXYS reserves the right to change limits, conditions and dimensions. 20100219a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
http://store.iiic.cc/
DSA 120 C 150 QB
0 50 100 150 200
0
20
40
60
80
0.0 0.2 0.4 0.6 0.8 1.0 1.2
20
40
60
80
100
120
0 50 100 150
0.001
0.01
0.1
1
10
100
10 30 50 700 204060
0
10
20
30
40
50
60
0.001 0.01 0.1 1 10
0.0
0.1
0.2
0.3
0.4
0.5
0 50 100 150
100
1000
10000
T
VJ
=175°C
150°C
125°C
100°C
25°C T
VJ
= 25°C
d =
DC
0.5
0.33
0.25
0.17
0.08
50°C
75°C
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
[V] V
R
[V]
C
T
[pF]
T
C
[°C] I
F(AV)
[A]
P
(AV)
[W]
Z
thJC
[K/W]
t [s]
Note: All curves are per diode
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Average forward current
I
F(AV)
vs. case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
I
F(AV)
[A]
T
VJ
=
150°C
125°C
25°C
R
thi
t
i
0.022 0.0002
0.082 0.0032
0.104 0.026
0.165 0.208
0.027 0.79
IXYS reserves the right to change limits, conditions and dimensions. 20100219a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
http://store.iiic.cc/
