July 2006 Rev 1 1/14
14
STD65NF06
STP65NF06
N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220
STripFET™ II Power MOSFET
General features
■Standard level gate drive
■100% avalanche tested
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”™
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
■Switching application
Internal schematic diagram
Type VDSS RDS(on) ID
STD65NF06 60V <14mΩ60A
STP65NF06 60V <14mΩ60A
DPAK
123
TO-220
1
3
www.st.com
Order codes
Part number Marking Package Packaging
STD65NF06 D65NF06 DPAK Tape & reel
STP65NF06 P65NF06 TO-220 Tube
Contents STD65NF06 - STP65NF06
2/14
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STD65NF06 - STP65NF06 Electrical ratings
3/14
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 60 V
VGS Gate- source voltage ± 20 V
IDDrain current (continuous) at TC = 25°C 60 A
IDDrain current (continuous) at TC = 100°C 42 A
IDM(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 240 A
Ptot Total dissipation at TC = 25°C 110 W
Derating Factor 0.73 W/°C
dv/dt (2)
2. ISD ≤ 60A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Peak diode recovery voltage slope 10 V/ns
EAS (3)
3. Starting Tj = 25 °C, ID = 30A, VDD = 40V
Single pulse avalanche energy 390 mJ
Tstg Storage temperature -55 to 175 °C
TjMax. operating junction temperature
Table 2. Thermal data
Symbol Parameter TO-220 DPAK Unit
Rthj-case Thermal resistance junction-case max 1.36 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 -- °C/W
Rthj-pcb(1)
1. When mounted on FR-4 of 1 inch², 2 oz Cu
Thermal resistance junction-pcb max -- 50 °C/W
TlMaximum lead temperature for soldering
purpose (for 10sec. 1.6mm from case)
300 -- °C/W
Electrical characteristics STD65NF06 - STP65NF06
4/14
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditio ns Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 250µA, VGS =0 60 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating,@125°C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 20V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 4 V
RDS(on)
Static drain-source on
resistance VGS = 10V, ID = 30A 11.5 14 mΩ
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance VDS= 25V, ID=30A 50 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
1700
400
135
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30V, ID = 30A
RG=4.7Ω VGS = 10V
(see Figure 12)
15
60
40
16
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 30V, ID = 60A,
VGS = 10V, RG=4.7Ω
(see Figure 13)
54
10
20
75 nC
nC
nC
STD65NF06 - STP65NF06 Electrical characteristics
5/14
Table 5. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
60
240
A
A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage ISD = 60A, VGS = 0 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 60A, di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see Figure 14)
70
150
4.4
ns
nC
A
Electrical characteristics STD65NF06 - STP65NF06
6/14
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Normalized breakdown voltage
temperature
Figure 6. Static drain-source on resistance
STD65NF06 - STP65NF06 Electrical characteristics
7/14
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
Test circuit STD65NF06 - STP65NF06
8/14
3 Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped Inductive load test
circuit
Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
STD65NF06 - STP65NF06 Package mechanical data
9/14
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
Package mechanical data STD65NF06 - STP65NF06
10/14
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
STD65NF06 - STP65NF06 Package mechanical data
11/14
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
b4 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
D1 5.1 0.200
E 6.4 6.6 0.252 0.260
E1 4.7 0.185
e 2.28 0.090
e1 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L 1 0.039
(L1) 2.8 0.110
L2 0.8 0.031
L4 0.6 1 0.023 0.039
R 0.2 0.008
V2 0° 8° 0° 8°
DPAK MECHANICAL DATA
0068772-F
Packing mechanical data STD65NF06 - STP65NF06
12/14
5 Packing mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0.795
G 16.4 18.4 0.645 0.724
N50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
STD65NF06 - STP65NF06 Revision history
13/14
6 Revision history
Table 6. Revision history
Date Revision Changes
24-Jul-2006 1First release
STD65NF06 - STP65NF06
14/14
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