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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. * Sourced from process 19. C C E E SOT-23 Mark:1P C SOT-223 B Figure 1. MMBT2222A Device Package B Figure 2. PZT2222A Device Package Ordering Information Part Number Top Mark Package Packing Method MMBT2222A 1P SOT-23 3L Tape and Reel PZT2222A 2222A SOT-223 4L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V Collector Current 1.0 A -55 to 150 C IC TSTG Parameter Operating and Storage Junction Temperature Range Note: 1. These rating are based on a maximum junction temperature of 150 C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operation. (c) 2004 Fairchild Semiconductor Corporation MMBT2222A / PZT2222A Rev. 1.1.0 www.fairchildsemi.com MMBT2222A / PZT2222A -- NPN General-Purpose Amplifier July 2014 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Max. Parameter Unit MMBT2222A(3) PZT2222A(4) Total Device Dissipation 350 1000 mW Derate Above 25C 2.8 8.0 mW/C Thermal Resistance, Junction to Ambient 357 125 C/W Notes: 3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. 4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2. (c) 2004 Fairchild Semiconductor Corporation MMBT2222A / PZT2222A Rev. 1.1.0 www.fairchildsemi.com 2 MMBT2222A / PZT2222A -- NPN General-Purpose Amplifier Thermal Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = 10 mA, IB = 0 40 V BV(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 75 V BV(BR)EBO 6.0 Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 ICEX Collector Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V ICBO Collector Cut-Off Current IEBO IBL V 10 VCB = 60 V, IE = 0 0.01 nA A VCB = 60 V, IE = 0, TA = 125C 10 Emitter Cut-Off Current VEB = 3.0 V, IC = 0 10 nA Base Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V 20 nA On Characteristics hFE DC Current Gain IC = 0.1 mA, VCE = 10 V 35 IC = 1.0 mA, VCE = 10 V 50 IC = 10 mA, VCE = 10 V 75 IC = 10 mA, VCE = 10 V, TA = -55C 35 IC = 150 mA, VCE = 10 V(5) 100 IC = 150 mA, VCE = 1 V(5) IC = 500 mA, VCE = 10 V(5) VCE(sat) Collector-Emitter Saturation Voltage(5) VBE(sat) Base-Emitter Saturation Voltage(5) 300 50 40 IC = 150 mA, IB = 15 mA 0.3 IC = 500 mA, IB = 50 mA 1.0 IC = 150 mA, IB = 15 mA 0.6 IC = 500 mA, IB = 50 mA 1.2 2.0 V V Small Signal Characteristics Current Gain Bandwidth Product IC = 20 mA, VCE = 20 V, f = 100 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 8.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 25 pF rb'Cc Collector Base Time Constant IC = 20 mA, VCB = 20 V, f = 31.8 MHz 150 pS Noise Figure IC = 100 A, VCE = 10 V, RS = 1.0 k, f = 1.0 kHz 4.0 dB Real Part of Common-Emitter High Frequency Input Impedance IC = 20 mA, VCE = 20 V, f = 300 MHz 60 VCC = 30 V, VEB(off) = 0.5 V, IC = 150 mA, IB1 = 15 mA 10 ns 25 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA 225 ns 60 ns fT NF Re(hie) 300 MHz Switching Characteristics td Delay Time tr Rise Time ts Storage Time tf Fall Time Note: 5. Pulse test: pulse width 300 s, duty cycle 2.0%. (c) 2004 Fairchild Semiconductor Corporation MMBT2222A / PZT2222A Rev. 1.1.0 www.fairchildsemi.com 3 MMBT2222A / PZT2222A -- NPN General-Purpose Amplifier Electrical Characteristics V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 0.4 500 V CE = 5V 400 125 C 300 25 C 25 qC 0.1 100 - 40 C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 V BE(ON) - BASE-EMITTER ON VOLTAGE (V) - 40 qC 0.8 25qC 125 qC 0.6 0.4 1 10 100 I ICC - COLLECTOR CURRENT (m A) 1 10 100 I C - COLLECTOR CURRENT (mA) 500 Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current E = 10 1 - 40qC 500 1 VCE = 5V 0.8 - 40 C 25 C 0.6 125 C 0.4 0.2 0.1 Figure 5. Base-Emitter Saturation Voltage vs. Collector Current 1 10 I ICC - COLLECTOR CURRENT (mA) 25 Figure 6. Base-Emitter On Voltage vs. Collector Current 500 V 100 CB 20 = 40V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) 125qC 0.2 200 Figure 3. Typical Pulsed Current Gain vs. Collector Current V BESAT- BASE-EMITTER VOLTAGE (V) E = 10 0.3 10 1 0.1 16 12 C te 8 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE (C) 150 0.1 C ob 1 10 REVERSE BIAS VOLTAGE (V) 100 Figure 8. Emitter Transition and Output Capacitance vs. Reverse Bias Voltage Figure 7. Collector Cut-Off Current vs. Ambient Temperature (c) 2004 Fairchild Semiconductor Corporation MMBT2222A / PZT2222A Rev. 1.1.0 f = 1 MHz www.fairchildsemi.com 4 MMBT2222A / PZT2222A -- NPN General-Purpose Amplifier Typical Performance Characteristics 400 400 I B1 = I B2 = 320 Ic V cc = 25 V TIME (nS) TIME (nS) 240 160 240 ts 160 tr t off 80 tf 80 t on td 100 I CIC - COLLECTOR CURRENT (mA) 0 10 1000 PD - POWER DISSIPATION (W) 1 SOT-223 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 2 h re CHAR. RELATIVE TO VALUES AT VCE= 10V CHAR. RELATIVE TO VALUES AT TA = 25oC V CE = 10 V I C = 10 mA h ie 1.6 h fe 1.2 h oe 0.8 0.4 0 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 Figure 13. Common Emitter Characteristics (c) 2004 Fairchild Semiconductor Corporation MMBT2222A / PZT2222A Rev. 1.1.0 1000 8 V CE = 10 V T A = 25oC 6 h oe 4 h re 2 h fe 0 h ie 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 Figure 12. Common Emitter Characteristics Figure 11. Power Dissipation vs. Ambient Temperature 2.4 100 I CIC - COLLECTOR CURRENT (mA) Figure 10. Switching Times vs. Collector Current CHAR. RELATIVE TO VALUES AT I C= 10mA Figure 9. Turn-On and Turn-Off Times vs. Collector Current 0.75 10 320 V cc = 25 V 0 10 Ic I B1 = I B2 = 10 1.3 I C = 10 mA T A = 25oC 1.25 1.2 h fe 1.15 h ie 1.1 1.05 1 h re 0.95 0.9 0.85 h oe 0.8 0.75 0 5 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 Figure 14. Common Emitter Characteristics www.fairchildsemi.com 5 MMBT2222A / PZT2222A -- NPN General-Purpose Amplifier Typical Performance Characteristics (Continued) MMBT2222A / PZT2222A -- NPN General-Purpose Amplifier Physical Dimensions 0.95 2.920.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.400.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor's online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf. (c) 2004 Fairchild Semiconductor Corporation MMBT2222A / PZT2222A Rev. 1.1.0 www.fairchildsemi.com 6 MMBT2222A / PZT2222A -- NPN General-Purpose Amplifier Physical Dimensions (Continued) Figure 16. MOLDED PACKAGING, SOT-223, 4-LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA04A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor's online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf. (c) 2004 Fairchild Semiconductor Corporation MMBT2222A / PZT2222A Rev. 1.1.0 www.fairchildsemi.com 7 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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