© 2000 IXYS All rights reserved 1 - 2
VRSM V(BR)min
ÿ
①VRRM Anode Cathode
V V V on stud on stud
900 - 800 DS 75-08B DSI 75-08B
1300 - 1200 DS 75-12B DSI 75-12B
1300 1300 1200 DSA 75-12B DSAI 75-12B
1700 1760 1600 DSA 75-16B DSAI 75-16B
1900 1950 1800 DSA 75-18B DSAI 75-18B
① Only for Avalanche Diodes
Symbol Test Conditions Maximum Ratings
IF(RMS) TVJ = TVJM 160 A
IF(AV)M Tcase = 100°C; 180° sine 110 A
PRSM DSA(I) types, TVJ = TVJM, tp = 10 ms20kW
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1400 A
VR= 0 t = 8.3 ms (60 Hz), sine 1500 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1250 A
VR= 0 t = 8.3 ms (60 Hz), sine 1310 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 9800 A2s
VR= 0 t = 8.3 ms (60 Hz), sine 9450 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 7820 A2s
VR= 0 t = 8.3 ms (60 Hz), sine 7210 A2s
TVJ -40...+180 °C
TVJM 180 °C
Tstg -40...+180 °C
MdMounting torque 2.4-4.5 Nm
21-40 lb.in.
Weight 21 g
VRRM = 800-1800 V
IF(RMS) = 160 A
IF(AV)M = 110 A
Features
●International standard package,
JEDEC DO-203 AB (DO-5)
●Planar glassivated chips
Applications
●High power rectifiers
●Field supply for DC motors
●Power supplies
Advantages
●Space and weight savings
●Simple mounting
●Improved temperature and power
cycling
●Reduced protection circuits
Symbol Test Conditions Characteristic Values
IRTVJ = TVJM; VR = VRRM £6mA
VFIF= 150 A; TVJ = 25°C£1.17 V
VT0 For power-loss calculations only 0.75 V
rTTVJ = TVJM 2mW
RthJC DC current 0.5 K/W
RthJH DC current 0.9 K/W
dSCreepage distance on surface 4.05 mm
dAStrike distance through air 3.9 mm
aMax. allowable acceleration 100 m/s2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DS 75 DSI 75
DSA 75 DSAI 75
744
Rectifier Diode
A valanche Diode
A = Anode C = Cathode
DO-203 AB
1/4-28UNF
DS DSI
DSA DSAI
C
A
A
C
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© 2000 IXYS All rights reserved 2 - 2
DS 75 DSI 75
DSA 75 DSAI 75
23456789110
104
105
10-3 10-2 10-1 100
0
500
1000
1500
0.0 0.5 1.0 1.5
0
50
100
150
200
0 50 100 150 200
0
50
100
150
200
0 50 100 150 200
0
10-3 10-2 10-1 100101102103
0.0
0.5
1.0
1.5
I2t
IFSM
IF
A
VFtstms
PF
W
IF(AV)M
ATamb
°C
ts
ZthJH
K/W
A2s
0 40 80 120 160 200
0
50
100
150
200
IF(AV)M
Tc
A
V
A
°C
Fig. 6 Transient thermal impedance junction to heatsink
RthJH for various conduction angles d:
dR
thJH (K/W)
DC 0.900
180°1.028
120°1.085
60°1.272
30°1.476
Constants for ZthJH calculation:
iR
thi (K/W) ti (s)
1 0.0731 0.0015
2 0.1234 0.0237
3 0.4035 0.4838
4 0.3000 1.5
Fig. 1 Forward characteristics Fig. 2 Surge overload current
IFSM: crest value, t: duration Fig. 3 I2t versus time (1-10 ms)
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature
6
4
2
typ. lim.
TVJ= 180°C
TVJ= 25°C
TVJ = 180°C
TVJ = 45°C
50Hz, 80%VRRM
TVJ = 45°C
TVJ = 180°C
VR = 0 V
DC
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
RthJA :
1 K/W
1.2 K/W
1.6 K/W
2 K/W
3 K/W
4 K/W
30°
60°
120°
180°
DC
ase
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