PZT2222A
NPN General
Purpose Amplifier
Features
• Surface Mount SOT- 223 Package
• Capable of 350mWatts of Power Dissipation
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0) 40 Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10µAdc, IE=0) 75 Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10µAdc, IC=0) 6.0 Vdc
IBL
Base Cutoff Current
(VCE=60Vdc, VBE=3.0Vdc) 20 nAdc
ICEX
Collector Cutoff Current
(VCE=60Vdc, VBE=3.0Vdc) 10 nAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=0.1mAdc, VCE=10Vdc)
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=1.0Vdc)
(IC=500mAdc, VCE=10Vdc)
35
50
75
100 300
50
40
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc) 0.3
1.0 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc) 0.6 1.2
2.0 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=20mAdc, VCE=20Vdc, f=100MHz) 300 MHz
Cobo
Output Capacitance
(VCB=10Vdec, IE=0, f=1.0MHz) 8.0 pF
Cibo
Input Capacitance
(VBE=0.5Vdc, IC=0, f=1.0MHz) 25 pF
NF Noise Figure
(IC=100µAdc, VCE=10Vdc, RS=1.0kΩ
f=1.0kHz) 4.0 dB
SWITCHING CHARACTERISTICS
td Delay Time (VCC=30Vdc, VBE=0.5Vdc 10 ns
tr Rise Time IC=150mAdc, IB1=15mAdc) 25 ns
ts Storage Time (VCC=30Vdc, IC=150mAdc 225 ns
tf Fall Time IB1=IB2=15mAdc) 60 ns
*Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
DIMENSIONS
INCHES MM
DIM
MIN MAX MIN MAX NOTE
A 6.30 6.70 .248 .264
B 3.31 3.71 .130 .134
C 6.71 7.29 .264 .287
D 0.03 0.10 .001 .004
E 2.90 3.10 .114 .122
F 2.29 .090
G 1.55 1.80 .061 .071
H 0.23 0.33 .009 .013
J 0.82 --- .032 ---
SOT-223
www.mccsemi.com
Revision: 2 2003/04/30
omponents
20736 Marilla Street Chatsworth
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MCC
PZT2222A
DC Current Gain vs Collector Current
hFE
IC (mA)
80
160
240
320
400
480
0.1 110 100
Input and Output Capacitance vs
Reverse Bias Voltage
Volts - (V)
pF
2
4
6
8
10
12
0.1 1.0 10
COB
CIB
f = 1.0MHz
Maximum Power Dissipation vs
Ambient Temperature
PD(MAX) - (mW)
TA - (°C)
TO-92
SOT-23
0
200
400
600
800
050 100 150 200
VCE = 5.0V
Collector Current vs
Collector-Emitter Voltage
IC - (mA)
VCE - (V)
IB = 2mA
IB = 1mA
50
100
150
200
250
0.5 1.0 1.5 2.0
Collector Current vs
Collector-Emitter Voltage
IC - (mA)
VCE- (V)
35µA
30µA
0
2
4
6
8
10 20 30 40 50
25µA
20µA
15µA
10µA
5µA
IB = 3mA
IB = 4mA
Contours of Constant Gain
Bandwidth Product (fT)
VCE - (V)
IC - (mA)
0
4
8
12
16
20
24
0.1 1.0 10 100
*50MHz increments from 150
to 250MHz and 260MHz
MCC
www.mccsemi.com
Revision: 2 2003/04/30
PZT2222A
Collector Saturation Voltage vs
Collector Current
VCE(SAT) - (V)
IC - (mA)
.01
.06
.1
.6
1.0
1.4
0.1 1.0 10 100
TA = 125°C
TA = 25°C
IC/IB = 10
IC - (mA)
Collector Saturation Voltage vs
Collector Current
VCE(SAT) - (V)
TA = 25°C
0.1 1.0 10 100
.01
.06
.1
.6
1
4
Base Saturation Voltage vs
Collector Current
VBE(SAT) - (V)
0.1
0.6
1
6
10
14
1.0 10 100 1000
IC - (mA)
IC/IB = 10
Switching Times vs
Collector Current
T - (ns)
IC - (mA)
1.0
10
100
1000
1.0 10 100
IB1 = IB2 = IC/10
ts
t
f
t
r
td
Base Saturation Voltage vs
Collector Current
VBE(SAT) - (V)
.01
.06
.1
.6
1.0
1.4
1.0
10 100
1000
IC - (mA)
hfe=10
hfe=20
TA=25°C
TA=125°C
hfe=20
hfe=10
MCC
www.mccsemi.com
Revision: 2 2003/04/30
